CAT93C86YI-GT3 datasheet, PDF - EEWORLD Datasheet

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CAT93C86YI-GT3: DescriptionHigh Speed Operation: 4 MHz (5 V), 2 MHz (1.8 V) Sequential Read; Categorystorage storage; File Size44KB，1 Pages; ManufacturerON Semiconductor; Websitehttp://www.onsemi.cn; Environmental Compliance

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CAT93C86YI-GT3 Overview

High Speed Operation: 4 MHz (5 V), 2 MHz (1.8 V) Sequential Read

CAT93C86YI-GT3 Parametric

Parameter Name	Attribute value
Is it lead-free?	Lead free
Is it Rohs certified?	conform to
Maker	ON Semiconductor
package instruction	TSSOP-8
Reach Compliance Code	compli
Is Samacsys	N
Spare memory width	8
Maximum clock frequency (fCLK)	2 MHz
JESD-30 code	R-PDSO-G8
JESD-609 code	e4
length	4.4 mm
memory density	16384 bi
Memory IC Type	EEPROM
memory width	16
Humidity sensitivity level	1
Number of functions	1
Number of terminals	8
word count	1024 words
character code	1000
Operating mode	SYNCHRONOUS
Maximum operating temperature	85 °C
Minimum operating temperature	-40 °C
organize	1KX16
Package body material	PLASTIC/EPOXY
encapsulated code	TSSOP
Package shape	RECTANGULAR
Package form	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH
Parallel/Serial	SERIAL
Peak Reflow Temperature (Celsius)	NOT SPECIFIED
Maximum seat height	1.2 mm
Serial bus type	MICROWIRE
Maximum supply voltage (Vsup)	5.5 V
Minimum supply voltage (Vsup)	1.8 V
Nominal supply voltage (Vsup)	5 V
surface mount	YES
technology	CMOS
Temperature level	INDUSTRIAL
Terminal surface	Nickel/Palladium/Gold (Ni/Pd/Au)
Terminal form	GULL WING
Terminal pitch	0.65 mm
Terminal location	DUAL
Maximum time at peak reflow temperature	NOT SPECIFIED
width	3 mm
Base Number Matches	1

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Product Overview

CAT93C86: 16 Kb Microwire Serial EEPROM Memory

For complete documentation, see the

data sheet

Product Description

The CAT93C86 is a 16 Kb Serial EEPROM memory device which is configured as either registers of 16 bits (ORG pin at V

) or 8

bits (ORG pin at GND). Each register can be written (or read) serially by using the DI (or DO) pin. The CAT93C86 features a self-

timed internal write with auto-clear. On-chip Power-On Reset circuit protects the internal logic against powering up in the wrong

state.

Features

•

High Speed Operation: 4 MHz (5 V), 2 MHz (1.8 V)

1.8 V (1.65 V) to 5.5 V Supply Voltage Range

Selectable x8 or x16 Memory Organization

Self-timed Write Cycle with Auto-clear

Sequential Read

Hardware and Software Write Protection

Power-up Inadvertent Write Protection

Low Power CMOS Technology

Program Enable (PE) Pin

1,000,000 Program/Erase Cycles

Part Electrical Specifications

Product

Compliance

Status

Type

Densit

Organi Data

zation Trans

missio

Stand

ard

2k x 8

Micro

Wire

Micro

Wire

Micro

Wire

Micro

Wire

Micro

Wire

Micro

Wire

Micro

Wire

Micro

Wire

cycle

Max

(kHz)

ACC

Max

Min

(V)

Max

(V)

standby

Max

(µA)

act

Max

(mA)

T Min

(°C)

T Max

(°C)

