BAT60A...
Silicon Schottky Diode
•
High current rectifier Schottky diode with
extreme low
V
F
drop (typ. 0.12V at
I
F
= 10mA)
•
For power supply applications
•
For clamping and protection in low voltage
applications
•
For detection and step-up-conversion
•
Pb-free (RoHS compliant) package
1)
•
Qualified according AEC Q101
BAT60A
ESD
(Electrostatic
discharge)
sensitive device, observe handling precaution!
Type
BAT60A
Parameter
Diode reverse voltage
2)
Forward current
Non-repetitive peak surge forward current
(t
≤
10ms)
Total power dissipation
T
S
≤
28°C
Junction temperature
Operating temperature range
Storage temperature
1
Pb-containing
2
For
Package
SOD323
Configuration
single
Symbol
V
R
I
F
I
FSM
P
tot
T
j
T
op
T
stg
Value
10
3
5
1350
150
-55 ... 85
-55 ... 150
Marking
white/3
Unit
V
A
Maximum Ratings
at
T
A
= 25°C, unless otherwise specified
mW
°C
package may be available upon special request
T
A
> 25 °C the derating of
V
R
has to be considered. Please refer to curve Permissible reverse voltage.
1
2007-04-19
BAT60A...
Thermal Resistance
Parameter
Junction - soldering point
1)
Symbol
R
thJS
Value
≤
90
Unit
K/W
Electrical Characteristics
at
T
A
= 25°C, unless otherwise specified
Parameter
Symbol
Values
min.
typ. max.
DC Characteristics
Reverse current
2)
I
R
V
R
= 5 V
V
R
= 8 V
V
R
= 5 V,
T
A
= 80 °C
Forward voltage
2)
I
F
= 10 mA
I
F
= 100 mA
I
F
= 1000 mA
V
F
0.1
0.15
0.22
0.12
0.2
0.3
0.15
0.23
0.37
-
-
-
0.3
0.6
18
1
2.6
-
Unit
mA
V
AC Characteristics
Diode capacitance
V
R
= 5 V,
f
= 1 MHz
1
For
C
T
-
20
35
pF
calculation of
R
thJA
please refer to Application Note Thermal Resistance
test:
t
p
= 300 µs;
D
= 0.01
2
Pulsed
2
2007-04-19
BAT60A...
Reverse current
I
R
=
ƒ(V
R
)
T
A
= Parameter
10
-1
A
TA=85°C
Forward current
I
F
=
ƒ
(V
F
)
T
A
= Parameter
10
0
A
10
-2
10
-1
10
-3
I
R
TA=25°C
10
-2
I
F
10
-4
10
-3
10
-5
TA= -40°C
-40°C
25°C
85°C
125°C
10
-6
10
-4
10
-7
0
2
4
6
8
V
11
10
-5
0
0.1
0.2
0.3
0.4
0.5
0.6
V
0.8
V
R
V
F
Permissible Reverse voltage
V
R
=
ƒ
(T
A
)
t
p
= Parameter; duty cycle < 0.01
Device mounted on PCB with
R
th = 160 K/W
12
V
Forward current
I
F
=
ƒ
(T
S
)
3500
mA
10
9
2500
V
R
8
7
6
5
4
tp=300µs
I
F
2000
tp=100ms
1500
1000
3
2
1
0
0
20
40
60
80
100
120
°C
150
0
0
15
30
45
60
75
90 105 120
°C
150
DC
500
T
A
T
S
3
2007-04-19
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