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HSBB0012

Description
Type: N-channel drain-source voltage (Vdss): 100V Continuous drain current (Id): 20A Power (Pd): 21W On-resistance (RDS(on)@Vgs,Id): 105mΩ@10V, 5A Threshold voltage ( Vgs(th)@Id):2.5V@250μA
File Size525KB,5 Pages
ManufacturerHUASHUO
Download Datasheet Parametric View All

HSBB0012 Overview

Type: N-channel drain-source voltage (Vdss): 100V Continuous drain current (Id): 20A Power (Pd): 21W On-resistance (RDS(on)@Vgs,Id): 105mΩ@10V, 5A Threshold voltage ( Vgs(th)@Id):2.5V@250μA

HSBB0012 Parametric

Parameter NameAttribute value
typeN channel
Drain-source voltage (Vdss)100V
Continuous drain current (Id)20A
Power(Pd)21W
On-resistance (RDS(on)@Vgs,Id)105mΩ@10V,5A
Threshold voltage (Vgs(th)@Id)2.5V@250μA
HSBB0012
N-Ch 100V Fast Switching MOSFETs
Description
The HSBB0012 is new generation MOSFET
features low on-resistance and fast switching.
Making it ideal for high efficiency power
management applications.
The HSBB0012 meet the RoHS and Green
Product requirement, 100% EAS guaranteed
with full function reliability approved.
Product Summary
V
DS
R
DS(ON),TYP
I
D
100
93
20
V
A
Super Low Gate Charge
Green Device Available
Excellent Cdv/dt effect decline
Optimized for fast-switching application
PRPAK3*3 Pin Configuration
Absolute Maximum Ratings
Symbol
V
DS
V
GS
I
D
@T
C
=25℃
I
D
@T
C
=100℃
I
DM
EAS
P
D
@T
C
=25℃
P
D
@T
A
=25℃
T
STG
T
J
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current, V
GS
@ 10V
1
Continuous Drain Current, V
GS
@ 10V
1
Pulsed Drain Current
2
Single Pulse Avalanche Energy
3
Total Power Dissipation
3
Total Power Dissipation
3
Storage Temperature Range
Operating Junction Temperature Range
Rating
100
±20
20
14
80
1.8
21
1.8
-55 to 150
-55 to 150
Units
V
V
A
A
A
mJ
W
W
Thermal Data
Symbol
R
θJA
R
θJC
Parameter
Thermal Resistance Junction-ambient
1
Thermal Resistance Junction-Case
1
Typ.
---
---
Max.
65
6
Unit
℃/W
℃/W
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