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CXE-2089ZPCK-410

Description
50 MHz - 1000 MHz RF/MICROWAVE WIDE BAND MEDIUM POWER AMPLIFIER
CategoryTopical application    Wireless rf/communication   
File Size641KB,10 Pages
ManufacturerRF Micro Devices (Qorvo)
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CXE-2089ZPCK-410 Overview

50 MHz - 1000 MHz RF/MICROWAVE WIDE BAND MEDIUM POWER AMPLIFIER

CXE-2089ZPCK-410 Parametric

Parameter NameAttribute value
Maximum input power10 dBm
Number of terminals3
Minimum operating frequency50 MHz
Maximum operating frequency1000 MHz
Minimum operating temperature-40 Cel
Maximum operating temperature85 Cel
Processing package descriptionROHS COMPLIANT, SOT-89
each_compliYes
EU RoHS regulationsYes
stateActive
Microwave RF TypeWIDE BAND MEDIUM POWER
Impedance characteristics50 ohm
structureCOMPONENT
Gain20 dB
Number of functions1
Packaging MaterialsPLASTIC/EPOXY
ckage_equivalence_codeTO-243
wer_supplies__v_7
sub_categoryRF/Microwave Amplifiers
CraftsmanshipGAAS
terminal coatingNOT SPECIFIED
CXE-2089Z
LINEAR GENERAL PURPOSE AMPLIFIER
Package: SOT-89
Features
50MHz to 1000MHz
Operation
Internally Matched Input and
Output
20dB Small Signal Gain
1.5dB Noise Figure
+24dBm Output Power
Single 5V to 9V Positive
Power Supply
CATV Distribution Amplifiers
Cable Modems
Broadband Gain Blocks
Laser Diode Driver
Return Channel Amplifier
Base Stations
Functional Block Diagram
Applications
Product Description
The CXE-2089Z is a general purpose, low-cost, high-linearity RF amplifier
IC. The device is manufactured on a Gallium Arsenide process and is fea-
tured in a small SOT-89 package. It has been designed for use as an easily
cascadable 75 gain block with a noise figure of less than 2dB. Gain flat-
ness better than 0.5dB from 50MHz to 1000MHz, and high linearity make
this part ideal for cable TV applications. Other applications include IF and
RF amplification in wireless voice and data communication products oper-
ating in the 50MHz to 1000MHz frequency range. The device is self-con-
tained with 75 input and output impedances providing less than 2:1
VSWR matching. For higher input and output return losses, see the evalu-
ation schematic.
Optimum Technology Matching® Applied
GaAs HBT
GaAs MESFET
InGaP HBT
SiGe BiCMOS
Si BiCMOS
SiGe HBT
GaAs pHEMT
Si CMOS
Si BJT
GaN HEMT
BiFET HBT
LDMOS
RF MICRO DEVICES®, RFMD®, Optimum Technology Matching®, Enabling Wireless Connectivity™, PowerStar®, POLARIS™ TOTAL RADIO™ and UltimateBlue™ are trademarks of RFMD, LLC. BLUETOOTH is a trade-
mark owned by Bluetooth SIG, Inc., U.S.A. and licensed for use by RFMD. All other trade names, trademarks and registered trademarks are the property of their respective owners. ©2006, RF Micro Devices, Inc.
DS110930
7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical
support, contact RFMD at (+1) 336-678-5570 or customerservice@rfmd.com.
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Description 50 MHz - 1000 MHz RF/MICROWAVE WIDE BAND MEDIUM POWER AMPLIFIER 50 MHz - 1000 MHz RF/MICROWAVE WIDE BAND MEDIUM POWER AMPLIFIER 50 MHz - 1000 MHz RF/MICROWAVE WIDE BAND MEDIUM POWER AMPLIFIER Wide Band Medium Power Amplifier, 50MHz Min, 1000MHz Max, 1 Func, GAAS, ROHS COMPLIANT, SOT-89 Wide Band Medium Power Amplifier, 50MHz Min, 1000MHz Max, 1 Func, GAAS, ROHS COMPLIANT, SOT-89 MINIATURE HIGH POWER LATCHING RELAY Wide Band Medium Power Amplifier, 50MHz Min, 1000MHz Max, 1 Func, GAAS, ROHS COMPLIANT, SOT-89
Number of terminals 3 3 3 3 3 - 3
Minimum operating frequency 50 MHz 50 MHz 50 MHz 50 MHz 50 MHz - 50 MHz
Maximum operating frequency 1000 MHz 1000 MHz 1000 MHz 1000 MHz 1000 MHz - 1000 MHz
Minimum operating temperature -40 Cel -40 Cel -40 Cel -40 °C -40 °C - -40 °C
Maximum operating temperature 85 Cel 85 Cel 85 Cel 85 °C 85 °C - 85 °C
structure COMPONENT COMPONENT COMPONENT COMPONENT COMPONENT - COMPONENT
Gain 20 dB 20 dB 20 dB 20 dB 20 dB - 20 dB
Number of functions 1 1 1 1 1 - 1
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