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B5819W

Description
DC reverse withstand voltage (Vr): 40V Average rectified current (Io): 1A Forward voltage drop (Vf): 900mV@3A Reverse current (Ir): 1mA@40V
File Size2MB,2 Pages
ManufacturerFUXINSEMI
Download Datasheet Parametric View All

B5819W Overview

DC reverse withstand voltage (Vr): 40V Average rectified current (Io): 1A Forward voltage drop (Vf): 900mV@3A Reverse current (Ir): 1mA@40V

B5819W Parametric

Parameter NameAttribute value
Diode configuration-
DC reverse withstand voltage (Vr)40V
Average rectified current (Io)1A
Forward voltage drop (Vf)900mV@3A
Reverse current (Ir)1mA@40V
B5817W THRU B5819W
1.0
A Surface Mount Schottky Barrier
Rectifiers - 20V-
40V
Features
For use in low voltage, high frequency inverters
Free wheeling, and polarity protection applications
Package outline
SOD-123
Case:
JEDEC SOD-123 molded plastic body
Terminals:
Solder plated, solderable per MIL-STD-750,
Method 2026
Polarity:
Color band denotes cathode end
Mounting Position:
Any
0.110(2.80)
0.098(2.50)
0.026(0.65)
0.018(0.45)
Mechanical data
0.071(1.80)
0.055(1.40)
Marking
:
SL
Pb
e3
0.152(3.85)
0.140(3.55)
Dimensions in inches and (millimeters)
Maximum ratings and Electrical Characteristics
(AT
PARAMETER
Peak repetitive peak reverse voltage
Working peak
DC Blocking voltage
RMS Reverse voltage
Average rectified output current
Peak forward surge current @=8.3ms
Power dissipation
Thermal resistance junction to ambient
Operating junction temperature range
SYMBOLS
T
A
=25
o
C unless otherwise noted)
B5819W
40
28
UNITS
V
V
A
A
mW
K/W
B5817W
20
14
B5818W
30
21
1
9
250
500
-55 to +125
-55 to +150
V
RRM
V
RWM
V
R
V
R(RMS)
I
O
I
FSM
Pd
R
ΘJA
T
J
T
STG
V
RM
SYMBOLS
0.008(0.20)MAX
0.053(1.35)
0.037(0.95)
C
40
Test conditions
I
R
=1mA
V
R
=20V
B5817W
B5818W
B5819W
B5817W
B5818W
B5819W
B5817W
I
F
=1A
I
F
=3A
B5818W
B5819W
V
R
=4V,f=1.0MHz
V
Storage temperature
Non-Repetitive peak reverse voltage
PARAMETER
Reverse breakdown voltage
20
Min.
20
30
40
Max.
30
Unit
V
V
V
1
0.45
0.75
V
V
V
0.55
0.875
0.6
0.9
mA
V
R
=30V
V
R
=40V
V
(BR)
Reverse voltage leakage current
I
R
Forward voltage
V
F
Diode capacitance
C
D
120
pF
www.fuxinsemi.com
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