15KP16A datasheet, PDF - EEWORLD Datasheet

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15KP16A: Description15000 W, UNIDIRECTIONAL, SILICON, TVS DIODE; CategoryDiscrete semiconductor diode; File Size473KB，3 Pages; ManufacturerNew Jersey Semiconductor; Websitehttp://www.njsemi.com; Environmental Compliance

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15KP16A Overview

15000 W, UNIDIRECTIONAL, SILICON, TVS DIODE

15KP16A Parametric

Parameter Name	Attribute value
Is it Rohs certified?	conform to
package instruction	O-PALF-W2
Reach Compliance Code	unknown
Is Samacsys	N
Other features	LOW ZENER IMPEDANCE, EXCELLENT CLAMPING CAPABILITY
Minimum breakdown voltage	17.8 V
Breakdown voltage nominal value	17.8 V
Shell connection	ISOLATED
Maximum clamping voltage	26 V
Configuration	SINGLE
Diode component materials	SILICON
Diode type	TRANS VOLTAGE SUPPRESSOR DIODE
JESD-30 code	O-PALF-W2
Maximum non-repetitive peak reverse power dissipation	15000 W
Number of components	1
Number of terminals	2
Maximum operating temperature	175 °C
Minimum operating temperature	-55 °C
Package body material	PLASTIC/EPOXY
Package shape	ROUND
Package form	LONG FORM
Peak Reflow Temperature (Celsius)	NOT SPECIFIED
polarity	UNIDIRECTIONAL
Maximum power dissipation	7 W
Maximum repetitive peak reverse voltage	16 V
surface mount	NO
technology	AVALANCHE
Terminal form	WIRE
Terminal location	AXIAL
Maximum time at peak reflow temperature	NOT SPECIFIED
Base Number Matches	1

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Description	15000 W, UNIDIRECTIONAL, SILICON, TVS DIODE	Silicon NPN Power Transistors	DDR Termination Regulator	15000 W, UNIDIRECTIONAL, SILICON, TVS DIODE	15000 W, UNIDIRECTIONAL, SILICON, TVS DIODE	15000 W, UNIDIRECTIONAL, SILICON, TVS DIODE	15000 W, UNIDIRECTIONAL, SILICON, TVS DIODE	15000 W, UNIDIRECTIONAL, SILICON, TVS DIODE	15000 W, UNIDIRECTIONAL, SILICON, TVS DIODE
Is it Rohs certified?	conform to	-	-	conform to	conform to	conform to	conform to	conform to	conform to
package instruction	O-PALF-W2	-	-	O-PALF-W2	O-PALF-W2	O-PALF-W2	O-PALF-W2	O-PALF-W2	O-PALF-W2
Reach Compliance Code	unknown	-	-	unknow	unknow	unknow	unknown	unknow	unknow
Other features	LOW ZENER IMPEDANCE, EXCELLENT CLAMPING CAPABILITY	-	-	LOW ZENER IMPEDANCE, EXCELLENT CLAMPING CAPABILITY	LOW ZENER IMPEDANCE, EXCELLENT CLAMPING CAPABILITY	LOW ZENER IMPEDANCE, EXCELLENT CLAMPING CAPABILITY	LOW ZENER IMPEDANCE, EXCELLENT CLAMPING CAPABILITY	LOW ZENER IMPEDANCE, EXCELLENT CLAMPING CAPABILITY	LOW ZENER IMPEDANCE, EXCELLENT CLAMPING CAPABILITY
Minimum breakdown voltage	17.8 V	-	-	18.9 V	18.9 V	20 V	20 V	22.2 V	22.2 V
Breakdown voltage nominal value	17.8 V	-	-	18.9 V	18.9 V	20 V	20 V	22.2 V	22.2 V
Shell connection	ISOLATED	-	-	ISOLATED	ISOLATED	ISOLATED	ISOLATED	ISOLATED	ISOLATED
Maximum clamping voltage	26 V	-	-	32.2 V	29.3 V	34.2 V	30.9 V	37.9 V	34.3 V
Configuration	SINGLE	-	-	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE
Diode component materials	SILICON	-	-	SILICON	SILICON	SILICON	SILICON	SILICON	SILICON
Diode type	TRANS VOLTAGE SUPPRESSOR DIODE	-	-	TRANS VOLTAGE SUPPRESSOR DIODE	TRANS VOLTAGE SUPPRESSOR DIODE	TRANS VOLTAGE SUPPRESSOR DIODE	TRANS VOLTAGE SUPPRESSOR DIODE	TRANS VOLTAGE SUPPRESSOR DIODE	TRANS VOLTAGE SUPPRESSOR DIODE
JESD-30 code	O-PALF-W2	-	-	O-PALF-W2	O-PALF-W2	O-PALF-W2	O-PALF-W2	O-PALF-W2	O-PALF-W2
Maximum non-repetitive peak reverse power dissipation	15000 W	-	-	15000 W	15000 W	15000 W	15000 W	15000 W	15000 W
Number of components	1	-	-	1	1	1	1	1	1
Number of terminals	2	-	-	2	2	2	2	2	2
Maximum operating temperature	175 °C	-	-	150 °C	175 °C	150 °C	175 °C	150 °C	175 °C
Minimum operating temperature	-55 °C	-	-	-55 °C	-55 °C	-55 °C	-55 °C	-55 °C	-55 °C
Package body material	PLASTIC/EPOXY	-	-	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY
Package shape	ROUND	-	-	ROUND	ROUND	ROUND	ROUND	ROUND	ROUND
Package form	LONG FORM	-	-	LONG FORM	LONG FORM	LONG FORM	LONG FORM	LONG FORM	LONG FORM
Peak Reflow Temperature (Celsius)	NOT SPECIFIED	-	-	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED
polarity	UNIDIRECTIONAL	-	-	UNIDIRECTIONAL	UNIDIRECTIONAL	UNIDIRECTIONAL	UNIDIRECTIONAL	UNIDIRECTIONAL	UNIDIRECTIONAL
Maximum power dissipation	7 W	-	-	7 W	7 W	7 W	7 W	7 W	7 W
Maximum repetitive peak reverse voltage	16 V	-	-	17 V	17 V	18 V	18 V	20 V	20 V
surface mount	NO	-	-	NO	NO	NO	NO	NO	NO
technology	AVALANCHE	-	-	AVALANCHE	AVALANCHE	AVALANCHE	AVALANCHE	AVALANCHE	AVALANCHE
Terminal form	WIRE	-	-	WIRE	WIRE	WIRE	WIRE	WIRE	WIRE
Terminal location	AXIAL	-	-	AXIAL	AXIAL	AXIAL	AXIAL	AXIAL	AXIAL
Maximum time at peak reflow temperature	NOT SPECIFIED	-	-	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED
Maker	-	-	-	New Jersey Semiconductor	-	New Jersey Semiconductor	New Jersey Semiconductor	New Jersey Semiconductor	New Jersey Semiconductor

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