JMnic
Product Specification
Silicon NPN Power Transistors
2SC2773
DESCRIPTION
・With
MT-200 package
・High
current capability
APPLICATIONS
・For
audio power amplifier and general
purpose applications
PINNING(see Fig.2)
PIN
1
2
3
Base
Collector;connected to
mounting base
Emitter
Fig.1 simplified outline (MT-200) and symbol
DESCRIPTION
・
Absolute maximum ratings(Ta=25
℃
)
SYMBOL
V
CBO
V
CEO
V
EBO
I
C
I
B
P
C
T
j
T
stg
PARAMETER
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Base current
Collectorl power dissipation
Junction temperature
Storage temperature
T
C
=25℃
CONDITIONS
Open emitter
Open base
Open collector
VALUE
200
200
6
15
5
150
150
-55~150
UNIT
V
V
V
A
A
W
℃
℃
JMnic
Product Specification
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
V
(BR)CEO
V
(BR)EBO
V
CEsat
I
CBO
I
EBO
h
FE
f
T
C
OB
PARAMETER
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector-emitter saturation voltage
Collector cut-off current
Emitter cut-off current
DC current gain
Transition frequency
Output capacitance
CONDITIONS
I
C
=50mA; I
B
=0
I
E
=1mA; I
C
=0
I
C
=10 A;I
B
=1 A
V
CB
=200V; I
E
=0
V
EB
=6V; I
C
=0
I
C
=5A ; V
CE
=4V
I
C
=0.5A ; V
CE
=12V
I
E
=0; V
CB
=10V;f=1MHz
50
20
MIN
200
6
2SC2773
TYP.
MAX
UNIT
V
V
3.0
100
100
180
V
μA
μA
MHz
pF
250
h
FE
classifications
O
50-100
P
70-140
Y
90-180
2
JMnic
Product Specification
Silicon NPN Power Transistors
PACKAGE OUTLINE
2SC2773
Fig.2 Outline dimensions
3
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