PD-94667F
RADIATION HARDENED
POWER MOSFET
THRU-HOLE (Low-Ohmic TO-254AA)
Product Summary
Part Number Radiation Level
IRHMS67260 100K Rads (Si)
IRHMS63260
300K Rads (Si)
R
DS(on)
0.029Ω
0.029Ω
I
D
45A*
45A*
2N7584T1
IRHMS67260
200V, N-CHANNEL
TECHNOLOGY
Low-Ohmic
TO-254AA
International Rectifier’s R6
TM
technology provides
superior power MOSFETs for space applications.
These devices have improved immunity to Single
Event Effect (SEE) and have been characterized for
useful performance with Linear Energy Transfer
(LET) up to 90MeV/(mg/cm
2
). Their combination of
very low
RDS(on)
and faster switching times reduces
power loss and increases power density in today’s
high speed switching applications such as DC-DC
converters and motor controllers. These devices
retain all of the well established advantages of
MOSFETs such as voltage control, ease of paralleling
and temperature stability of electrical parameters.
Features:
n
Low R
DS(on)
n
Fast Switching
n
Single Event Effect (SEE) Hardened
n
Low Total Gate Charge
n
Simple Drive Requirements
n
Ease of Paralleling
n
Hermetically Sealed
n
Ceramic Eyelets
n
Electrically Isolated
n
Light Weight
n
ESD Rating: Class 3A per MIL-STD-750, Method 1020
Absolute Maximum Ratings
Parameter
ID @ VGS = 12V, TC = 25°C Continuous Drain Current
ID @ VGS = 12V, TC = 100°C Continuous Drain Current
IDM
Pulsed Drain Current
À
PD @ TC = 25°C
VGS
EAS
IAR
EAR
dv/dt
TJ
T STG
Max. Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy
Á
Avalanche Current
À
Repetitive Avalanche Energy
À
Peak Diode Recovery dv/dt
Â
Operating Junction
Storage Temperature Range
Lead Temperature
Weight
* Current is limited by package
For footnotes refer to the last page
45*
35
180
208
1.67
±20
344
45
20.8
5.4
-55 to 150
Pre-Irradiation
Units
A
W
W/°C
V
mJ
A
mJ
V/ns
°C
300 (0.063 in. /1.6 mm from case for 10s)
9.3 (Typical)
g
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1
04/01/14
IRHMS67260, 2N7584T1
Pre-Irradiation
Min
200
—
—
2.0
—
40
—
—
—
—
—
—
—
—
—
—
—
—
Electrical Characteristics
@ Tj = 25°C (Unless Otherwise Specified)
Parameter
BVDSS
Drain-to-Source Breakdown Voltage
∆BV
DSS /∆T J Temperature Coefficient of Breakdown
Voltage
RDS(on)
Static Drain-to-Source On-State
Resistance
VGS(th)
Gate Threshold Voltage
∆V
GS(th)/∆TJ Gate Threshold Voltage Coefficient
gfs
Forward Transconductance
IDSS
Zero Gate Voltage Drain Current
Typ Max Units
—
0.21
—
—
-11.2
—
—
—
—
—
—
—
—
—
—
—
—
6.8
—
—
0.029
4.0
—
—
10
25
100
-100
240
65
60
40
60
70
30
—
V
V/°C
Ω
V
mV/°C
S
µA
nA
Test Conditions
VGS = 0V, ID = 1.0mA
Reference to 25°C, ID = 1.0mA
VGS = 12V, ID = 35A
Ã
VDS = VGS, ID = 1.0mA
VDS = 25V, IDS = 35A
Ã
VDS= 160V, VGS = 0V
VDS = 160V,
VGS = 0V, TJ = 125°C
VGS = 20V
VGS = -20V
VGS = 12V, ID = 45A
VDS = 100V
VDD = 100V, ID = 45A,
V GS = 12V, RG = 2.35Ω
IGSS
IGSS
Qg
Q gs
Q gd
td
(on)
tr
td
(off)
tf
LS + LD
Gate-to-Source Leakage Forward
Gate-to-Source Leakage Reverse
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain (‘Miller’) Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Inductance
nC
ns
nH
Ciss
C oss
C rss
Rg
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
—
—
—
8045
953
14
1.1
—
—
—
pF
Ω
Measured from Drain lead
( 6mm / 0.025 in from package )
to Source lead ( 6mm/ 0.025 in
from package )
VGS = 0V, VDS = 25V
f = 1.0MHz
f = 1.0MHz, open drain
Source-Drain Diode Ratings and Characteristics
Parameter
IS
ISM
VSD
trr
Q RR
ton
Continuous Source Current (Body Diode)
Pulse Source Current (Body Diode)
À
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Forward Turn-On Time
Min Typ Max Units
—
—
—
—
—
—
—
—
—
—
45*
180
1.2
640
10.5
Test Conditions
A
V
ns
µC
T
j
= 25°C, IS = 45A, VGS = 0V
Ã
Tj = 25°C, IF = 45A, di/dt
≤
100A/µs
VDD
≤
25V
Ã
Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by LS + LD.
* Current is limited by package
Thermal Resistance
Parameter
RthJC
RthCS
RthJA
Junction-to-Case
Case-to-Sink
Junction-to-Ambient
Min Typ Max Units
—
—
—
— 0.60
0.21 —
—
48
°C/W
Test Conditions
Typical socket mount
Note: Corresponding Spice and Saber models are available on International Rectifier Web site.
For footnotes refer to the last page
2
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Radiation Characteristics
Pre-Irradiation
IRHMS67260, 2N7584T1
International Rectifier Radiation Hardened MOSFETs are tested to verify their radiation hardness capability.
