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BAT54W S1

Description
Diode configuration: Independent DC reverse withstand voltage (Vr): 30V Average rectified current (Io): 200mA Forward voltage drop (Vf): 800mV@100mA Reverse current (Ir): 2μA@25V
File Size256KB,3 Pages
ManufacturerCHINA BASE INTERNATIONAL
Download Datasheet Parametric View All

BAT54W S1 Overview

Diode configuration: Independent DC reverse withstand voltage (Vr): 30V Average rectified current (Io): 200mA Forward voltage drop (Vf): 800mV@100mA Reverse current (Ir): 2μA@25V

BAT54W S1 Parametric

Parameter NameAttribute value
Diode configurationDetached
DC reverse withstand voltage (Vr)30V
Average rectified current (Io)200mA
Forward voltage drop (Vf)800mV@100mA
Reverse current (Ir)2μA@25V
BAT54W
Features
SCHOTTKY BARRIER DIODE
PINNING
PIN
1
2
DESCRIPTION
Cathode
Anode
2
• Low forward voltage
Applications
• Ultra high-speed switching
• Voltage clamping
• Protection circuits
1
S1
Top View
Marking Code: "S1"
Simplified outline SOD-123 and symbol
Absolute Maximum Ratings
(T
a
= 25 C)
O
Parameter
Reverse Voltage
Forward Current
Repetitive Peak Forward Current
Peak Forward Surge Current (t
p
= 10 ms)
Power Dissipation
Thermal Resistance from Junction Ambient
Junction Temperature
Storage Temperature Range
Symbol
V
R
I
F
I
FRM
I
FSM
P
D
R
thJA
T
J
T
stg
Value
30
200
300
600
230
500
125
- 65 to + 150
Unit
V
mA
mA
mA
mW
K/W
O
C
C
O
Characteristics at
T
a
= 25 C
O
Parameter
Forward Voltage
at I
F
= 0.1 mA
at I
F
= 1 mA
at I
F
= 10 mA
at I
F
= 30 mA
at I
F
= 100 mA
Reverse Current
at V
R
= 25 V
Total Capacitance
at V
R
= 1 V, f = 1 MHz
Reverse Recovery Time
at I
F
= 10 mA, V
R
= 6 V, I
R
= 10 mA, R
L
= 100
Symbol
Max.
240
320
400
500
800
2
10
6
Unit
V
F
mV
I
R
C
T
t
rr
µA
pF
ns
Page 1 of 3
6/2/2011
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