Packa

Type

CAT93C86HU4E-GT3

Pb-free

Halide free

ProductPrev Serial

iew

ProductPrev Serial

iew

Active

Serial

16 kb

2000

150

1.8

5.5

-40

125

UDFN-

PDIP-

SOIC-

TSSO

P-8

TSSO

P-8

CAT93C86HU4I-GT3

Pb-free

Halide free

16 kb

2k x 8

2000

150

1.8

5.5

-40

CAT93C86LI-G

Pb-free

Halide free

16 kb

2k x 8

2000

150

1.8

5.5

-40

CAT93C86VE-GT3

Pb-free

Halide free

ProductPrev Serial

iew

Active

Serial

16 kb

2k x 8

2000

150

1.8

5.5

-40

125

CAT93C86VI-G

Pb-free

Halide free

16 kb

2k x 8

2000

150

1.8

5.5

-40

CAT93C86VI-GT3

Pb-free

Halide free

Active

Serial

16 kb

2k x 8

2000

150

1.8

5.5

-40

CAT93C86YI-G

Pb-free

Halide free

ProductPrev Serial

iew

ProductPrev Serial

iew

16 kb

2k x 8

2000

150

1.8

5.5

-40

CAT93C86YI-GT3

Pb-free

Halide free

16 kb

2k x 8

2000

150

1.8

5.5

-40

For more information please contact your local sales support at www.onsemi.com

Created on: 6/13/2013

CAT93C86YI-GT3 Related Products

	CAT93C86YI-GT3	CAT93C86HU4E-GT3	CAT93C86HU4I-GT3	CAT93C86YI-G	CAT93C86_13	HFE22-B/48-H2T12-R
Description	High Speed Operation: 4 MHz (5 V), 2 MHz (1.8 V) Sequential Read	High Speed Operation: 4 MHz (5 V), 2 MHz (1.8 V) Sequential Read	High Speed Operation: 4 MHz (5 V), 2 MHz (1.8 V) Sequential Read	High Speed Operation: 4 MHz (5 V), 2 MHz (1.8 V) Sequential Read	High Speed Operation: 4 MHz (5 V), 2 MHz (1.8 V) Sequential Read	MINIATURE HIGH POWER LATCHING RELAY
Is it Rohs certified?	conform to	conform to	conform to	conform to	-	-
Maker	ON Semiconductor	ON Semiconductor	ON Semiconductor	ON Semiconductor	-	-
package instruction	TSSOP-8	UDFN-8	UDFN-8	TSSOP-8	-	-
Reach Compliance Code	compli	compli	compli	compli	-	-
Spare memory width	8	8	8	8	-	-
Maximum clock frequency (fCLK)	2 MHz	0.5 MHz	0.5 MHz	2 MHz	-	-
JESD-30 code	R-PDSO-G8	R-PDSO-N8	R-PDSO-N8	R-PDSO-G8	-	-
JESD-609 code	e4	e4	e4	e4	-	-
length	4.4 mm	3 mm	3 mm	4.4 mm	-	-
memory density	16384 bi	16384 bi	16384 bi	16384 bi	-	-
Memory IC Type	EEPROM	EEPROM	EEPROM	EEPROM	-	-
memory width	16	16	16	16	-	-
Humidity sensitivity level	1	1	1	1	-	-
Number of functions	1	1	1	1	-	-
Number of terminals	8	8	8	8	-	-
word count	1024 words	1024 words	1024 words	1024 words	-	-
character code	1000	1000	1000	1000	-	-
Operating mode	SYNCHRONOUS	SYNCHRONOUS	SYNCHRONOUS	SYNCHRONOUS	-	-
Maximum operating temperature	85 °C	125 °C	85 °C	85 °C	-	-
Minimum operating temperature	-40 °C	-40 °C	-40 °C	-40 °C	-	-
organize	1KX16	1KX16	1KX16	1KX16	-	-
Package body material	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	-	-
encapsulated code	TSSOP	HVSON	HVSON	TSSOP	-	-
Package shape	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	-	-
Package form	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	-	-
Parallel/Serial	SERIAL	SERIAL	SERIAL	SERIAL	-	-
Maximum seat height	1.2 mm	0.55 mm	0.55 mm	1.2 mm	-	-
Serial bus type	MICROWIRE	MICROWIRE	MICROWIRE	MICROWIRE	-	-
Maximum supply voltage (Vsup)	5.5 V	5.5 V	5.5 V	5.5 V	-	-
Minimum supply voltage (Vsup)	1.8 V	1.8 V	1.8 V	1.8 V	-	-
Nominal supply voltage (Vsup)	5 V	5 V	5 V	5 V	-	-
surface mount	YES	YES	YES	YES	-	-
technology	CMOS	CMOS	CMOS	CMOS	-	-
Temperature level	INDUSTRIAL	AUTOMOTIVE	INDUSTRIAL	INDUSTRIAL	-	-
Terminal surface	Nickel/Palladium/Gold (Ni/Pd/Au)	Nickel/Palladium/Gold (Ni/Pd/Au)	Nickel/Palladium/Gold (Ni/Pd/Au)	Nickel/Palladium/Gold (Ni/Pd/Au)	-	-
Terminal form	GULL WING	NO LEAD	NO LEAD	GULL WING	-	-
Terminal pitch	0.65 mm	0.5 mm	0.5 mm	0.65 mm	-	-
Terminal location	DUAL	DUAL	DUAL	DUAL	-	-
width	3 mm	2 mm	2 mm	3 mm	-	-

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