The hardness assurance program at International Rectifier is comprised of two radiation environments.
Every manufacturing lot is tested for total ionizing dose (per notes 5 and 6) using the TO-3 package. Both
pre- and post-irradiation performance are tested and specified using the same drive circuitry and test
conditions in order to provide a direct comparison.
Table 1. Electrical Characteristics @ Tj = 25°C, Post Total Dose Irradiation
ÄÅ
Parameter
BV
DSS
V
GS(th)
I
GSS
I
GSS
I
DSS
R
DS(on)
R
DS(on)
V
SD
Drain-to-Source Breakdown Voltage
Gate Threshold Voltage
Gate-to-Source Leakage Forward
Gate-to-Source Leakage Reverse
Zero Gate Voltage Drain Current
Static Drain-to-Source
On-State Resistance (TO-3)
Static Drain-to-Sourcee On-State
Resistance (Low Ohmic TO-254AA)
Diode Forward Voltage
Up to 300K Rads (Si)
1
Min
200
2.0
—
—
—
—
—
—
Max
Units
V
nA
µA
Ω
Ω
V
Test Conditions
V
GS
= 0V, I
D
= 1.0mA
V
GS
= V
DS
, I
D
= 1.0mA
V
GS
= 20V
V
GS
= -20V
V
DS
= 160V, V
GS
= 0V
V
GS
= 12V, I
D
= 35A
V
GS
= 12V, I
D
= 35A
V
GS
= 0V, I
D
= 45A
—
4.0
100
-100
10
0.029
0.029
1.2
1. Part numbers IRHMS67260 and IRHMS63260
International Rectifier radiation hardened MOSFETs have been characterized in heavy ion environment for
Single Event Effects (SEE). Single Event Effects characterization is illustrated in Fig. a and Table 2.
Table 2. Typical Single Event Effect Safe Operating Area
LET
(MeV/(mg/cm ))
42 ± 5%
61 ± 5%
90 ± 5%
2
Energy
(MeV)
2450 ± 5%
825 ± 5%
1470 ± 5%
Range
(µm)
205 ± 5%
66 ± 7.5%
80 ± 5%
@VGS=
@VGS=
VDS (V)
@VGS=
@VGS=
0V
200
200
170
-5V
200
200
170
-10V
200
200
-
-15V
190
190
-
250
Bias VDS (V)
200
150
100
50
0
0
-5
-10
-15
Bias VGS (V)
LET=42 ± 5%
LET=61 ± 5%
LET=90 ± 5%
Fig a.
Typical Single Event Effect, Safe Operating Area
For footnotes refer to the last page
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IRHMS67260, 2N7584T1
Pre-Irradiation
1000
VGS
TOP
15V
12V
10V
9.0V
8.0V
7.0V
6.0V
BOTTOM 5.0V
1000
V
GS
15V
12V
10V
9.0V
8.0V
7.0V
6.0V
BOTTOM 5.0V
TOP
ID, Drain-to-Source Current (A)
100
ID, Drain-to-Source Current (A)
100
5.0V
10
10
5.0V
60µs PULSE WIDTH
Tj = 25°C
1
0.1
1
10
100
VDS , Drain-to-Source Voltage (V)
60µs PULSE WIDTH
Tj = 150°C
1
0.1
1
10
100
VDS , Drain-to-Source Voltage (V)
Fig 1.
Typical Output Characteristics
Fig 2.
Typical Output Characteristics
1000
2.5
R
DS(on)
, Drain-to-Source On Resistance
(Normalized)
I
D
= 45A
ID, Drain-to-Source Current (
Α)
2.0
T J = 150°C
100
T J = 25°C
1.5
1.0
0.5
10
5
5.5
6
VDS = 50V
15
60µs PULSE WIDTH
6.5
7
7.5
8
0.0
-60 -40 -20
V
GS
= 12V
0
20
40
60
80 100 120 140 160
VGS , Gate-to-Source Voltage (V)
T
J
, Junction Temperature (
°
C)
Fig 3.
Typical Transfer Characteristics
Fig 4.
Normalized On-Resistance
Vs. Temperature
4
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Pre-Irradiation
IRHMS67260, 2N7584T1
RDS(on), Drain-to -Source On Resistance (m
Ω)
90
80
70
60
50
40
30
20
10
0
4
8
12
ID = 45A
RDS(on), Drain-to -Source On Resistance (m
Ω)
100
80
70
60
50
40
30
20
10
0
0
20 40 60 80 100 120 140 160 180 200
ID, Drain Current (A)
T J = 25°C
VGS = 12V
T J = 150°C
T J = 150°C
T J = 25°C
16
20
VGS, Gate -to -Source Voltage (V)
Fig 5.
Typical On-Resistance Vs
Gate Voltage
Fig 6.
Typical On-Resistance Vs
Drain Current
V(BR)DSS , Drain-to-Source Breakdown Voltage (V)
250
5.0
240
VGS(th) Gate threshold Voltage (V)
ID = 1.0mA
4.5
4.0
3.5
3.0
2.5
2.0
1.5
1.0
230
220
210
200
ID = 50µA
ID = 250µA
ID = 1.0mA
ID = 150mA
-60 -40 -20
0
20
40
60
80 100 120 140 160
190
-60 -40 -20
0
20
40
60
80 100 120 140 160
T J , Temperature ( °C )
T J , Temperature ( °C )
Fig 7.
Typical Drain-to-Source
Breakdown Voltage Vs Temperature
Fig 8.
Typical Threshold Voltage Vs
Temperature
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