DMN5L06K
N-CHANNEL ENHANCEMENT MODE MOSFET
Product Summary
V
(BR)DSS
R
DS(ON)
2.0Ω @ V
GS
= 5.0V
I
D
T
A
= +25°C
300 mA
200 mA
Features and Benefits
Low On-Resistance
Very Low Gate Threshold Voltage (1.0V max)
Low Input Capacitance
Fast Switching Speed
Low Input/Output Leakage
ESD Protected Up To 2kV
Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
Qualified to AEC-Q101 standards for High Reliability
ADVANCE INFORMATION
50V
2.5Ω @ V
GS
= 2.5V
Description and Applications
This new generation 50V N-Channel Enhancement Mode MOSFET
has been designed to minimize RDS(on) and yet maintain superior
switching performance. This device is ideal for use in Notebook
battery power management and Load switch.
Load switches
Level switches
Mechanical Data
Case: SOT23
Case Material: Molded Plastic, “Green” Molding Compound.
UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminals: Finish – Matte Tin annealed over Alloy 42 leadframe.
Solderable per MIL-STD-202, Method 208
Terminal Connections: See Diagram
Weight: 0.008 grams (approximate)
Drain
SOT23
Gate
D
Gate
Protection
Diode
Source
G
S
ESD PROTECTED TO 2kV
Top View
Equivalent Circuit
Top View
Ordering Information
(Note 4)
Part Number
DMN5L06K-7
DMN5L06KQ-7
Notes:
Qualification
Commercial
Automotive
Case
SOT23
SOT23
Packaging
3000/Tape & Reel
3000/Tape & Reel
1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds
4. For packaging details, go to our website at http://www.diodes.com/products/packages.html.
Marking Information
DAB = Product Type Marking Code
YM = Date Code Marking
Y = Year (ex: T = 2006)
M = Month (ex: 9 = September)
DAB
Date Code Key
Year
2006
Code
T
Month
Code
Jan
1
2007
U
Feb
2
2008
V
Mar
3
2009
W
Apr
4
2010
X
May
5
YM
2011
Y
Jun
6
2012
Z
Jul
7
2013
A
Aug
8
2014
B
Sep
9
2015
C
Oct
O
2016
D
Nov
N
2017
E
Dec
D
March 2014
DMN5L06K
Document number: DS30929 Rev. 8 - 2
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DMN5L06K
Maximum Ratings
(@T
A
= +25°C, unless otherwise specified.)
Characteristic
Drain Source Voltage
Gate-Source Voltage
Drain Current (Note 5)
Symbol
V
DSS
V
GSS
Continuous
Pulsed (Note 6)
I
D
Value
50
20
300
800
Unit
V
V
mA
ADVANCE INFORMATION
Thermal Characteristics
Characteristic
Total Power Dissipation (Note 5)
Thermal Resistance, Junction to Ambient
Operating and Storage Temperature Range
Symbol
P
D
R
θJA
T
J
, T
STG
Value
350
357
-65 to +150
Unit
mW
C/W
C
Electrical Characteristics
(@T
A
= +25°C, unless otherwise specified.)
Characteristic
OFF CHARACTERISTICS (Note 7)
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Body Leakage
ON CHARACTERISTICS (Note 7)
Gate Threshold Voltage
Static Drain-Source On-Resistance
On-State Drain Current
Forward Transconductance
Source-Drain Diode Forward Voltage
DYNAMIC CHARACTERISTICS
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Notes:
5. Device mounted on FR-4 PCB
6. Pulse width
10mS,
Duty Cycle
1%.
