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MBRB7H60

Description
7.5 A, 35 V, SILICON, RECTIFIER DIODE, TO-263AB
CategoryDiscrete semiconductor    diode   
File Size145KB,6 Pages
ManufacturerVishay
Websitehttp://www.vishay.com
Download Datasheet Parametric Compare View All

MBRB7H60 Overview

7.5 A, 35 V, SILICON, RECTIFIER DIODE, TO-263AB

MBRB7H60 Parametric

Parameter NameAttribute value
MakerVishay
Reach Compliance Codeunknow
ConfigurationSINGLE
Diode typeRECTIFIER DIODE
Maximum forward voltage (VF)0.61 V
Maximum non-repetitive peak forward current150 A
Number of components1
Maximum operating temperature175 °C
Maximum output current7.5 A
Maximum repetitive peak reverse voltage60 V
surface mountYES
technologySCHOTTKY
MBR(F,B)7H35 thru MBR(F,B)7H60
www.vishay.com
Vishay General Semiconductor
Schottky Barrier Rectifier
High Barrier Technology for Improved HighTemperature Performance
FEATURES
TO-220AC
ITO-220AC
• Guardring for overvoltage protection
• Low power loss, high efficiency
• Low forward voltage drop
• Low leakage current
• High forward surge capability
• High frequency operation
• Meets MSL level 1, per J-STD-020, LF maximum peak of
245 °C (for TO-263AB package)
• Solder bath temperature 275 °C maximum, 10 s, per
JESD 22-B106 (for TO-220AC and ITO-220AC package)
• AEC-Q101 qualified
• Material categorization: For definitions of compliance
please see
www.vishay.com/doc?99912
2
MBR7Hxx
PIN 1
PIN 2
2
1
MBRF7Hxx
PIN 1
1
CASE
PIN 2
TO-263AB
K
2
1
MBRB7Hxx
PIN 1
PIN 2
K
HEATSINK
TYPICAL APPLICATIONS
For use in low voltage, high frequency rectifier of switching
mode power supplies, freewheeling diodes, DC/DC
converters and polarity protection application.
MECHANICAL DATA
Case:
TO-220AC, ITO-220AC, TO-263AB
Molding compound meets UL 94 V-0 flammability rating
Base P/N-E3 - RoHS-compliant, commercial grade
Base P/NHE3 - RoHS-compliant, AEC-Q101 qualified
Terminals:
Matte tin plated leads, solderable per
J-STD-002 and JESD 22-B102
E3 suffix meets JESD 201 class 1A whisker test, HE3 suffix
meets JESD 201 class 2 whisker test
Polarity:
As marked
Mounting Torque:
10 in-lbs maximum
PRIMARY CHARACTERISTICS
I
F(AV)
V
RRM
I
FSM
V
F
I
R
T
J
max.
7.5 A
35 V to 60 V
150 A
0.55 V, 0.61 V
50 μA
175 °C
MAXIMUM RATINGS
(T
C
= 25 °C unless otherwise noted)
PARAMETER
Maximum repetitive peak reverse voltage
Working peak reverse voltage
Maximum DC blocking voltage
Maximum average forward rectified current (Fig.1)
Non-repetitive avalanche energy at 25 °C, I
AS
= 4 A, L =10 mH
Peak forward surge current 8.3 ms single half sine-wave
superimposed on rated load
Peak repetitive reverse surge current at t
p
= 2.0 µs, 1 kHz
Peak non-repetitive reverse energy (8/20 μs waveform)
Electrostatic discharge capacitor voltage human body model:
C = 100 pF, R = 1.5 k
Operating junction and storage temperature range
Voltage rate of change (rated V
R
)
Isolation voltage (ITO-220AC only) from terminal to heatsink
t = 1 min
SYMBOL
V
RRM
V
RWM
V
DC
I
F(AV)
E
AS
I
FSM
I
RRM
E
RSM
V
C
T
J
, T
STG
dV/dt
V
AC
1.0
20
25
- 65 to + 175
10 000
1500
MBR7H35
35
35
35
MBR7H45
45
45
45
7.5
80
150
0.5
10
mJ
kV
°C
V/μs
V
MBR7H50
50
50
50
MBR7H60
60
60
60
A
mJ
A
V
UNIT
Revision: 15-Jun-12
Document Number: 88796
1
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000

MBRB7H60 Related Products

MBRB7H60 MBR7H35_15 MBRB7H35 MBRF7H35 MBRFB7H60
Description 7.5 A, 35 V, SILICON, RECTIFIER DIODE, TO-263AB 7.5 A, 35 V, SILICON, RECTIFIER DIODE, TO-263AB 7.5 A, 35 V, SILICON, RECTIFIER DIODE, TO-263AB 7.5 A, 35 V, SILICON, RECTIFIER DIODE, TO-220AC 7.5 A, 35 V, SILICON, RECTIFIER DIODE, TO-263AB
Reach Compliance Code unknow - unknow unknow -
Configuration SINGLE - SINGLE SINGLE -
Diode type RECTIFIER DIODE - RECTIFIER DIODE RECTIFIER DIODE -
Maximum forward voltage (VF) 0.61 V - 0.55 V 0.55 V -
Maximum non-repetitive peak forward current 150 A - 150 A 150 A -
Number of components 1 - 1 1 -
Maximum operating temperature 175 °C - 175 °C 175 °C -
Maximum output current 7.5 A - 7.5 A 7.5 A -
Maximum repetitive peak reverse voltage 60 V - 35 V 35 V -
surface mount YES - YES NO -
technology SCHOTTKY - SCHOTTKY SCHOTTKY -

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