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PD46365362BF1-E33Y-EQ1

Description
36M-BIT QDRTM II SRAM 2-WORD BURST OPERATION
File Size599KB,36 Pages
ManufacturerRenesas Electronics Corporation
Websitehttps://www.renesas.com/
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PD46365362BF1-E33Y-EQ1 Overview

36M-BIT QDRTM II SRAM 2-WORD BURST OPERATION

Datasheet
μ
PD46365092B
μ
PD46365182B
μ
PD46365362B
36M-BIT QDR
TM
II SRAM
2-WORD BURST OPERATION
Description
The
μ
PD46365092B is a 4,194,304-word by 9-bit, the
μ
PD46365182B is a 2,097,152-word by 18-bit and the
μ
PD46365362B is a 1,048,576-word by 36-bit synchronous quad data rate static RAM fabricated with advanced CMOS
technology using full CMOS six-transistor memory cell.
The
μ
PD46365092B,
μ
PD46365182B and
μ
PD46365362B integrate unique synchronous peripheral circuitry and a
burst counter. All input registers controlled by an input clock pair (K and K#) are latched on the positive edge of K and
K#.
These products are suitable for application which require synchronous operation, high speed, low voltage, high density
and wide bit configuration. These products are packaged in 165-pin PLASTIC BGA.
R10DS0089EJ0400
Rev.4.00
Nov 09, 2012
Features
1.8 ± 0.1 V power supply
165-pin PLASTIC BGA (13 x 15)
HSTL interface
PLL circuitry for wide output data valid window and future frequency scaling
Separate independent read and write data ports with concurrent transactions
100% bus utilization DDR READ and WRITE operation
Two-tick burst for low DDR transaction size
Two input clocks (K and K#) for precise DDR timing at clock rising edges only
Two output clocks (C and C#) for precise flight time and clock skew matching-clock
and data delivered together to receiving device
Internally self-timed write control
Clock-stop capability. Normal operation is restored in 20
μ
s after clock is resumed.
User programmable impedance output (35 to 70
Ω)
Fast clock cycle time : 3.3 ns (300 MHz), 4.0 ns (250 MHz).
Simple control logic for easy depth expansion
JTAG 1149.1 compatible test access port
R10DS0089EJ0400 Rev.4.00
Nov 09, 2012
Page 1 of 35

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