UNISONIC TECHNOLOGIES CO., LTD
D4120P
Preliminary
NPN SILICON TRANSISTOR
MEDIUM VOLTAGE
FAST-SWITCHING NPN
TRANSISTOR
DESCRIPTION
The UTC
D4120P
is a medium voltage fast-switching NPN power
transistor. It is characterized by medium breakdown voltage, high
current capability, high switching speed and high reliability.
The UTC
D4120P
is intended to be used in energy-saving lights,
electronic ballasts, a power transform or a common power amplifier,
etc.
FEATURES
* Medium breakdown voltage
* High current capability
* High switching speed
* High reliability
* RoHS-compliant product
EQUIVALENT CIRCUIT
C (2)
B (1)
E (3)
ORDERING INFORMATION
Ordering Number
Lead Free
Halogen Free
D4120PL-T92-B
D4120PG-T92-B
D4120PL-T92-K
D4120PG-T92-K
D4120PL-T92-R
D4120PG-T92-R
Package
TO-92
TO-92
TO-92
Pin Assignment
1
2
3
B
C
E
B
C
E
B
C
E
Packing
Tape Box
Bulk
Tape Reel
www.unisonic.com.tw
Copyright © 2011 Unisonic Technologies Co., Ltd
1 of 2
QW-R201-084.a
D4120P
Preliminary
NPN SILICON TRANSISTOR
ABSOLUTE MAXIMUM RATINGS
(T
C
=25°C)
PARAMETER
SYMBOL
RATINGS
UNIT
Collector-Base Voltage
V
CBO
350
V
Collector-Emitter Voltage
V
CEO
200
V
Emitter-Base Voltage
V
EBO
7
V
Continuous Collector Current
I
C
1.5
A
Collector Power Dissipation
P
C
1
W
Junction Temperature
T
J
150
°C
Storage Temperature
T
STG
-55~150
°C
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
THERMAL DATA
PARAMETER
Junction to Ambient
SYMBOL
θ
JA
RATINGS
125
UNIT
°C/W
ELECTRICAL CHARACTERISTICS
(T
C
=25°C)
PARAMETER
Collector-Emitter Sustaining Voltage
Collector -Base Breakdown Voltage
Collector -Base Breakdown Voltage
Collector Cut-Off Current
Collect Emitter Cut-off Current
Emitter Cut-Off Current
Static Forward Current Transfer Ratio
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Fall Time
Storage Time
Input Resistance
SYMBOL
V
(BR)CEO
V
(BR)EBO
V
(BR)CBO
I
CBO
I
CEO
I
EBO
h
FE(1)
h
FE(2)
V
CE(sat) (1)
V
CE(sat) (2)
V
BE(sat)
t
f
T
stg
f
T
TEST CONDITIONS
I
C
=10mA, I
B
=0
I
C
=1mA, I
E
=0
I
C
=0, I
E
=1mA
V
CB
=300V, I
E
=0
V
CE
=200V, I
B
=0
V
EB
=7V, I
C
=0
I
C
=0.2A, V
CE
=5V
I
C
=1.5A, V
CE
=5V
I
C
=0.4A,I
B
=0.1A
I
C
=1A,I
B
=0.5A
I
C
=1A, I
B
=0.25A
V
CC
=24V, I
C
=0.5A,
I
B1
=-I
B2
=0.1A
V
CC
=24V, I
C
=0.5A,
I
B1
=-I
B2
=0.1A
V
CE
=10V, I
C
=0.5A,
MIN
200
350
7
TYP
MAX
UNIT
V
V
V
µA
µA
µA
8
5
100
50
10
50
0.5
2
1.5
0.5
4
V
V
V
µS
µS
MHz
4
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
2 of 2
VER.a
Microcontroller MCU
京公网安备 11010802033920号
EEWORLD
