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CXE-2089ZSQ

Description
Wide Band Medium Power Amplifier, 50MHz Min, 1000MHz Max, 1 Func, GAAS, ROHS COMPLIANT, SOT-89
CategoryWireless rf/communication    Radio frequency and microwave   
File Size641KB,10 Pages
ManufacturerRF Micro Devices (Qorvo)
Environmental Compliance  
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CXE-2089ZSQ Overview

Wide Band Medium Power Amplifier, 50MHz Min, 1000MHz Max, 1 Func, GAAS, ROHS COMPLIANT, SOT-89

CXE-2089ZSQ Parametric

Parameter NameAttribute value
Is it lead-free?Lead free
Is it Rohs certified?conform to
Objectid2105819688
package instructionTO-243
Reach Compliance Codecompliant
ECCN code5A991.G
Characteristic impedance50 Ω
structureCOMPONENT
Gain20 dB
Maximum input power (CW)10 dBm
JESD-609 codee3
Installation featuresSURFACE MOUNT
Number of functions1
Number of terminals3
Maximum operating frequency1000 MHz
Minimum operating frequency50 MHz
Maximum operating temperature85 °C
Minimum operating temperature-40 °C
Package body materialPLASTIC/EPOXY
Encapsulate equivalent codeTO-243
power supply7 V
RF/Microwave Device TypesWIDE BAND MEDIUM POWER
surface mountYES
technologyGAAS
Terminal surfaceMatte Tin (Sn)
CXE-2089Z
LINEAR GENERAL PURPOSE AMPLIFIER
Package: SOT-89
Features
50MHz to 1000MHz
Operation
Internally Matched Input and
Output
20dB Small Signal Gain
1.5dB Noise Figure
+24dBm Output Power
Single 5V to 9V Positive
Power Supply
CATV Distribution Amplifiers
Cable Modems
Broadband Gain Blocks
Laser Diode Driver
Return Channel Amplifier
Base Stations
Functional Block Diagram
Applications
Product Description
The CXE-2089Z is a general purpose, low-cost, high-linearity RF amplifier
IC. The device is manufactured on a Gallium Arsenide process and is fea-
tured in a small SOT-89 package. It has been designed for use as an easily
cascadable 75 gain block with a noise figure of less than 2dB. Gain flat-
ness better than 0.5dB from 50MHz to 1000MHz, and high linearity make
this part ideal for cable TV applications. Other applications include IF and
RF amplification in wireless voice and data communication products oper-
ating in the 50MHz to 1000MHz frequency range. The device is self-con-
tained with 75 input and output impedances providing less than 2:1
VSWR matching. For higher input and output return losses, see the evalu-
ation schematic.
Optimum Technology Matching® Applied
GaAs HBT
GaAs MESFET
InGaP HBT
SiGe BiCMOS
Si BiCMOS
SiGe HBT
GaAs pHEMT
Si CMOS
Si BJT
GaN HEMT
BiFET HBT
LDMOS
RF MICRO DEVICES®, RFMD®, Optimum Technology Matching®, Enabling Wireless Connectivity™, PowerStar®, POLARIS™ TOTAL RADIO™ and UltimateBlue™ are trademarks of RFMD, LLC. BLUETOOTH is a trade-
mark owned by Bluetooth SIG, Inc., U.S.A. and licensed for use by RFMD. All other trade names, trademarks and registered trademarks are the property of their respective owners. ©2006, RF Micro Devices, Inc.
DS110930
7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical
support, contact RFMD at (+1) 336-678-5570 or customerservice@rfmd.com.
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CXE-2089ZSQ Related Products

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Description Wide Band Medium Power Amplifier, 50MHz Min, 1000MHz Max, 1 Func, GAAS, ROHS COMPLIANT, SOT-89 50 MHz - 1000 MHz RF/MICROWAVE WIDE BAND MEDIUM POWER AMPLIFIER 50 MHz - 1000 MHz RF/MICROWAVE WIDE BAND MEDIUM POWER AMPLIFIER 50 MHz - 1000 MHz RF/MICROWAVE WIDE BAND MEDIUM POWER AMPLIFIER Wide Band Medium Power Amplifier, 50MHz Min, 1000MHz Max, 1 Func, GAAS, ROHS COMPLIANT, SOT-89 MINIATURE HIGH POWER LATCHING RELAY Wide Band Medium Power Amplifier, 50MHz Min, 1000MHz Max, 1 Func, GAAS, ROHS COMPLIANT, SOT-89
structure COMPONENT COMPONENT COMPONENT COMPONENT COMPONENT - COMPONENT
Gain 20 dB 20 dB 20 dB 20 dB 20 dB - 20 dB
Number of functions 1 1 1 1 1 - 1
Number of terminals 3 3 3 3 3 - 3
Maximum operating frequency 1000 MHz 1000 MHz 1000 MHz 1000 MHz 1000 MHz - 1000 MHz
Minimum operating frequency 50 MHz 50 MHz 50 MHz 50 MHz 50 MHz - 50 MHz
Maximum operating temperature 85 °C 85 Cel 85 Cel 85 Cel 85 °C - 85 °C
Minimum operating temperature -40 °C -40 Cel -40 Cel -40 Cel -40 °C - -40 °C

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