S1087_15 datasheet, PDF - EEWORLD Datasheet

Si photodiodes

S1087/S1133 series

Ceramic package photodiodes with low dark

current

The S1087/S1133 series are ceramic package photodiodes that offer low dark current. Ceramic package used is light-impervi-

ous, so no stray light can reach the photosensitive area from the side or backside. This allows reliable optical measurements

in the visible to near infrared range, over a wide dynamic range from low light levels to high light levels.

Features

S1087, S1133

: For visible range

S1087-01, S1133-01 : For visible to IR range

S1133-14

: For visible to near IR range

Applications

Exposure meters

Illuminometers

Copiers

Display light control

Optical switches

Structure /Absolute maximum ratings

Absolute maximum ratings

Type no.

Dimensional outline/

Window

material*

1

(1)/V

(2)/R

(3)/V

(4)/R

Photosensitive

area size

(mm)

S1087

S1087-01

S1133

S1133-01

S1133-14

1.3 × 1.3

10

2.4 × 2.8

-10 to +60*

2

-20 to +70*

2

Reverse

voltage

V

R

max

(V)

Operating temperature

Topr

(°C)

Storage

temperature

Tstg

(°C)

*1:

Window material R=resin coating, V=visual-compensation

ﬁ

lter

*2:

No condensation

Note: Exceeding the absolute maximum ratings even momentarily may cause a drop in product quality. Always be sure to use the

product within the absolute maximum ratings.

Electrical and optical characteristics (Typ. Ta=25 °C, unless otherwise noted)

Spectral

response

range

λ

(nm)

320 to 730

320 to 1100

320 to 730

320 to 1100

320 to 1000

Peak

sensitivity

wavelength

λp

(nm)

560

960

560

960

720

Shunt

Photosensitivity

Dark

Terminal

Short

Rise

Temp.

S

current

Infrared circuit

time capacitance resistance

coefﬁcient

Rsh

(A/W)

Ct

sensitivity current

I

D

tr

of

V

R

=10 mV

V

R

=0 V

Isc

ratio

V

R

=1 V T

CID

V

R

=0 V

GaP He-Ne

Isc

R

L

=1 kΩ f=10 kHz Min. Typ.

100

lx

max.

LED

laser

λp

(pA) (times/°C) (μs)

(pF)

(

G

Ω)

(

G

Ω)

560 nm 633 nm (%)

(μA) (%/°C)

0.3

0.19

10

0.16 -0.01

0.5

200

250

0.58

0.33

0.38

-

1.3

0.1

10

0.3

0.19

10

0.61 -0.01

1.12

10

2.5

700

100

0.58

0.38

-

5.4

0.33

0.1

0.4

0.37

-

3.1

20

0.5

200

50

Type no.

S1087

S1087-01

S1133

S1133-01

S1133-14

www.hamamatsu.com

1

Si photodiodes

S1087/S1133 series

Spectral response

Photosensitivity temperature characteristics

(S1087)

(Typ. Ta=25 °C)

S1087-01

S1133-01

+1.0

(Typ.)

0.7

0.6

Temperature coefficient (%/°C)

Photosensitivity (A/W)

+0.5

0.5

0.4

0.3

0.2

0.1

0

200

QE=100%

S1133-14

0

S1087

S1133

-0.5

400

600

800

1000

-1.0

200

400

600

800

1000

Wavelength (nm)

KSPDB0119EB

Wavelength (nm)

KSPDB0063EB

Rise time vs. load resistance

1 ms

(Typ. Ta=25 °C, V

R

=0 V)

Dark current vs. reverse voltage

1 nA

(Typ. Ta=25 °C)

100 μs

100 pA

S1133/-01

S1133-14

Rise time

10 μs

Dark current

S1087/-01, S1133-14

S1133/-01

10 pA

1 μs

1 pA

100 ns

100 fA

S1087/-01

10 ns

10

2

10

3

10

4

10

5

10 fA

0.01

0.1

1

10

Load resistance (Ω)

KSPDB0120EA

Reverse voltage (V)

KSPDB0121EA

2

Si photodiodes

S1087/S1133 series

Shunt resistance temperature characteristics

100 TΩ

Short circuit current linearity

10

0

10

-2

S1133-01

(Typ. Ta=25 °C, “A” light source fully illuminated)

(Typ. V

R

=10 mV)

10 TΩ

S1087/-01

Short circuit current (A)

10

-4

10

-6

10

-8

10

-10

10

-12

10

-14

S1133-14

S1087-01

Shunt resistance

1 TΩ

100 GΩ

S1133/-01

10 GΩ

S1133

1 GΩ

S1133-14

S1087

10

-6

10

-4

10

-2

10

0

10

2

10

4

10

6

10

8

100 MΩ

-20

0

20

40

60

70

10

-16

10

-8

Ambient temperature (°C)

KSPDB0122EA

Incident light level (lx)

KSPDB0123EA

Directivity

S1087, S1133

(Typ. Ta=25 °C, light source: tungsten lamp)

Y direction

20°

10° 0° 10°

20°

30°

S1087-01, S1133-01/-14

(Typ. Ta=25 °C, light source: tungsten lamp)

