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2SB1258_07

Description
Silicon PNP Epitaxial Planar Transistor
File Size25KB,1 Pages
ManufacturerSANKEN
Websitehttp://www.sanken-ele.co.jp/en/
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2SB1258_07 Overview

Silicon PNP Epitaxial Planar Transistor

(3 k
Ω)(1
0 0Ω) E
Darlington
s
Absolute maximum ratings
(Ta=25°C)
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
B
P
C
Tj
T
stg
Ratings
–100
–100
–6
–6(
Pulse
–10)
–1
30(Tc=25°C)
150
–55 to +150
Unit
V
V
V
A
A
W
°C
°C
2SB1258
s
Electrical Characteristics
Symbol
I
CBO
I
EBO
V
(BR)CEO
h
FE
V
CE
(sat)
V
BE
(sat)
f
T
C
OB
Conditions
V
CB
=–100V
V
EB
=–6V
I
C
=–10mA
V
CE
=–2V, I
C
=–3A
I
C
=–3A, I
B
=–6mA
I
C
=–3A, I
B
=–6mA
V
CE
=–12V, I
E
=0.2A
V
CB
=–10V, f=1MHz
Ratings
–10
max
–10
max
–100
min
1000
min
–1.5
max
–2
max
100typ
100typ
V
V
MHz
pF
13.0min
B
Equivalent circuit
C
Silicon PNP Epitaxial Planar Transistor
(Complement to type 2SD1785)
Application :
Driver for Solenoid, Relay and Motor and General Purpose
(Ta=25°C)
Unit
External Dimensions
FM20(TO220F)
4.0
±0.2
10.1
±0.2
4.2
±0.2
2.8 c0.5
µ
A
V
16.9
±0.3
8.4
±0.2
µ
A
1.35
±0.15
1.35
±0.15
0.85
+0.2
-0.1
0.45
+0.2
-0.1
2.54
2.2
±0.2
2.4
±0.2
s
Typical Switching Characteristics (Common Emitter)
V
CC
(V)
–30
R
L
(Ω)
10
I
C
(A)
–3
V
BB1
(V)
–10
V
BB2
(V)
5
I
B1
(mA)
–6
I
B2
(mA)
6
t
on
(
µ
s)
0.6typ
t
stg
(
µ
s)
1.6typ
t
f
(
µ
s)
0.5typ
2.54
3.9
B C E
±0.2
0.8
±0.2
a
b
ø3.3
±0.2
Weight : Approx 2.0g
a. Part No.
b. Lot No.
I
C
– V
C E
Characteristics
(Typical)
–6
A
4m
3.
–2
.4
V
CE
( sat ) – I
B
Characteristics
(Typical)
C o l l e c to r - E m i t t er S a tu r a t i o n Vo lt a g e V
CE (sat)
(V )
–3
I
C
– V
B E
Temperature Characteristics
(Typical)
–6
( V
C E
=– 4 V )
mA
A
2.0m
–1 .8 m A
I
B
–5
C ol l e c t o r C u r r e nt I
C
( A)
=–
–5
C o l l ec to r C u r r e n t I
C
( A)
–1. 2m A
–4
–4
–0.9mA
–3
–2
emp
–3
)
emp)
ase
T
–1
–1
I
C
= –2 A
–1
0
0
–1
–2
–3
–4
–5
–6
– 0 .6
– 0 . 5 –1
–10
Bas e C ur r en t I
B
( m A)
–100 –200
0
0
–1
B a s e - Em i t t o r Vo l t a g e V
BE
( V )
–30˚C
– 4A
25˚C
(C
– 6A
125˚
C (C
–2
(Case
–2
ase T
Temp
)
–2 – 2 .2
C o l l ect o r - Em i t t er V ol ta ge V
C E
(V )
(V
C E
= – 4 V )
8000
5000
D C Cu rr en t Ga i n h
FE
D C Cu rr en t Ga i n h
FE
( V
C E
= – 4V)
8000
5000
12
5˚C
˚C
25
Transient Thermal Resistance
θ
j -a
( ˚ C / W )
h
FE
– I
C
Characteristics
(Typical)
Typ
h
F E
– I
C
Temperature Characteristics
(Typical)
θ
j - a
– t Characteristics
5
1000
500
1000
500
–3
100
30
–0.03
0˚C
1
80
–0.03
–0. 1
–0.5
–1
–6
– 0. 1
– 0. 5
–1
–6
0.5
1
10
Time t(ms)
10 0
1 00 0
C ol l e ct or C ur ren t I
C
(A )
C ol l ec t or C ur r en t I
C
( A)
f
T
– I
E
Characteristics
(Typical)
(V
C E
=– 12 V )
120
–20
Safe Operating Area
(Single Pulse)
30
Pc – Ta Derating
Typ
100
–10
50
0
µ
Cu t-o ff Fre qu e n c y f
T
(M H
Z
)
–5
80
Co llec to r C u r r e n t I
C
( A)
DC
M a xi mu m Po we r D i s s i p at i o n P
C
(W )
Natural Cooling
Silicone Grease
Heatsink: Aluminum
in mm
20
10
0
µ
1m
s
10
m
s
s
s
W
ith
In
fin
60
–1
– 0 .5
Without Heatsink
Natural Cooling
– 0 .1
15 0 x 1 5 0 x 2
1 00 x 10 0 x 2
10
5 0 x 5 0x 2
ite
he
at
si
40
nk
20
W i th o u t H e a t s i n k
2
–5
– 10
– 50
–1 00
–2 0 0
0
0
0. 05
0.1
0.5
1
5 6
–0.05
–3
0
25
50
75
10 0
125
150
Em it t e r C urre nt I
E
( A)
Co ll e ct o r - Em i t t er Vo lt a ge V
C E
( V)
A m b i e n t T em p e r at u r e T a ( ˚ C )
40
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