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IRHLYS77034CM_15

Description
Simple Drive Requirements
File Size189KB,9 Pages
ManufacturerInternational Rectifier ( Infineon )
Websitehttp://www.irf.com/
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IRHLYS77034CM_15 Overview

Simple Drive Requirements

PRELIMINARY
PD-97291
RADIATION HARDENED
LOGIC LEVEL POWER MOSFET
THRU-HOLE (Low-Ohmic TO-257AA)
Product Summary
Part Number
IRHLYS77034CM
IRHLYS73034CM
Radiation Level
100K Rads (Si)
300K Rads (Si)
R
DS(on)
0.045Ω
0.045Ω
I
D
20A*
20A*
2N7607T3
IRHLYS77034CM
60V, N-CHANNEL
TECHNOLOGY
™
Low-Ohmic
TO-257AA
International Rectifier’s R7
TM
Logic Level Power
MOSFETs provide simple solution to interfacing
CMOS and TTL control circuits to power devices in
space and other radiation environments. The
threshold voltage remains within acceptable
operating limits over the full operating temperature
and post radiation. This is achieved while maintaining
single event gate rupture and single event burnout
immunity.
These devices are used in applications such as
current boost low signal source in PWM, voltage
comparator and operational amplifiers.
Features:
n
n
n
n
n
n
n
n
n
5V CMOS and TTL Compatible
Fast Switching
Single Event Effect (SEE) Hardened
Low Total Gate Charge
Simple Drive Requirements
Ease of Paralleling
Hermetically Sealed
Light Weight
Complimentary P-Channel Available -
IRHLYS797034CM
Absolute Maximum Ratings
Parameter
ID @ VGS = 4.5V, TC = 25°C
ID @ VGS = 4.5V, TC =100°C
IDM
PD @ TC = 25°C
VGS
EAS
IAR
EAR
dv/dt
TJ
T STG
Continuous Drain Current
Continuous Drain Current
Pulsed Drain Current
À
Max. Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy
Á
Avalanche Current
À
Repetitive Avalanche Energy
À
Peak Diode Recovery dv/dt
Â
Operating Junction
Storage Temperature Range
Lead Temperature
Weight
* Current is limited by package
For footnotes refer to the last page
20*
20*
80
75
0.6
±10
98
20
7.5
6.9
-55 to 150
Pre-Irradiation
Units
A
W
W/°C
V
mJ
A
mJ
V/ns
°C
300 (0.063in/1.6mm from case for 10s)
4.3 (Typical)
g
www.irf.com
03/01/11
1

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