Dual N-Channel 30 V (D-S) MOSFETs with Schottky Diode
PRODUCT SUMMARY
V
DS
(V)
Channel-1
30
R
DS(on)
()
0.0093 at V
GS
= 10 V
0.0130 at V
GS
= 4.5 V
0.0047 at V
GS
= 10 V
0.0059 at V
GS
= 4.5 V
I
D
(A)
16
a
16
a
35
a
35
a
Q
g
(Typ.)
7.7 nC
FEATURES
•
Halogen-free According to IEC 61249-2-21
Definition
• SkyFET
®
Monolithic TrenchFET
®
Power MOSFETs and Schottky Diode
• 100 % R
g
and UIS Tested
•
Compliant to RoHS Directive 2002/95/EC
Channel-2
30
17 nC
APPLICATIONS
• System Power
- Notebook
- Server
• POL
• Synchronous Buck
Converter
D
1
PowerPAIR
®
6 x 3.7
Pin 1
1
2
D
1
G
2
6
S
2
5
S
1
/D
2
Pin 7
S
2
4
Ordering Information:
SiZ790DT-T1-GE3 (Lead (Pb)-free and Halogen-free)
6 mm
3
G
1
D
1
3.73 mm
D
1
G
1
N-Channel 1
MOSFET
S
1
/D
2
Schottky
Diode
G
2
N-Channel 2
MOSFET
S
2
ABSOLUTE MAXIMUM RATINGS
(T
A
= 25 °C, unless otherwise noted)
Parameter
Drain-Source Voltage
Gate-Source Voltage
T
C
= 25 °C
T
C
= 70 °C
T
A
= 25 °C
T
A
= 70 °C
T
C
= 25 °C
T
A
= 25 °C
L = 0.1 mH
T
C
= 25 °C
T
C
= 70 °C
T
A
= 25 °C
T
A
= 70 °C
Symbol
V
DS
V
GS
I
D
I
DM
I
S
I
AS
E
AS
P
D
T
J
, T
stg
Channel-1
30
± 20
16
a
16
a
12.9
b, c
10.3
b, c
70
16
a
3.2
b, c
16
13
27
17
3.9
b, c
2.5
b, c
- 55 to 150
260
35
a
35
a
23.4
b, c
18.7
b, c
100
35
a
3.8
b, c
30
45
48
31
4.6
b, c
3
b, c
Channel-2
Unit
V
Continuous Drain Current (T
J
= 150 °C)
Pulsed Drain Current (t = 300 µs)
Continuous Source Drain Diode Current
Single Pulse Avalanche Current
Single Pulse Avalanche Energy
A
mJ
Maximum Power Dissipation
W
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)
d, e
°C
THERMAL RESISTANCE RATINGS
Channel-1
Parameter
b, f
Channel-2
Typ.
Max.
Unit
24
32
20
27
Maximum Junction-to-Ambient
°C/W
Maximum Junction-to-Case (Drain)
Steady State
3.5
4.6
2
2.6
Notes:
a. Package limited.
b. Surface mounted on 1" x 1" FR4 board.
c. t = 10 s.
d. See solder profile (www.vishay.com/doc?73257). The PowerPAIR is a leadless package. The end of the lead terminal is exposed copper (not
plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not required
to ensure adequate bottom side solder interconnection.
e. Rework conditions: manual soldering with a soldering iron is not recommended for leadless components.
f. Maximum under steady state conditions is 67 °C/W for channel-1 and 65 °C/W for channel-2.
Document Number: 67669
S11-2380-Rev. B, 28-Nov-11
www.vishay.com
1
t
10 s
Symbol
R
thJA
R
thJC
Typ.
Max.
