PRELIMINARY
PD-97291
RADIATION HARDENED
LOGIC LEVEL POWER MOSFET
THRU-HOLE (Low-Ohmic TO-257AA)
Product Summary
Part Number
IRHLYS77034CM
IRHLYS73034CM
Radiation Level
100K Rads (Si)
300K Rads (Si)
R
DS(on)
0.045Ω
0.045Ω
I
D
20A*
20A*
2N7607T3
IRHLYS77034CM
60V, N-CHANNEL
TECHNOLOGY
Low-Ohmic
TO-257AA
International Rectifier’s R7
TM
Logic Level Power
MOSFETs provide simple solution to interfacing
CMOS and TTL control circuits to power devices in
space and other radiation environments. The
threshold voltage remains within acceptable
operating limits over the full operating temperature
and post radiation. This is achieved while maintaining
single event gate rupture and single event burnout
immunity.
These devices are used in applications such as
current boost low signal source in PWM, voltage
comparator and operational amplifiers.
Features:
n
n
n
n
n
n
n
n
n
5V CMOS and TTL Compatible
Fast Switching
Single Event Effect (SEE) Hardened
Low Total Gate Charge
Simple Drive Requirements
Ease of Paralleling
Hermetically Sealed
Light Weight
Complimentary P-Channel Available -
IRHLYS797034CM
Absolute Maximum Ratings
Parameter
ID @ VGS = 4.5V, TC = 25°C
ID @ VGS = 4.5V, TC =100°C
IDM
PD @ TC = 25°C
VGS
EAS
IAR
EAR
dv/dt
TJ
T STG
Continuous Drain Current
Continuous Drain Current
Pulsed Drain Current
À
Max. Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy
Á
Avalanche Current
À
Repetitive Avalanche Energy
À
Peak Diode Recovery dv/dt
Â
Operating Junction
Storage Temperature Range
Lead Temperature
Weight
* Current is limited by package
For footnotes refer to the last page
20*
20*
80
75
0.6
±10
98
20
7.5
6.9
-55 to 150
Pre-Irradiation
Units
A
W
W/°C
V
mJ
A
mJ
V/ns
°C
300 (0.063in/1.6mm from case for 10s)
4.3 (Typical)
g
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03/01/11
1
PRELIMINARY
IRHLYS77034CM, 2N7607T3
Pre-Irradiation
Electrical Characteristics
@ Tj = 25°C (Unless Otherwise Specified)
Parameter
BVDSS
Drain-to-Source Breakdown Voltage
∆BV
DSS /∆TJ Temperature Coefficient of Breakdown
Voltage
RDS(on)
Static Drain-to-Source On-State
Resistance
VGS(th)
Gate Threshold Voltage
∆V
GS(th)/∆TJ Gate Threshold Voltage Coefficient
gfs
Forward Transconductance
IDSS
Zero Gate Voltage Drain Current
Min
60
—
—
1.0
—
19
—
—
—
—
—
—
—
—
—
—
—
—
Typ Max Units
—
0.07
—
—
-5.0
—
—
—
—
—
—
—
—
—
—
—
—
6.8
—
—
0.045
2.0
—
—
1.0
10
100
-100
34
8.0
13
30
7.0
60
20
—
V
V/°C
Ω
V
mV/°C
S
µA
nA
Test Conditions
VGS = 0V, ID = 250µA
Reference to 25°C, ID = 1.0mA
VGS = 4.5V, ID = 20
Ã
VDS = VGS, ID = 250µA
VDS = 10V, IDS = 20A
Ã
VDS= 48V ,VGS = 0V
VDS = 48V,
VGS = 0V, TJ = 125°C
VGS = 10V
VGS = -10V
VGS = 4.5V, ID = 20A
VDS = 30V
VDD = 30V, ID = 20A,
VGS = 5.0V, RG = 7.5Ω
IGSS
IGSS
Qg
Q gs
Q gd
td
(on)
tr
td
(off)
tf
LS + LD
Gate-to-Source Leakage Forward
Gate-to-Source Leakage Reverse
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain (‘Miller’) Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Inductance
nC
ns
nH
Ciss
Coss
C rss
Rg
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
—
—
—
2025
484
5.1
1.16
—
—
—
pF
Ω
Measured from Drain lead
( 6mm / 0.025 in from package )
to Source lead ( 6mm/ 0.025 in
from package )
VGS = 0V, VDS = 25V
f = 1.0MHz
f = 1.0MHz, open drain
Source-Drain Diode Ratings and Characteristics
Parameter
IS
ISM
VSD
trr
Q RR
ton
Continuous Source Current (Body Diode)
Pulse Source Current (Body Diode)
À
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Forward Turn-On Time
Min Typ Max Units
—
—
—
—
—
—
—
—
—
—
20*
80
1.2
200
705
A
V
ns
nC
Test Conditions
T
j
= 25°C, IS = 20A, VGS = 0V
Ã
Tj = 25°C, IF = 20A, di/dt
≤
100A/µs
VDD
≤
25V
Ã
Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by LS + LD.
* Current is limited by package
Thermal Resistance
Parameter
RthJC
RthJA
Junction-to-Case
Junction-to-Ambient
Min Typ Max
—
—
—
—
1.67
80
Units
°C/W
Test Conditions
Typical Socket Mount
Note: Corresponding Spice and Saber models are available on International Rectifier Web site.
For footnotes refer to the last page
2
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PRELIMINARY
Radiation Characteristics
Pre-Irradiation
IRHLYS77034CM, 2N7607T3
International Rectifier Radiation Hardened MOSFETs are tested to verify their radiation hardness capability.
