CYStech Electronics Corp.
10Amp. Schottky Barrier Rectifiers
Spec. No. : C457J3
Issued Date : 2012.01.11
Revised Date :
Page No. : 1/7
MBR10100AJ3
Features
•
Low V
F
and low I
R
type
•
High junction temperature capability
•
High current capability
•
High surge capability
•
Good tradeoff between leakage current and forward voltage drop
•
Low power loss, high efficiency
•
RoHS compliant package
•
Pb-free lead plating
I
F(AV)
V
RRM
Tj
V
F
10A
100V
175°C
0.67V
Mechanical Data
•
Case: TO-252 molded plastic
•
Mounting Position: Any
•
Weight: 0.34 grams approximately
•
Terminals: Pure tin plated, lead-free, solderable per MIL-STD-750 method 2026
•
Epoxy: UL 94V-0 rate flame retardant
•
Lead temperature for soldering purpose : 260℃ max. for 10 seconds
Equivalent Circuit
MBR10100AJ3
Outline
TO-252AB
TO-252AA
A K A
A K A
MBR10100AJ3
CYStek Product Specification
CYStech Electronics Corp.
Maximum Ratings and Electrical Characteristics (Per Leg)
(
Rating at 25°C ambient temperature unless otherwise specified.
Spec. No. : C457J3
Issued Date : 2012.01.11
Revised Date :
Page No. : 2/7
resistive or inductive load.
Single phase, half wave, 60Hz,
For capacitive load, derate current by 20%.)
Symbol
V
RRM
V
RMS
V
DC
V
F
Min.
Typ.
Max.
100
70
100
0.86
0.75
0.95
0.85
Parameter
Maximum Recurrent peak reverse voltage
Maximum RMS voltage
Maximum DC blocking voltage
I
F
=10A, T
C
=25℃
Maximum instantaneous
I
F
=10A, T
C
=125℃
forward voltage at
(Note 1)
Units
V
V
V
V
0.67
I
F
=20 A, T
C
=25℃
I
F
=20A, T
C
=125℃
Maximum Average forward rectified current
@ T
C
=145℃
Peak repetitive forward current (Rated V
R
,
square wave, 20kHz) @T
C
=135℃
Peak forward surge current @8.3ms single half
sine wave superimposed on rated load (JEDEC
method)
Peak repetitive reverse surge current
(Note 1 ), T
J
<175℃
V
R
=100 V, T
C
=25℃
Maximum instantaneous
reverse current at
V
R
=100 V, T
C
=125℃
I
F(AV)
I
FRM
I
FSM
I
RRM
I
R
dV/dt
C
J
T
stg
T
J
-55
-65
260
10
20
150
3.0
5.0
1.0
10,000
8000
+175
+175
A
A
A
A
μA
mA
V/μs
pF
V
℃
℃
Voltage rate of change, (rated V
R
)
Typical junction capacitance @ f=1MHz and applied
4V reverse voltage
ESD susceptibility
(Note 2)
Storage temperature range
Operating junction temperature range
Notes : 1. 2.0μs pulse width, f=1.0kHz
2. Human body model, 1.5kΩ in series with 100pF
Thermal Data
Parameter
Maximum Thermal Resistance, Junction-to-case, per diode
Maximum Thermal Resistance, Junction-to-ambient
Symbol
R
th,j-c
R
th,j-a
Value
3.5
90
Unit
°C/W
°C/W
Ordering Information
Device
MBR10100AJ3
Package
TO-252
(RoHS compliant package)
Shipping
2500 pcs/ Tape & Reel
Marking
10100A
MBR10100AJ3
CYStek Product Specification
CYStech Electronics Corp.
Characteristic Curves
Forward Current Derating Curve
12
10
8
6
4
2
0
0
25
50
75
100
125
150
175
Case Temperature---T
C
(℃)
Peak Forward Surge Current---I
FSM
(A)
Spec. No. : C457J3
Issued Date : 2012.01.11
Revised Date :
Page No. : 3/7
Maximum Non-Repetitive Forward Surge Current
200
Tj=150℃, 8.3ms Single
Half Sine Wave, JEDEC
method, Per leg
Average Forward Current---Io(A)
150
resistive or inductive load
100
50
0
1
10
Number of Cycles at 60Hz
100
Forward Current vs Forward Voltage
100000
Instantaneous Forward Current---I
F
(mA)
Per leg
Junction Capacitance vs Reverse Voltage
1000
Junction Capacitance---C
J
(pF)
Tj=25℃, f=1.0MHz
Per Leg
10000
1000
100
10
1
0
0.2
0.4 0.6 0.8
1
1.2
Forward Voltage---V
F
(V)
1.4
Tj=150℃
Tj=25℃
Pulse width=300μs,
1% Duty cycle
100
0.1
1
Reverse Voltage---V
R
(V)
10
Reverse Leakage Current vs Reverse Voltage
1000
Reverse Leakage Current---I
R
(μA)
100
Tj=125℃
10
Tj=75℃
1
0.1
0.01
0
20
40
60
80
100 120 140
Percent of Rated Peak
Reverse Voltage---(%)
Tj=25℃
Per leg
MBR10100AJ3
CYStek Product Specification
CYStech Electronics Corp.
Reel Dimension
Spec. No. : C457J3
Issued Date : 2012.01.11
Revised Date :
Page No. : 4/7
Carrier Tape Dimension
MBR10100AJ3
CYStek Product Specification
CYStech Electronics Corp.
Recommended wave soldering condition
Product
Pb-free devices
Peak Temperature
260 +0/-5
°C
Spec. No. : C457J3
Issued Date : 2012.01.11
Revised Date :
Page No. : 5/7
Soldering Time
5 +1/-1 seconds
Recommended temperature profile for IR reflow
Profile feature
Average ramp-up rate
(Tsmax to Tp)
Preheat
−Temperature
Min(T
S
min)
−Temperature
Max(T
S
max)
−Time(ts
min
to ts
max
)
Time maintained above:
−Temperature
(T
L
)
−
Time (t
L
)
Peak Temperature(T
P
)
Time within 5°C of actual peak
temperature(tp)
Ramp down rate
Time 25
°C
to peak temperature
Sn-Pb eutectic Assembly
3°C/second max.
100°C
150°C
60-120 seconds
183°C
60-150 seconds
240 +0/-5
°C
10-30 seconds
6°C/second max.
6 minutes max.
Pb-free Assembly
3°C/second max.
150°C
200°C
60-180 seconds
217°C
60-150 seconds
260 +0/-5
°C
20-40 seconds
6°C/second max.
8 minutes max.
MBR10100AJ3
CYStek Product Specification
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