Preliminary
Datasheet
HITJ0302MP
–30V, –2.2A, 173mmax.
Silicon P Channel MOS FET
Power Switching
Features
Low on-resistance
R
DS(on)
= 138 m typ (V
GS
= –10 V, I
D
= –1.1 A)
Low drive current
High speed switching
4.5 V gate drive
R07DS0477EJ0200
Rev.2.00
May 09, 2013
Outline
RENESAS Package code: PLSP0003ZB-A
(Package name: MPAK)
3
D
3
2
1
2
S
1
G
1. Source
2. Gate
3. Drain
Note:
Marking is “NV”.
Absolute Maximum Ratings
(Ta = 25°C)
Item
Drain to source voltage
Gate to source voltage
Drain current
Drain peak current
Body - drain diode reverse drain current
Channel dissipation
Channel temperature
Storage temperature
Symbol
V
DSS
V
GSS
I
D
I
D(Pulse) Note1
I
DR
Pch
Note2
Tch
Tstg
Ratings
–30
+10 / –20
–2.2
–5
–2.2
0.8
150
–55 to +150
Unit
V
V
A
A
A
W
C
C
Notes: 1. PW
10
s,
duty cycle
1%
2. When using the glass epoxy board (FR-4: 40
40
1 mm)
R07DS0477EJ0200 Rev.2.00
May 09, 2013
Page 1 of 6
HITJ0302MP
Preliminary
Electrical Characteristics
(Ta = 25°C)
Item
Drain to source breakdown voltage
Gate to source breakdown voltage
Gate to source breakdown voltage
Gate to source leak current
Gate to source leak current
Drain to source leak current
Gate to source cutoff voltage
Drain to source on state resistance
Forward transfer admittance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn - on delay time
Rise time
Turn - off delay time
Fall time
Total gate charge
Gate to source charge
Gate to drain charge
Body - drain diode forward voltage
Notes: 3. Pulse test
Symbol
V
(BR)DSS
V
(BR)GSS
V
(BR)GSS
I
GSS
I
GSS
I
DSS
V
GS(off)
R
DS(on)
R
DS(on)
|y
fs
|
Ciss
Coss
Crss
t
d(on)
t
r
t
d(off)
t
f
Qg
Qgs
Qgd
V
DF
Min
–30
+10
–20
—
—
—
–1.0
—
—
1.2
—
—
—
—
—
—
—
—
—
—
—
Typ
—
—
—
—
—
—
—
138
216
2.1
195
42
29
19
25
30
4.6
4.2
0.7
1.0
–0.9
Max
—
—
—
+10
–10
–1
–2.0
173
303
—
—
—
—
—
—
—
—
—
—
—
—
Unit
V
V
V
A
A
A
V
m
m
S
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
V
Test conditions
I
D
= –10 mA, V
GS
= 0
I
G
=
+100 A,
V
DS
= 0
I
G
=
–100 A,
V
DS
= 0
V
GS
=
+8
V, V
DS
= 0
V
GS
=
–16
V, V
DS
= 0
V
DS
= –30 V, V
GS
= 0
V
DS
= –10 V, I
D
= –1 mA
I
D
= –1.1 A, V
GS
= –10 V
Note3
I
D
= –1.1 A, V
GS
= –4.5 V
Note3
I
D
= –1.1 A, V
DS
= –10 V
Note3
V
DS
= –10 V, V
GS
= 0,
f = 1 MHz
I
D
= –0.5 A, V
GS
= –10 V,
R
L
= 20
,
Rg = 4.7
V
DD
= –10 V, V
GS
= –10 V,
I
D
= –2.2A
I
F
= –1.5 A, V
GS
= 0
Note3
R07DS0477EJ0200 Rev.2.00
May 09, 2013
Page 2 of 6
HITJ0302MP
Preliminary
Main Characteristics
Maximum Channel Power
Dissipation Curve
1.2
–100
Operation in this area
is limited by R
DS(on)
10
1
m
s
Maximum Safe Operation Area
Channel Dissipation Pch (W)
Drain Current I
D
(A)
1.0
0.8
0.6
0.4
0.2
0
–10
0
μ
s
PW
–1
=
10
D
C
m
O
s
pe
ra
–0.1
Tc = 25
°
C
tio
n
0
25
50
75
100
125
150
–0.01
–0.01
–0.1
–1
–10
–100
Ambient Temperature Ta (°C)
*When using the glass epoxy board (FR-4: 40
×
40
×
1 mm)
Drain to Source Voltage V
DS
(V)
Typical Output Characteristics
–1.0
–0.8
–10 V
–4.5 V
Typical Transfer Characteristics
(1)
–1.0
V
DS
= –10 V
Pulse Test
-2.8 V
Drain Current I
D
(A)
–3 V
-2.6 V
Drain Current I
D
(A)
–0.8
–0.6
–0.6
Tc = 75°C
–0.4
25°C
–0.2
–25°C
–0.4
-2.4 V
–0.2
Pulse Test
Tc = 25
°
C
V
GS
= 0 V
-2.2 V
0
0
–1
–2
–3
–4
–5
0
0
–0.5
–1
–1.5
–2
–2.5
–3
Drain to Source Voltage V
DS
(V)
Gate to Source Voltage V
GS
(V)
Gate to Source Cutoff Voltage vs.
