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DMN5L06KQ-7

Description
300 mA, 50 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET
Categorysemiconductor    Discrete semiconductor   
File Size251KB,6 Pages
ManufacturerDiodes
Websitehttp://www.diodes.com/
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DMN5L06KQ-7 Overview

300 mA, 50 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET

DMN5L06KQ-7 Parametric

Parameter NameAttribute value
Minimum breakdown voltage50 V
Number of terminals3
Processing package descriptionGREEN, PLASTIC PACKAGE-3
each_compliYes
EU RoHS regulationsYes
stateActive
structureSINGLE WITH BUILT-IN DIODE
Maximum leakage current0.3000 A
Maximum drain on-resistance3 ohm
feedback capacitor5 pF
field effect transistor technologyMETAL-OXIDE SEMICONDUCTOR
jesd_30_codeR-PDSO-G3
jesd_609_codee3
moisture_sensitivity_level1
Number of components1
operating modeENHANCEMENT MODE
Packaging MaterialsPLASTIC/EPOXY
packaging shapeRECTANGULAR
Package SizeSMALL OUTLINE
eak_reflow_temperature__cel_260
larity_channel_typeN-CHANNEL
surface mountYES
terminal coatingMATTE TIN
Terminal formGULL WING
Terminal locationDUAL
ime_peak_reflow_temperature_max__s_40
transistor applicationsSWITCHING
Transistor component materialsSILICON
dditional_featureESD PROTECTION, HIGH RELIABILITY, LOW THRESHOLD
DMN5L06K
N-CHANNEL ENHANCEMENT MODE MOSFET
Product Summary
V
(BR)DSS
R
DS(ON)
2.0Ω @ V
GS
= 5.0V
I
D
T
A
= +25°C
300 mA
200 mA
Features and Benefits
Low On-Resistance
Very Low Gate Threshold Voltage (1.0V max)
Low Input Capacitance
Fast Switching Speed
Low Input/Output Leakage
ESD Protected Up To 2kV
Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
Qualified to AEC-Q101 standards for High Reliability
ADVANCE INFORMATION
50V
2.5Ω @ V
GS
= 2.5V
Description and Applications
This new generation 50V N-Channel Enhancement Mode MOSFET
has been designed to minimize RDS(on) and yet maintain superior
switching performance. This device is ideal for use in Notebook
battery power management and Load switch.
Load switches
Level switches
Mechanical Data
Case: SOT23
Case Material: Molded Plastic, “Green” Molding Compound.
UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminals: Finish – Matte Tin annealed over Alloy 42 leadframe.
Solderable per MIL-STD-202, Method 208
Terminal Connections: See Diagram
Weight: 0.008 grams (approximate)
Drain
SOT23
Gate
D
Gate
Protection
Diode
Source
G
S
ESD PROTECTED TO 2kV
Top View
Equivalent Circuit
Top View
Ordering Information
(Note 4)
Part Number
DMN5L06K-7
DMN5L06KQ-7
Notes:
Qualification
Commercial
Automotive
Case
SOT23
SOT23
Packaging
3000/Tape & Reel
3000/Tape & Reel
1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds
4. For packaging details, go to our website at http://www.diodes.com/products/packages.html.
Marking Information
DAB = Product Type Marking Code
YM = Date Code Marking
Y = Year (ex: T = 2006)
M = Month (ex: 9 = September)
DAB
Date Code Key
Year
2006
Code
T
Month
Code
Jan
1
2007
U
Feb
2
2008
V
Mar
3
2009
W
Apr
4
2010
X
May
5
YM
2011
Y
Jun
6
2012
Z
Jul
7
2013
A
Aug
8
2014
B
Sep
9
2015
C
Oct
O
2016
D
Nov
N
2017
E
Dec
D
March 2014
DMN5L06K
Document number: DS30929 Rev. 8 - 2
1 of 6
www.diodes.com
© Diodes Incorporated

DMN5L06KQ-7 Related Products

DMN5L06KQ-7 DMN5L06K_15
Description 300 mA, 50 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET 300 mA, 50 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET
Minimum breakdown voltage 50 V 50 V
Number of terminals 3 3
Processing package description GREEN, PLASTIC PACKAGE-3 GREEN, PLASTIC PACKAGE-3
each_compli Yes Yes
EU RoHS regulations Yes Yes
state Active Active
structure SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE
Maximum leakage current 0.3000 A 0.3000 A
Maximum drain on-resistance 3 ohm 3 ohm
feedback capacitor 5 pF 5 pF
field effect transistor technology METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR
jesd_30_code R-PDSO-G3 R-PDSO-G3
jesd_609_code e3 e3
moisture_sensitivity_level 1 1
Number of components 1 1
operating mode ENHANCEMENT MODE ENHANCEMENT MODE
Packaging Materials PLASTIC/EPOXY PLASTIC/EPOXY
packaging shape RECTANGULAR RECTANGULAR
Package Size SMALL OUTLINE SMALL OUTLINE
eak_reflow_temperature__cel_ 260 260
larity_channel_type N-CHANNEL N-CHANNEL
surface mount YES YES
terminal coating MATTE TIN MATTE TIN
Terminal form GULL WING GULL WING
Terminal location DUAL DUAL
ime_peak_reflow_temperature_max__s_ 40 40
transistor applications SWITCHING SWITCHING
Transistor component materials SILICON SILICON
dditional_feature ESD PROTECTION, HIGH RELIABILITY, LOW THRESHOLD ESD PROTECTION, HIGH RELIABILITY, LOW THRESHOLD
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