PD-96973A
RADIATION HARDENED
IRHMB57Z60
POWER MOSFET
30V, N-CHANNEL
THRU-HOLE
(Tabless - Low-Ohmic TO-254AA)
5
TECHNOLOGY
Product Summary
Part Number Radiation Level
IRHMB57Z60 100K Rads (Si)
IRHMB53Z60 300K Rads (Si)
IRHMB54Z60 600K Rads (Si)
IRHMB58Z60 1000K Rads (Si)
R
DS(on)
0.0055Ω
0.0055Ω
0.0055Ω
0.0055Ω
I
D
45A*
45A*
45A*
45A*
Tabless
Low-Ohmic
TO-254AA
Features:
International Rectifier’s R5
TM
technology provides
high performance power MOSFETs for space
applications. These devices have been characterized
for Single Event Effects (SEE) with useful performance
up to an LET of 80 (MeV/(mg/cm
2
)). The combination
of low
RDS(on)
and low gate charge reduces the
power losses in switching applications such as DC
to DC converters and motor control. These devices
retain all of the well established advantages of
MOSFETs such as voltage control, fast switching,
ease of paralleling and temperature stability of
electrical parameters.
Low R
DS(on)
Fast Switching
Single Event Effect (SEE) Hardened
Low Total Gate Charge
Simple Drive Requirements
Ease of Paralleling
Hermetically Sealed
Ceramic Eyelets
Electrically Isolated
Light Weight
n
ESD Rating: Class 3B per MIL-STD-750,
Method 1020
n
n
n
n
n
n
n
n
n
n
Absolute Maximum Ratings
Parameter
ID @ VGS = 12V, TC = 25°C
ID @ VGS = 12V, TC = 100°C
IDM
PD @ TC = 25°C
VGS
EAS
IAR
EAR
dv/dt
TJ
T STG
Continuous Drain Current
Continuous Drain Current
Pulsed Drain Current
Max. Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Operating Junction
Storage Temperature Range
Lead Temperature
Weight
* Current is limited by package
For footnotes refer to the last page
45*
45*
180
208
1.67
±20
1250
45
20.8
1.08
-55 to 150
Pre-Irradiation
Units
A
W
W/°C
V
mJ
A
mJ
V/ns
°C
300 (0.063 in. /1.6 mm from case for 10s)
8.0 (Typical)
g
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1
06/04/15
IRHMB57Z60
Pre-Irradiation
Electrical Characteristics
@ Tj = 25°C (Unless Otherwise Specified)
Parameter
BVDSS
Drain-to-Source Breakdown Voltage
∆BV
DSS /∆T J Temperature Coefficient of Breakdown
Voltage
RDS(on)
Static Drain-to-Source On-State
Resistance
VGS(th)
Gate Threshold Voltage
g fs
Forward Transconductance
IDSS
Zero Gate Voltage Drain Current
Min
30
—
—
2.0
73
—
—
—
—
—
—
—
—
—
—
—
—
Typ Max Units
—
0.03
—
—
—
—
—
—
—
—
—
—
—
—
—
—
6.8
—
—
0.0055
4.0
—
10
25
100
-100
240
60
55
35
175
80
40
—
V
V/°C
Ω
V
S
µA
Test Conditions
VGS = 0V, ID = 1.0mA
Reference to 25°C, ID = 1.0mA
VGS = 12V, ID = 45A
VDS = VGS, ID = 1.0mA
VDS = 15V, IDS = 45A
VDS = 24V ,VGS = 0V
VDS = 24V,
VGS = 0V, TJ = 125°C
VGS = 20V
VGS = -20V
VGS =12V, ID = 45A
VDS = 15V
VDD = 15V, ID = 45A
VGS =12V, RG = 2.35Ω
IGSS
IGSS
Qg
Q gs
Q gd
td
(on)
tr
td
(off)
tf
LS + LD
Gate-to-Source Leakage Forward
Gate-to-Source Leakage Reverse
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain (‘Miller’) Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Inductance
nA
nC
ns
nH
Measured from Drain lead (6mm /0.25in.
from package) to Source lead (6mm /0.25in.
from package) with Source wires internally
bonded from Source Pin to Drain Pad
Ciss
Coss
Crss
Rg
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Internal Gate Resistance
—
—
—
—
8884
4334
270
0.73
—
—
—
—
pF
Ω
VGS = 0V, VDS = 25V
f = 1.0MHz
f = 1.0MHz, open drain
Source-Drain Diode Ratings and Characteristics
Parameter
IS
ISM
VSD
trr
Q RR
ton
Continuous Source Current (Body Diode)
Pulse Source Current (Body Diode)
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Forward Turn-On Time
Min Typ Max Units
—
—
—
—
—
—
—
—
—
—
45*
180
1.2
140
350
Test Conditions
A
V
ns
µC
T
j
= 25°C, IS = 45A, VGS = 0V
Tj = 25°C, IF = 45A, di/dt
≤
100A/µs
VDD
≤
25V
Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by LS + LD.
* Current is limited by package
Thermal Resistance
Parameter
RthJC
RthCS
RthJA
Junction-to-Case
Case-to-Sink
Junction-to-Ambient
Min Typ Max Units
—
—
—
— 0.60
0.21 —
—
48
°C/W
Test Conditions
Typical socket mount
Note: Corresponding Spice and Saber models are available on International Rectifier Web site.
For footnotes refer to the last page
2
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Radiation Characteristics
Pre-Irradiation
IRHMB57Z60
International Rectifier Radiation Hardened MOSFETs are tested to verify their radiation hardness capability.
The hardness assurance program at International Rectifier is comprised of two radiation environments.
