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VS-19TQ015S-M3_15

Description
High Performance Schottky Rectifier, 19 A
File Size160KB,7 Pages
ManufacturerVishay
Websitehttp://www.vishay.com
Download Datasheet View All

VS-19TQ015S-M3_15 Overview

High Performance Schottky Rectifier, 19 A

VS-19TQ015S-M3
www.vishay.com
Vishay Semiconductors
High Performance Schottky Rectifier, 19 A
FEATURES
Base
cathode
2
• 125 °C T
J
operation (V
R
< 5 V)
• Optimized for OR-ing applications
• Ultralow forward voltage drop
• High frequency operation
• Guard ring for enhanced ruggedness and long
term reliability
TO-263AB (D
2
PAK)
1
N/C
3
Anode
• High purity, high temperature epoxy
encapsulation for enhanced mechanical strength and
moisture resistance
• Meets MSL level 1, per J-STD-020, LF maximum peak
of 260 °C
PRODUCT SUMMARY
Package
I
F(AV)
V
R
V
F
at I
F
I
RM
max.
T
J
max.
Diode variation
E
AS
TO-263AB
(D
2
PAK)
19 A
15 V
0.36 V
522 mA at 100 °C
125 °C
Single die
6.75 mJ
• Designed and qualified according to JEDEC
®
-JESD47
• Material categorization: for definitions of compliance
please see
www.vishay.com/doc?99912
DESCRIPTION
The VS-19TQ015S-M3 Schottky rectifier has been
optimized for ultralow forward voltage drop specifically for
the OR-ing of parallel power supplies. The proprietary
barrier technology allows for reliable operation up to 125 °C
junction temperature. Typical applications are in parallel
switching power supplies, converters, reverse battery
protection, and redundant power subsystems.
MAJOR RATINGS AND CHARACTERISTICS
SYMBOL
I
F(AV)
V
RRM
I
FSM
V
F
T
J
t
p
= 5 μs sine
19 A
pk
, T
J
= 75 °C
Range
CHARACTERISTICS
Rectangular waveform
VALUES
19
15
700
0.32
-55 to +125
UNITS
A
V
A
V
°C
VOLTAGE RATINGS
PARAMETER
Maximum DC reverse voltage
Maximum working peak reverse voltage
SYMBOL
V
R
V
RWM
VS-19TQ015S-M3
15
UNITS
V
ABSOLUTE MAXIMUM RATINGS
PARAMETER
Maximum average forward current
See fig. 5
Maximum peak one cycle
non-repetitive surge current
See fig. 7
Non-repetitive avalanche energy
Repetitive avalanche current
SYMBOL
I
F(AV)
TEST CONDITIONS
50 % duty cycle at T
C
= 80 °C, rectangular waveform
5 μs sine or 3 μs rect. pulse
I
FSM
10 ms sine or 6 ms rect. pulse
E
AS
I
AR
Following any rated
load condition and with
rated V
RRM
applied
VALUES
19
700
A
330
6.75
1.50
mJ
A
UNITS
A
T
J
= 25 °C, I
AS
= 1.50 A, L = 6 mH
Current decaying linearly to zero in 1 μs
Frequency limited by T
J
maximum V
A
= 3 x V
R
typical
Revision: 29-Jul-14
Document Number: 95730
1
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
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