20°

10° 0° 10°

20°

30°

Y direction

X direction

70°

80°

40

20

0

20

40

60

90°

80 100

60°

Y direction

X direction

60

30°

40°

50°

60°

70°

80°

X direction

60

30°

40°

X direction

70°

80°

50°

60°

70°

80°

40°

50°

Y direction

40°

50°

60°

90°

100 80

40

20

0

20

40

60

90°

80 100

90°

100 80

Relative sensitivity (%)

KSPDB0342EA

Relative sensitivity (%)

KSPDB0343EA

3

Si photodiodes

S1087/S1133 series

Dimensional outlines (unit: mm)

(1) S1087

Cathode

Indicator hole

Photosensitive area

1.3

Filter

Photosensitive

surface

0.1

(2) S1087-01

Cathode

Indicator hole

Photosensitive area

1.3

+0

6.0

- 0.25

6.0

- 0.25

+0

5.0 ± 0.2

3.0 ± 0.2

12 ± 1.0

1.5 ± 0.2

Filter

1.5 ± 0.2

Photosensitive

surface

0.8

12 ± 1.0

ϕ0.45

Lead

ϕ0.45

Lead

3.0 ± 0.2

Tolerance unless otherwise noted: ±0.15

KSPDA0053EA

Tolerance unless otherwise noted: ±0.15

KSPDA0052EA

(3) S1133

Cathode

Indicator hole

8.0

- 0.25

Photosensitive area

2.8 × 2.4

+0

(4) S1133-01/-14

Cathode

Indicator hole

8.0

+0

-

0.25

Photosensitive area

2.8 × 2.4

0.8

Filter

1.5 ± 0.2

Photosensitive

surface

1.5 ± 0.2

5.0 ± 0.2

9 ± 1.0

S1133-01

A

Tolerance unless otherwise noted: ±0.15

KSPDA0055EA

Photosensitive

surface

0.2

Filter

6.0

- 0.3

0.7

9 ± 1.0

ϕ0.45

Lead

ϕ0.45

Lead

5.0 ± 0.2

A

6.0

+0.1

-0.3

+0.1

S1133-14

0.6

0.7

Tolerance unless otherwise noted: ±0.15

KSPDA0054EA

4

Si photodiodes

S1087/S1133 series

Related information

www.hamamatsu.com/sp/ssd/doc_en.html

Precautions

∙

Notice

∙

Metal, Ceramic, Plastic products / Precautions

Technical information

∙

Si photodiode / Application circuit examples

Information described in this material is current as of March, 2014.

Product specifications are subject to change without prior notice due to improvements or other reasons. This document has been carefully prepared and the

information contained is believed to be accurate. In rare cases, however, there may be inaccuracies such as text errors. Before using these products, always

contact us for the delivery specification sheet to check the latest specifications.

Type numbers of products listed in the delivery specification sheets or supplied as samples may have a suffix "(X)" which means preliminary specifications or

a suffix "(Z)" which means developmental specifications.

The product warranty is valid for one year after delivery and is limited to product repair or replacement for defects discovered and reported to us within that

one year period. However, even if within the warranty period we accept absolutely no liability for any loss caused by natural disasters or improper product

use.

Copying or reprinting the contents described in this material in whole or in part is prohibited without our prior permission.

www.hamamatsu.com

HAMAMATSU PHOTONICS K.K., Solid State Division

1126-1 Ichino-cho, Higashi-ku, Hamamatsu City, 435-8558 Japan, Telephone: (81) 53-434-3311, Fax: (81) 53-434-5184

U.S.A.: Hamamatsu Corporation: 360 Foothill Road, P.O.Box 6910, Bridgewater, N.J. 08807-0910, U.S.A., Telephone: (1) 908-231-0960, Fax: (1) 908-231-1218

Germany: Hamamatsu Photonics Deutschland GmbH: Arzbergerstr. 10, D-82211 Herrsching am Ammersee, Germany, Telephone: (49) 8152-375-0, Fax: (49) 8152-265-8

France: Hamamatsu Photonics France S.A.R.L.: 19, Rue du Saule Trapu, Parc du Moulin de Massy, 91882 Massy Cedex, France, Telephone: 33-(1) 69 53 71 00, Fax: 33-(1) 69 53 71 10

United Kingdom: Hamamatsu Photonics UK Limited: 2 Howard Court, 10 Tewin Road, Welwyn Garden City, Hertfordshire AL7 1BW, United Kingdom, Telephone: (44) 1707-294888, Fax: (44) 1707-325777

North Europe: Hamamatsu Photonics Norden AB: Thorshamnsgatan 35 16440 Kista, Sweden, Telephone: (46) 8-509-031-00, Fax: (46) 8-509-031-01

Italy: Hamamatsu Photonics Italia S.R.L.: Strada della Moia, 1 int. 6, 20020 Arese, (Milano), Italy, Telephone: (39) 02-935-81-733, Fax: (39) 02-935-81-741

China: Hamamatsu Photonics (China) Co., Ltd.: 1201 Tower B, Jiaming Center, No.27 Dongsanhuan Beilu, Chaoyang District, Beijing 100020, China, Telephone: (86) 10-6586-6006, Fax: (86) 10-6586-2866

Cat. No. KSPD1039E03 Mar. 2014 DN

5

S1087_15

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