The hardness assurance program at International Rectifier is comprised of two radiation environments.
Every manufacturing lot is tested for total ionizing dose (per notes 5 and 6) using the TO-3 package. Both
pre- and post-irradiation performance are tested and specified using the same drive circuitry and test
conditions in order to provide a direct comparison.
Table 1. Electrical Characteristics @ Tj = 25°C, Post Total Dose Irradiation
ÄÅ
Parameter
BV
DSS
V
GS(th)
I
GSS
I
GSS
I
DSS
R
DS(on)
R
DS(on)
V
SD
Drain-to-Source Breakdown Voltage
Gate Threshold Voltage
Gate-to-Source Leakage Forward
Gate-to-Source Leakage Reverse
Zero Gate Voltage Drain Current
Static Drain-to-Source
On-State Resistance (TO-3)
Static Drain-to-Source On-state
Resistance (Low Ohmic TO-257)
Diode Forward Voltage
Up to 300K Rads (Si)
1
Min
60
1.0
—
—
—
—
—
—
Max
Units
V
nA
µA
Ω
Ω
V
Test Conditions
V
GS
= 0V, I
D
= 250µA
V
GS
= V
DS
, I
D
= 250µA
V
GS
= 10V
V
GS
= -10V
V
DS
= 48V, V
GS
=0V
V
GS
= 4.5V, I
D
= 20A
V
GS
= 4.5V, I
D
= 20A
V
GS
= 0V, I
D
= 20A
—
2.0
100
-100
10
0.045
0.045
1.2
1. Part numbers IRHLYS77034, IRHLYS73034
International Rectifier radiation hardened MOSFETs have been characterized in heavy ion environment for
Single Event Effects (SEE). Single Event Effects characterization is illustrated in Fig. a and Table 2.
Table 2. Typical Single Event Effect Safe Operating Area
Ion
LET
(MeV/(mg/cm ))
Kr
Xe
Au
37.3
63.3
90
2
Energy
(MeV)
400
435
1480
Range
(µm)
48.6
38.4
80.4
0V
60
60
60
-1V
60
60
-
-2V
60
60
-
-3V
60
60
-
VDS (V)
@VGS= @VGS= @VGS= @VGS= @VGS= @VGS= @VGS= @VGS=
-4V
60
60
-
-5V
60
-
-
-6V
60
-
-
-7V
35
-
-
70
60
50
40
30
20
10
0
0
-1
-2
-3
-4
-5
-6
-7
VGS
Kr
Xe
Au
Fig a.
Typical Single Event Effect, Safe Operating Area
For footnotes refer to the last page
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VDS
3
PRELIMINARY
IRHLYS77034CM, 2N7607T3
Pre-Irradiation
100
VGS
TOP
10V
5.0V
4.5V
4.0V
3.5V
3.0V
2.50V
BOTTOM 2.25V
100
VGS
10V
5.0V
4.5V
4.0V
3.5V
3.0V
2.50V
BOTTOM 2.25V
TOP
ID, Drain-to-Source Current (A)
10
ID, Drain-to-Source Current (A)
10
1
2.25V
60µs PULSE WIDTH
Tj = 25°C
0.1
1
10
100
2.25V
60µs PULSE WIDTH
Tj = 150°C
1
0.1
1
10
100
VDS , Drain-to-Source Voltage (V)
0.1
VDS, Drain-to-Source Voltage (V)
Fig 1.
Typical Output Characteristics
Fig 2.
Typical Output Characteristics
100
T J = 150°C
2.0
RDS(on) , Drain-to-Source On Resistance
(Normalized)
ID = 20A
1.5
ID, Drain-to-Source Current (A)
10
T J = 25°C
1
1.0
0.5
0.1
2
2.5
3
VDS = 25V
15
60µs PULSE WIDTH
3.5
4
4.5
5
VGS = 4.5V
0.0
-60 -40 -20
0
20
40
60
80 100 120 140 160
VGS, Gate-to-Source Voltage (V)
T J , Junction Temperature (°C)
Fig 3.
Typical Transfer Characteristics
Fig 4.
Normalized On-Resistance
Vs. Temperature
4
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PRELIMINARY
Pre-Irradiation
IRHLYS77034CM, 2N7607T3
RDS(on), Drain-to -Source On Resistance (mΩ)
90
80
70
60
50
40
30
20
10
0
2
4
6
8
ID = 20A
RDS(on), Drain-to -Source On Resistance ( mΩ)
100
100
90
80
70
60
50
40
30
20
10
0
10
20
30
40
50
60
70
80
ID, Drain Current (A)
Vgs = 4.5V
T J = 25°C
T J = 150°C
T J = 150°C
T J = 25°C
10
12
VGS, Gate -to -Source Voltage (V)
Fig 5.
Typical On-Resistance Vs
Gate Voltage
Fig 6.
Typical On-Resistance Vs
Drain Current
V(BR)DSS , Drain-to-Source Breakdown Voltage (V)
90
2.5
VGS(th) Gate threshold Voltage (V)
ID = 1.0mA
2.0
80
1.5
1.0
70
0.5
ID = 50µA
ID = 250µA
ID = 1.0mA
ID = 150mA
60
-60 -40 -20
0
20
40
60
80 100 120 140 160
0.0
-60 -40 -20
0
20
40
60
80 100 120 140 160
T J , Temperature ( °C )
T J , Temperature ( °C )
Fig 7.
Typical Drain-to-Source
Breakdown Voltage Vs Temperature
Fig 8.
Typical Threshold Voltage Vs
Temperature
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