Every manufacturing lot is tested for total ionizing dose (per notes 5 and 6) using the TO-3 package. Both
pre- and post-irradiation performance are tested and specified using the same drive circuitry and test
conditions in order to provide a direct comparison.
Table 1. Electrical Characteristics @ Tj = 25°C, Post Total Dose Irradiation
Parameter
BV
DSS
V
GS(th)
I
GSS
I
GSS
I
DSS
R
DS(on)
R
DS(on)
V
SD
Drain-to-Source Breakdown Voltage
Gate Threshold Voltage
Gate-to-Source Leakage Forward
Gate-to-Source Leakage Reverse
Zero Gate Voltage Drain Current
Static Drain-to-Source
On-State Resistance (TO-3)
Static Drain-to-Source On-State
Resistance (Low-Ohmic TO-254)
Diode Forward Voltage
Up to 600K Rads(Si)
1
1000K Rads (Si)
2
Units
Min
Max
Min
Max
30
2.0
—
—
—
—
—
—
—
4.0
100
-100
10
0.0040
0.0055
1.2
30
1.5
—
—
—
—
—
—
—
4.0
100
-100
25
0.0045
0.0060
1.2
V
nA
µA
Ω
Ω
V
Test Conditions
V
GS
= 0V, I
D
= 1.0mA
V
GS
= V
DS
, I
D
= 1.0mA
V
GS
= 20V
V
GS
= -20 V
V
DS
= 24V, V
GS
= 0V
V
GS
=12V, I
D
= 45A
V
GS
=12V, I
D
= 45A
V
GS
= 0V, IS = 45A
1. Part numbers IRHMB57Z60, IRHMB53Z60 and IRHMB54Z60
2. Part number IRHMB58Z60
International Rectifier radiation hardened MOSFETs have been characterized in heavy ion environment for
Single Event Effects (SEE). Single Event Effects characterization is illustrated in Fig. a and Table 2.
Table 2. Typical Single Event Effect Safe Operating Area
LET
(MeV/(mg/cm ))
38 ± 5%
61 ± 5%
84 ± 5%
2
Energy
(MeV)
300 ± 7.5%
330 ± 7.5%
350 ± 10%
Range
(µm)
38 ± 7.5%
31 ± 10%
28 ± 7.5%
@VGS =
@VGS =
VDS (V)
@VGS =
@VGS =
@VGS =
0V
30
25
25
-5V
30
25
25
-10V
30
20
20
-15V
22.5
15
-
-20V
15
7.5
-
35
30
25
20
15
10
5
0
0
-5
-10
Bias VGS (V)
-15
-20
Bias VDS (V)
LET=38 ± 5%
LET=61 ± 5%
LET=84 ± 5%
Fig a.
Typical Single Event Effect, Safe Operating Area
For footnotes refer to the last page
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3
IRHMB57Z60
Pre-Irradiation
1000
VGS
TOP
15V
12V
10V
8.0V
6.0V
5.0V
4.5V
BOTTOM 4.0V
1000
ID, Drain-to-Source Current (A)
100
ID, Drain-to-Source Current (A)
100
VGS
15V
12V
10V
8.0V
6.0V
5.0V
4.5V
BOTTOM 4.0V
TOP
10
4.0V
10
1
4.0V
60µs PULSE WIDTH
Tj = 25°C
60µs PULSE WIDTH
Tj = 150°C
1
0.1
1
10
100
0.1
0.1
1
10
100
VDS, Drain-to-Source Voltage (V)
VDS , Drain-to-Source Voltage (V)
Fig 1.
Typical Output Characteristics
Fig 2.
Typical Output Characteristics
1000
2.0
RDS(on) , Drain-to-Source On Resistance
(Normalized)
ID = 45A
1.5
ID, Drain-to-Source Current (A)
100
T J = 150°C
T J = 25°C
10
1.0
0.5
1
4
4.5
VDS = 15V
15
60µs PULSE WIDTH
5
5.5
6
VGS = 12V
0.0
-60 -40 -20
0
20
40
60
80 100 120 140 160
VGS, Gate-to-Source Voltage (V)
T J , Junction Temperature (°C)
Fig 3.
Typical Transfer Characteristics
Fig 4.
Normalized On-Resistance
Vs. Temperature
4
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Pre-Irradiation
IRHMB57Z60
16000
14000
12000
VGS, Gate-to-Source Voltage (V)
100KHz
VGS = 0V,
f = 1 MHz
C iss = C gs + C gd, C ds SHORTED
C rss = C gd
C oss = C ds + C gd
20
ID = 45A
16
VDS = 24V
VDS = 15V
C, Capacitance (pF)
10000
8000
6000
4000
2000
0
1
Ciss
Coss
12
8
4
FOR TEST CIRCUIT
SEE FIGURE 13
0
0
40
80
120 160 200 240 280 320
Crss
10
100
VDS, Drain-to-Source Voltage (V)
QG, Total Gate Charge (nC)
Fig 5.
Typical Capacitance Vs.
Drain-to-Source Voltage
Fig 6.
Typical Gate Charge Vs.
Gate-to-Source Voltage
1000
1000
OPERATION IN THIS AREA
LIMITED BY R DS(on)
100
100µs
ISD, Reverse Drain Current (A)
100
TJ = 150°C
10
T J = 25°C
ID, Drain-to-Source Current (A)
1ms
10
Tc = 25°C
Tj = 150°C
Single Pulse
0.1
1
10
10ms
1
VGS = 0V
0.1
0.0
0.4
0.8
1.2
1.6
VSD , Source-to-Drain Voltage (V)
DC
1
100
VDS , Drain-to-Source Voltage (V)
Fig 7.
Typical Source-Drain Diode
Forward Voltage
Fig 8.
Maximum Safe Operating Area
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