Gate to Source Cutoff Voltage
V
GS(off)
(V)
Typical Transfer Characteristics
(2)
–0.1
Case Temperature
–2.5
V
DS
=
–10
V
Pulse Test
Tc = 75°C
Drain Current I
D
(A)
–2.0
I
D
= –10 mA
–1.5
–1 mA
–0.1 mA
V
DS
= –10 V
Pulse Test
–0.5
–25
0
25
50
75
100 125
150
–0.01
25°C
–25°C
–0.001
–1.0
–0.0001
0
–0.5
–1
–1.5
–2
–2.5
–3
Gate to Source Voltage V
GS
(V)
Case Temperature Tc (°C)
R07DS0477EJ0200 Rev.2.00
May 09, 2013
Page 3 of 6
HITJ0302MP
Drain to Source Saturation Voltage vs.
Gate to Source Voltage
–
0.8
Preliminary
Static Drain to Source on State Resistance
vs. Drain Current
Drain to Source Saturation Voltage V
DS(on)
(V)
Drain to Source on State Resistance
R
DS(on)
(Ω)
1.0
Pulse Test
Tc = 25°C
0.3
V
DS
=
–
4.5 V
Pulse Test
Tc = 25°C
–
0.6
–
0.4
–
1.0 A
–
0.5 A
0.1
–
10 V
–
0.2
–
0.2 A
0.03
0
0
–
4
–
8
–
12
–
16
–
20
0.01
–
0.1
–
0.3
–
1.0
–
3
–
10
Gate to Source Voltage V
GS
(V)
Static Drain to Source on State Resistance
vs. Case Temperature
Drain Current I
D
(A)
Static Drain to Source on State Resistance
vs. Case Temperature
Drain to Source on State Resistance
R
DS(on)
(mΩ)
Drain to Source on State Resistance
R
DS(on)
(mΩ)
400
350
300
250
200
150
100
50
–25
–
0.5 A
–
0.2 A
300
250
Pulse Test
V
GS
=
–
10 V
Pulse Test
V
GS
=
–
4.5 V
I
D
=
–
1 A
200
I
D
=
–
1 A
–
0.5 A
–
0.2 A
150
100
0
25
50
75
100 125 150
50
–25
0
25
50
75
100 125
150
Case Temperature Tc (°C)
Case Temperature Tc (°C)
10
Pulse Test
V
DS
=
–
10 V
3
–25°C
1
Tc = 75°C
0.3
25°C
Zero Gate Voltage Drain current I
DSS
(nA)
Forward Transfer Admittance vs.
Drain Current
Zero Gate Voltage Drain current vs.
Case Temperature
–
1000
Forward Transfer Admittance |yfs| (S)
Pulse Test
V
GS
= 0 V
V
DS
=
–3
0 V
–
100
–
10
0.1
–
0.1
–
0.3
–
1
–
1
–25
0
25
50
75
100 125 150
Drain Current I
D
(A)
Case Temperature Tc (°C)
R07DS0477EJ0200 Rev.2.00
May 09, 2013
Page 4 of 6
HITJ0302MP
Dynamic Input Characteristics
Drain to Source Voltage V
DS
(V)
V
DS
V
DD
=
–
25 V
V
DD
=
–
10 V
–
40
–
25 V
–
10 V
Preliminary
Switching Characteristics
Gate to Source Voltage V
GS
(V)
0
1000
V
DD
=
–
10 V
V
GS
=
–
10 V
Rg = 4.7
Ω
PW = 5
μs
Tc = 25°C
td(off)
td(on)
10
tr
0
Switching Time t (ns)
–
20
-4
100
tf
-8
–
60
-12
V
GS
–
80
I
D
=
–
2.2 A
Tc = 25°C
0
1
2
3
4
5
6
-16
–
100
-20
1
–
0.01
–
0.1
–
1
–
10
Gate Charge Qg (nC)
Drain Current I
D
(A)
Typical Capacitance vs.
Drain to Source Voltage
1000
V
GS
= 0 V
f = 1 MHz
Input Capacitance vs.
Gate to Source Voltage
360
V
DS
= 0 V
f = 1 MHz
Ciss, Coss, Crss (pF)
320
Ciss
100
Ciss (pF)
Coss
Crss
0
–
10
–
20
–
30
280
240
10
200
–10
–5
0
5
10
Drain to Source Voltage V
DS
(V)
Reverse Drain Current vs.
Source to Drain Voltage
–
1.0
Gate to Source Voltage V
GS
(V)
Body-Drain Diode Forward Voltage vs.
Case Temperature
–
0.8
Body-Drain Diode Forward Voltage V
SDF
(V)
Reverse Drain Current I
DR
(A)
V
GS
=
–10 V
–
0.8
–5 V
Pulse Test
Tc = 25°C
V
GS
= 0
–
0.7
–
0.6
–
0.6
I
D
=
–
10 mA
–
0.5
–
0.4
–
0.3
–
0.2
–
1 mA
–
0.4
V
GS
= 0 V, 5 V
–
0.2
0
0
–
0.4
–
0.8
–
1.2
–
1.6
–
2.0
25
50
75
100
125
150
Source to Drain Voltage V
SD
(V)
Case Temperature Tc (°C)
R07DS0477EJ0200 Rev.2.00
May 09, 2013
Page 5 of 6
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