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
New Product
SiZ790DT
Vishay Siliconix
SPECIFICATIONS
(T
J
= 25 °C, unless otherwise noted)
Parameter
Static
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Gate Source Leakage
V
DS
V
GS(th)
I
GSS
V
GS
= 0 V, I
D
= 250 µA
V
GS
= 0 V, I
D
= 250 µA
V
DS
= V
GS
, I
D
= 250 µA
V
DS
= V
GS
, I
D
= 250 µA
V
DS
= 0 V, V
GS
= ± 20 V
V
DS
= 30 V, V
GS
= 0 V
Zero Gate Voltage Drain Current
I
DSS
V
DS
= 30 V, V
GS
= 0 V
V
DS
= 30 V, V
GS
= 0 V, T
J
= 55 °C
V
DS
= 30 V, V
GS
= 0 V, T
J
= 55 °C
On-State Drain Current
b
I
D(on)
V
DS
5
V, V
GS
= 10 V
V
DS
5
V, V
GS
= 10 V
V
GS
= 10 V, I
D
= 15 A
Drain-Source On-State Resistance
b
R
DS(on)
V
GS
= 10 V, I
D
= 20 A
V
GS
= 4.5 V, I
D
= 13 A
V
GS
= 4.5 V, I
D
= 20 A
Forward Transconductance
b
Dynamic
a
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
C
iss
C
oss
C
rss
Channel-2
V
DS
= 10 V, V
GS
= 0 V, f = 1 MHz
V
DS
= 15 V, V
GS
= 10 V, I
D
= 15 A
Total Gate Charge
Q
g
V
DS
= 15 V, V
GS
= 10 V, I
D
= 20 A
Channel-1
V
DS
= 15 V, V
GS
= 4.5 V, I
D
= 15 A
Gate-Source Charge
Gate-Drain Charge
Gate Resistance
Q
gs
Q
gd
R
g
Channel-2
V
DS
= 15 V, V
GS
= 4.5 V, I
D
= 20 A
f = 1 MHz
Ch-1
Channel-1
V
DS
= 15 V, V
GS
= 0 V, f = 1 MHz
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
0.2
0.2
830
1980
185
455
80
165
15.6
36
7.7
17
2.6
5.7
3
5
1
0.9
2
1.8
24
54
12
26
nC
pF
g
fs
V
DS
= 15 V, I
D
= 15 A
V
DS
= 15 V, I
D
= 20 A
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
15
20
0.0075 0.0093
0.0038 0.0047
0.0105 0.0130
0.0048 0.0059
48
85
S
140
50
30
30
1
1.1
2.2
2.2
± 100
± 100
1
200
5
1400
A
µA
nA
V
Symbol
Test Conditions
Min.
Typ.
Max.
Unit
Notes:
a. Guaranteed by design, not subject to production testing.
b. Pulse test; pulse width
300 µs, duty cycle
2 %.
www.vishay.com
2
Document Number: 67669
S11-2380-Rev. B, 28-Nov-11
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
New Product
SiZ790DT
Vishay Siliconix
SPECIFICATIONS
(T
J
= 25 °C, unless otherwise noted)
Parameter
Dynamic
a
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current
Pulse Diode Forward Current
Body Diode Voltage
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
Reverse Recovery Fall Time
Reverse Recovery Rise Time
a
Symbol
Test Conditions
Ch-1
Channel-1
V
DD
= 15 V, R
L
= 1.5
I
D
10 A, V
GEN
= 4.5 V, R
g
= 1
Channel-2
V
DD
= 15 V, R
L
= 1.5
I
D
10 A, V
GEN
= 4.5 V, R
g
= 1
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
Channel-1
V
DD
= 15 V, R
L
= 1.5
I
D
10 A, V
GEN
= 10 V, R
g
= 1
Channel-2
V
DD
= 15 V, R
L
= 1.5
I
D
10 A, V
GEN
= 10 V, R
g
= 1
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
I
S
= 10 A, V
GS
= 0 V
I
S
= 2 A, V
GS
= 0 V
Ch-1
Ch-2
Ch-1
Ch-2
Channel-1
I
F
= 10 A, dI/dt = 100 A/µs, T
J
= 25 °C
Channel-2
I
F
= 10 A, dI/dt = 100 A/µs, T
J
= 25 °C
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
Min.
Typ.
10
20
15
15
15
25
7
10
5
10
15
10
17
25
7
10
Max.
