SM-8 COMPLEMENTARY MEDIUM POWER
TRANSISTORS
ISSUE 1 - NOVEMBER 1995
ZDT6757
C
1
C
1
C
2
C
2
PARTMARKING DETAIL T6757
B
1
E
1
B
2
E
2
NPN
PNP
SM-8
(8 LEAD SOT223)
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Peak Pulse Current
Continuous Collector Current
SYMBOL
V
CBO
V
CEO
V
EBO
I
CM
I
C
NPN
300
300
5
1
0.5
PNP
-300
-300
-5
-1
-0.5
UNIT
V
V
V
A
A
°C
Operating and Storage Temperature Range T
j
:T
stg
-55 to +150
THERMAL CHARACTERISTICS
PARAMETER
Total Power Dissipation at T
amb
= 25°C*
Any single die on
Both die on equally
Derate above 25°C*
Any single die on
Both die on equally
Thermal Resistance - Junction to Ambient*
Any single die on
Both die on equally
SYMBOL
P
tot
VALUE
2.25
2.75
18
22
55.6
45.5
UNIT
W
W
mW/ °C
mW/ °C
°C/ W
°C/ W
* The power which can be dissipated assuming the device is mounted in a typical manner
on a PCB with copper equal to 2 inches square.
3 - 378
ZDT6757
NPN TRANSISTOR
ELECTRICAL CHARACTERISTICS (at T
amb
= 25°C).
PARAMETER
Collector-Base
Breakdown Voltage
Collector-Emitter
Breakdown Voltage
Emitter-Base
Breakdown Voltage
Collector Cutoff
Current
Emitter Cutoff Current
Collector-Emitter
Saturation Voltage
Base-Emitter
Saturation Voltage
Base-Emitter Turn-On
Voltage
Static Forward
Current Transfer Ratio
Transition
Frequency
Output Capacitance
SYMBOL
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
CBO
I
EBO
V
CE(sat)
V
BE(sat)
V
BE(on)
h
FE
f
T
C
obo
50
40
30
20
MHz
pF
MIN.
300
300
5
100
100
0.5
1
1
TYP.
MAX.
UNIT
V
V
V
nA
nA
V
V
V
CONDITIONS.
I
C
=100
µ
A, I
E
=0
I
C
=10mA, I
B
=0*
I
E
=100
µ
A, I
C
=0
V
CB
=200V, I
E
=0
V
EB
=3V, I
C
=0
I
C
=100mA, I
B
=10mA*
I
C
=100mA, I
B
=10mA*
I
C
=100mA, V
CE
=5V*
I
C
=100mA, V
CE
=5V
I
C
=10mA, V
CE
=5V
I
C
=10mA, V
CE
=20V
f=20MHz
V
CB
=20V, f=1MHz
*Measured under pulsed conditions. Pulse width=300
µ
s. Duty cycle
≤
2%
For typical characteristics graphs see FZT657 datasheet.
3 - 379
ZDT6757
PNP TRANSISTOR
ELECTRICAL CHARACTERISTICS (at T
amb
= 25°C unless otherwise stated).
PARAMETER
Collector-Base
Breakdown Voltage
Collector-Emitter
Breakdown Voltage
Emitter-Base
Breakdown Voltage
Collector Cutoff
Current
Emitter Cutoff Current
Collector-Emitter
Saturation Voltage
Base-Emitter
Saturation Voltage
Base-Emitter Turn-On
Voltage
Static Forward
Current Transfer Ratio
Transition
Frequency
Output Capacitance
SYMBOL
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
CBO
I
EBO
V
CE(sat)
V
BE(sat)
V
BE(on)
h
FE
f
T
C
obo
50
40
30
20
MHz
pF
MIN.
-300
-300
-5
TYP.
MAX.
UNIT
V
V
V
nA
nA
nA
V
V
V
CONDITIONS.
I
C
=-100
µ
A, I
E
=0
I
C
=-10mA, I
B
=0*
I
E
=-100
µ
A, I
C
=0
V
CB
=-160V, I
E
=0
V
CB
=-200V, I
E
=0
V
EB
=-3V, I
C
=0
I
C
=-100mA, I
B
=-10mA*
I
C
=-100mA, I
B
=-10mA*
I
C
=-100mA, V
CE
=-5V*
I
C
=-100mA, V
CE
=-5V*
I
C
=-10mA, V
CE
=-5V*
I
C
=-10mA, V
CE
=-20V
f=20MHz
V
CB
=-20V, f=1MHz
-100
-100
-0.5
-1.0
-1.0
*Measured under pulsed conditions. Pulse width=300
µ
s. Duty cycle
≤
2%
For typical characteristics graphs see FZT757 datasheet.
3 - 380
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