Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
2. Pulse Test: Pulse Width
≤
300
ms,
D.C.
≤
2%.
250
V
CE(sat)
, COLLECTOR−EMITTER
SATURATION VOLTAGE (V)
P
D
, POWER DISSIPATION (mW)
0.30
I
C
/I
B
= 10
0.25
0.20
150°C
0.15
0.10
0.05
0
0
50
100
150
0.0001
0.001
0.01
0.1
1
T
A
, AMBIENT TEMPERATURE (°C)
I
C
, COLLECTOR CURRENT (A)
25°C
−55°C
200
150
100
50
0
−50
R
qJA
= 833°C/W
Figure 1. Derating Curve
450
V
BE(sat)
, BASE−EMITTER SATURA-
TION VOLTAGE (V)
150°C (10 V)
400
h
FE
, DC CURRENT GAIN
350
300
250
200
150
100
50
0
0.0001
0.001
0.01
0.1
1
I
C
, COLLECTOR CURRENT (A)
−55°C (10 V)
−55°C (2 V)
150°C (2 V)
25°C (10 V)
25°C (2 V)
0.95
0.85
Figure 2. Collector Emitter Saturation Voltage
vs. Collector Current
I
C
/I
B
= 10
−55°C
25°C
0.75
0.65
0.55
0.45
0.35
0.25
0.0001
0.001
0.01
0.1
1
I
C
, COLLECTOR CURRENT (A)
150°C
Figure 3. DC Current Gain vs. Collector
Current
Figure 4. Base Emitter Saturation Voltage vs.
Collector Current
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2
MSD1819A−RT1G, NSVMSD1819A−RT1G
V
BE(on)
, BASE−EMITTER TURN ON VOLTAGE (V)
1.0
0.9
−55°C
0.8
0.7
0.6
0.5
150°C
0.4
0.3
0.2
0.0001
0.001
0.01
0.1
1
I
C
, COLLECTOR CURRENT (A)
25°C
V
CE
, COLLECTOR−EMITTER VOLTAGE (V)
1.2
1 mA
1.0
10 mA
0.8
0.6
0.4
0.2
0
500
mA
0.000001
0.00001
0.0001
0.001
0.01
I
B
, BASE CURRENT (A)
50 mA
I
C
= 100 mA
T
A
= 25°C
Figure 5. Base Emitter Turn−On Voltage vs.
Collector Current
C
obo
, OUTPUT CAPACITANCE (pF)
18
17
16
15
14
13
12
11
10
9
8
7
0
1
2
3
4
5
6
V
eb
, EMITTER BASE VOLTAGE (V)
C
ibo
(pF)
6.0
5.5
5.0
4.5
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0
Figure 6. Collector Saturation Region
C
ibo
, INPUT CAPACITANCE (pF)
C
obo
(pF)
5
10
15
20
25
30
35
40
V
cb
, COLLECTOR BASE VOLTAGE (V)
Figure 7. Input Capacitance
Figure 8. Output Capacitance
1
I
C
, COLLECTOR CURRENT (A)
1.0 ms
100 ms
0.1
10 ms
1.0 s
0.01
1
10
V
CE
, COLLECTOR−EMITTER VOLTAGE (V)
100
Figure 9. Safe Operating Area
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3
MSD1819A−RT1G, NSVMSD1819A−RT1G
PACKAGE DIMENSIONS
SC−70 (SOT−323)
CASE 419−04
ISSUE N
D
e1
3
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
MILLIMETERS
NOM
MAX
0.90
1.00
0.05
0.10
0.70 REF
0.35
0.40
0.18
0.25
2.10
2.20
1.24
1.35
1.30
1.40
0.65 BSC
0.38
0.56
2.10
2.40
INCHES
NOM
0.035
0.002
0.028 REF
0.014
0.007
0.083
0.049
0.051
0.026 BSC
0.015
0.083
H
E
1
2
E
b
e
DIM
A
A1
A2
b
c
D
E
e
e1
L
H
E
MIN
0.80
0.00
0.30
0.10
1.80
1.15
1.20
0.20
2.00
MIN
0.032
0.000
0.012
0.004
0.071
0.045
0.047
0.008
0.079
MAX
0.040
0.004
0.016
0.010
0.087
0.053
0.055
0.022
0.095
A
0.05 (0.002)
A2
L
c
STYLE 3:
PIN 1. BASE
2. EMITTER
3. COLLECTOR
A1
SOLDERING FOOTPRINT*
0.65
0.025
0.65
0.025
1.9
0.075
0.9
0.035
0.7
0.028
SCALE 10:1
mm
inches
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
ON Semiconductor and
are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent
coverage may be accessed at
www.onsemi.com/site/pdf/Patent−Marking.pdf.
ON Semiconductor reserves the right to make changes without further notice to any products herein.
ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability
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Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards,
regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or
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