20
40
30
30
30
50
15
20
10
20
30
20
35
50
15
20
16
35
70
100
Unit
t
d(on)
t
r
t
d(off)
t
f
t
d(on)
t
r
t
d(off)
t
f
ns
I
S
I
SM
V
SD
t
rr
Q
rr
t
a
t
b
T
C
= 25 °C
A
0.8
0.38
15
20
6
15
9
10.5
6
9.5
1.2
0.48
30
40
12
32
V
ns
nC
ns
Notes:
a. Guaranteed by design, not subject to production testing.
b. Pulse test; pulse width
300 µs, duty cycle
2 %.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
Document Number: 67669
S11-2380-Rev. B, 28-Nov-11
www.vishay.com
3
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
New Product
SiZ790DT
Vishay Siliconix
CHANNEL-1 TYPICAL CHARACTERISTICS
(25 °C, unless otherwise noted)
70
60
50
40
30
20
10
0
0.0
0
0.5
1.0
1.5
2.0
0.0
0.5
1.0
1.5
2.0
V
DS
- Drain-to-Source Voltage (V)
T
C
= - 55
°C
2.5
3.0
V
GS
= 10 V thru 4 V
16
I
D
- Drain Current (A)
I
D
- Drain Current (A)
20
12
T
C
= 25
°C
8
V
GS
= 3 V
4
T
C
= 125
°C
V
GS
- Gate-to-Source Voltage (V)
Output Characteristics
0.014
1200
Transfer Characteristics
R
DS(on)
- On-Resistance (Ω)
0.012
C - Capacitance (pF)
V
GS
= 4.5 V
V
GS
= 10 V
0.008
1000
C
iss
800
0.010
600
400
C
oss
C
rss
0.006
200
0.004
0
10
20
30
40
50
60
70
0
0
5
10
15
20
25
30
I
D
- Drain Current (A)
V
DS
- Drain-to-Source Voltage (V)
On-Resistance vs. Drain Current
10
I
D
= 15.2 A
V
GS
- Gate-to-Source Voltage (V)
8
V
DS
= 7.5 V
R
DS(on)
- On-Resistance
(Normalized)
1.8
I
D
= 15 A
1.6
Capacitance
V
GS
= 10 V
1.4
V
GS
= 4.5 V
6
V
DS
= 15 V
4
V
DS
= 24 V
1.2
1.0
2
0.8
0
0
3
6
9
12
15
18
Q
g
- Total Gate Charge (nC)
0.6
- 50
- 25
0
25
50
75
100
125
150
T
J
- Junction Temperature (°C)
Gate Charge
On-Resistance vs. Junction Temperature
www.vishay.com
4
Document Number: 67669
S11-2380-Rev. B, 28-Nov-11
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
New Product
SiZ790DT
Vishay Siliconix
CHANNEL-1 TYPICAL CHARACTERISTICS
(25 °C, unless otherwise noted)
100
0.030
I
D
= 15 A
T
J
= 150
°C
10
R
DS(on)
- On-Resistance (Ω)
I
S
- Source Current (A)
0.025
0.020
0.015
T
J
= 125
°C
1
T
J
= 25
°C
0.010
T
J
= 25
°C
0.005
0.1
0.0
0.000
0.2
0.4
0.6
0.8
1.0
1.2
0
2
4
6
8
10
V
SD
- Source-to-Drain Voltage (V)
V
GS
- Gate-to-Source Voltage (V)
Source-Drain Diode Forward Voltage
2.0
50
On-Resistance vs. Gate-to-Source Voltage
1.8
40
1.6
Power (W)
I
D
= 250 μA
V
GS(th)
(V)
30
1.4
20
1.2
1.0
10
0.8
- 50
- 25
0
25
50
75
100
125
150
0
0.001
0.01
0.1
1
Time (s)
10
100
1000
T
J
- Temperature (°C)
Threshold Voltage
1000
Single Pulse Power
100
I
D
- Drain Current (A)
Limited by R
DS(on)
*
10
100 μs
1 ms
1
10 ms
100 ms
1s
10 s
DC
BVDSS Limited
0.1
T
A
= 25
°C
Single Pulse
0.01
0.1
1
10
100
V
DS
- Drain-to-Source Voltage (V)
* V
GS
> minimum V
GS
at which R
DS(on)
is specified
Safe Operating Area, Junction-to-Ambient
Document Number: 67669
S11-2380-Rev. B, 28-Nov-11
www.vishay.com
5
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
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