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IRHM9230_15

Description
Simple Drive Requirements
File Size104KB,4 Pages
ManufacturerInternational Rectifier ( Infineon )
Websitehttp://www.irf.com/
Download Datasheet View All

IRHM9230_15 Overview

Simple Drive Requirements

Provisional Data Sheet No. PD-9.1395
REPETETIVE AVALANCHE AND dv/dt RATED
HEXFET
®
TRANSISTOR
IRHM9230
P-CHANNEL
RAD HARD
Product Summary
Part Number
IRHM9230
BV
DSS
-200V
R
DS(on)
0.8Ω
I
D
-6.5A
-200 Volt, 0.8Ω , RAD HARD HEXFET
International Rectifier’s P-Channel RAD HARD technology
HEXFETs demonstrate excellent threshold voltage stability
and breakdown voltage stability at total radiation doses as
high as 10
5
Rads (Si). Under
identical
pre- and post-radia-
tion test conditions, International Rectifier’s P-Channel RAD
HARD HEXFETs retain
identical
electrical specifications
up to 1 x 10
5
Rads (Si) total dose. No compensation in gate
drive circuitry is required. These devices are also capable
of surviving transient ionization pulses as high as 1 x 10
12
Rads (Si)/Sec, and return to normal operation within a few
microseconds. Single Event Effect (SEE) testing of Inter-
national Rectifier P-Channel RAD HARD HEXFETs has
demonstrated virtual immunity to SEE failure. Since the
P-Channel RAD HARD process utilizes International
Rectifier’s patented HEXFET technology, the user can ex-
pect the highest quality and reliability in the industry.
P-Channel RAD HARD HEXFET transistors also feature all
of the well-established advantages of MOSFETs, such as
voltage control,very fast switching, ease of paralleling and
temperature stability of the electrical parameters.
They are well-suited for applications such as switching
power supplies, motor controls, inverters, choppers, audio
amplifiers and high-energy pulse circuits in space and weap-
ons environments.
Features:
s
s
s
s
s
s
s
s
s
s
s
s
Radiation Hardened up to 1 x 10
5
Rads (Si)
Single Event Burnout (SEB) Hardened
Single Event Gate Rupture (SEGR) Hardened
Gamma Dot (Flash X-Ray) Hardened
Neutron Tolerant
Identical Pre- and Post-Electrical Test Conditions
Repetitive Avalanche Rating
Dynamic dv/dt Rating
Simple Drive Requirements
Ease of Paralleling
Hermetically Sealed
Ceramic Eyelets
s
Electrically Isolated
Absolute Maximum Ratings
Parameter
I D @ VGS = -12V, TC = 25°C Continuous Drain Current
ID @ VGS = -12V, TC = 100°C Continuous Drain Current
IDM
Pulsed Drain Current

PD @ TC = 25°C
VGS
EAS
I AR
EAR
dv/dt
TJ
TSTG
Max. Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy‚
Avalanche Current

Repetitive Avalanche Energy‚
Peak Diode Recovery dv/dt
ƒ
Operating Junction
Storage Temperature Range
Lead Temperature
Weight
Notes: See page 4
Pre-Radiation
IRHM9230
-6.5
-4.1
-26
75
0.2
±20
330
-6.5
7.5
-5.0
-55 to 150
o
C
Units
A
W
W/K
…
V
mJ
A
mJ
V/ns
300 (0.063 in. (1 .6mm) from case for 10s)
9.3 (typical)
g
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