7. Short duration pulse test used to minimize self-heating effect.
Symbol
BV
DSS
I
DSS
I
GSS
Min
50
Typ
Max
60
1
500
50
1.0
3.0
2.5
2.0
1.4
50
25
5.0
Unit
V
nA
μA
nA
nA
V
Ω
A
mS
V
pF
pF
pF
Test Condition
V
GS
= 0V, I
D
= 10μA
V
DS
= 50V, V
GS
= 0V
V
GS
= ±12V, V
DS
= 0V
V
GS
= ±10V, V
DS
= 0V
V
GS
= ±5V, V
DS
= 0V
V
DS
= V
GS
, I
D
= 250μA
V
GS
= 1.8V, I
D
= 50mA
V
GS
= 2.5V, I
D
= 50mA
V
GS
= 5.0V, I
D
= 50mA
V
GS
= 10V, V
DS
= 7.5V
V
DS
=10V, I
D
= 0.2A
V
GS
= 0V, I
S
= 115mA
V
DS
= 25V, V
GS
= 0V
f = 1.0MHz
@ T
C
= +25°C
V
GS(th)
R
DS(ON)
I
D(ON)
|Y
fs
|
V
SD
C
iss
C
oss
C
rss
0.49
0.5
200
0.5
1.4
DMN5L06K
Document number: DS30929 Rev. 8 - 2
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DMN5L06K
ADVANCE INFORMATION
V
DS
, DRAIN-SOURCE VOLTAGE (V)
Fig. 1 Typical Output Characteristics
10
V
GS
, GATE-SOURCE VOLTAGE (V)
Fig. 2 Typical Transfer Characteristics
R
DS(on)
, STATIC DRAIN-SOURCE
ON-RESISTANCE (
)
75 100 125 150
-25
25
50
0
T
ch
, CHANNEL TEMPERATURE (°C)
Fig. 3 Gate Threshold Voltage vs. Channel Temperature
0
-50
1
0
I
D,
DRAIN CURRENT (A)
Fig. 4 Static Drain-Source On-Resistance vs. Drain Current
10
R
DS(on)
, STATIC DRAIN-SOURCE
ON-RESISTANCE (
)
1
I
D
, DRAIN CURRENT (A)
Fig. 5 Static Drain-Source On-Resistance vs. Drain Current
R
DS(on)
, STATIC DRAIN-SOURCE
ON-RESISTANCE (
)
V
GS,
GATE SOURCE VOLTAGE (V)
Fig. 6 Static Drain-Source On-Resistance
vs. Gate-Source Voltage
DMN5L06K
Document number: DS30929 Rev. 8 - 2
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DMN5L06K
ADVANCE INFORMATION
T
A
, AMBIENT TEMPERATURE (
°
C)
Fig. 7
Static Drain-Source On-State Resistance
vs. Ambient Temperature
|Y
fs
|, FORWARD TRANSFER ADMITTANCE (S)
1
I
D
, DRAIN CURRENT (A)
Fig.10 Forward Transfer Admittance vs. Drain Current
I
DR
, REVERSE DRAIN CURRENT (A)
I
DR
, REVERSE DRAIN CURRENT (A)
R
DS(on)
, STATIC DRAIN-SOURCE
ON-RESISTANCE (
)
400
60
C
T
, JUNCTION CAPACITANCE (pF)
350
P
D
, POWER DISSIPATION (mW)
300
250
200
150
100
50
0
0
100
50
T
A
, AMBIENT TEMPERATURE (
°
C)
Fig. 11 Derating Curve - Total
150
50
40
C
iss
30
20
10
f = 1MHz
C
oss
C
rss
0
0
5
10
15
20
25
V
DS
, DRAIN-SOURCE VOLTAGE (V)
Figure 12 Typical Junction Capacitance
30
DMN5L06K
Document number: DS30929 Rev. 8 - 2
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DMN5L06K
Package Outline Dimensions
Please see AP02002 at http://www.diodes.com/datasheets/ap02002.pdf for latest version.
A
ADVANCE INFORMATION
B C
H
K
J
F
D
G
L
K1
M
SOT23
Dim
Min
Max
Typ
A
0.37
0.51
0.40
B
1.20
1.40
1.30
C
2.30
2.50
2.40
D
0.89
1.03 0.915
F
0.45
0.60 0.535
G
1.78
2.05
1.83
H
2.80
3.00
2.90
J
0.013 0.10
0.05
K
0.903 1.10
1.00
K1
-
-
0.400
L
0.45
0.61
0.55
M
0.085 0.18
0.11
0°
8°
-
All Dimensions in mm
Suggested Pad Layout
Please see AP02001 at http://www.diodes.com/datasheets/ap02001.pdf for the latest version.
Y
Z
C
Dimensions Value (in mm)
Z
2.9
X
0.8
Y
0.9
C
2.0
E
1.35
X
E
DMN5L06K
Document number: DS30929 Rev. 8 - 2
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March 2014
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