UNISONIC TECHNOLOGIES CO., LTD
4N70K-TA
4.0A, 700V N-CHANNEL
POWER MOSFET
DESCRIPTION
The UTC
4N70K-TA
is a high voltage power MOSFET and is
designed to have better characteristics, such as fast switching
time, low gate charge, low on-state resistance and high rugged
avalanche. This high speed switching power MOSFET is usually
used in power supplies, PWM motor controls, high efficient DC to
DC converters and bridge circuits.
Power MOSFET
FEATURES
* R
DS(ON)
< 3.5Ω @ V
GS
= 10 V, I
D
= 2 A
* Fast Switching Capability
* Avalanche Energy Specified
* Improved dv/dt Capability, High Ruggedness
SYMBOL
ORDERING INFORMATION
Package
TO-220F
TO-220F1
TO-220F2
TO-220F3
TO-251
TO-251S
TO-252
TO-252D
TO-262
Pin Assignment
1
2
3
G
D
S
G
D
S
G
D
S
G
D
S
G
D
S
G
D
S
G
D
S
G
D
S
G
D
S
Packing
Tube
Tube
Tube
Tube
Tube
Tube
Tape Reel
Tape Reel
Tube
Ordering Number
Lead Free
Halogen Free
4N70KL-TF3-T
4N70KG-TF3-T
4N70KL-TF1-T
4N70KG-TF1-T
4N70KL-TF2-T
4N70KG-TF2-T
4N70KL-TF3T-T
4N70KG-TF3T-T
4N70KL-TM3-T
4N70KG-TM3-T
4N70KL-TMS-T
4N70KG-TMS-T
4N70KL-TN3-R
4N70KG-TN3-R
4N70KL-TND-R
4N70KG-TND-R
4N70KL-T2Q-T
4N70KG-T2Q-T
Note: Pin Assignment: G: Gate
D: Drain
S: Source
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QW-R205-040.B
4N70K-TA
MARKING
Power MOSFET
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QW-R205-040.B
4N70K-TA
ABSOLUTE MAXIMUM RATINGS
(T
A
= 25°С, unless otherwise specified)
Power MOSFET
PARAMETER
SYMBOL
RATINGS
UNIT
Drain-Source Voltage
V
DSS
700
V
Gate-Source Voltage
V
GSS
±30
V
Avalanche Current (Note 2)
I
AR
4.0
A
Continuous
I
D
4.0
A
Drain Current
17.6
A
Pulsed (Note 2)
I
DM
Single Pulsed (Note 3)
E
AS
216
mJ
Avalanche Energy
10.6
mJ
Repetitive (Note 2)
E
AR
TO-220F/TO-220F1/
36
W
TO-220F2/TO-220F3
Power Dissipation
P
D
TO-251/TO-251S
49
W
TO-252/TO-252D
TO-262
106
W
Peak Diode Recovery dv/dt (Note 4)
dv/dt
4.5
V/ns
Junction Temperature
T
J
+150
°С
Operating Temperature
T
OPR
-55 ~ +150
°С
Storage Temperature
T
STG
-55 ~ +150
°С
Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2. Repetitive Rating : Pulse width limited by maximum junction temperature
3. L = 27mH, I
AS
= 4 A, V
DD
= 50V, R
G
= 25
Ω,
Starting T
J
= 25°C
4. I
SD
≤
4.0A, di/dt
≤200A/μs,
V
DD
≤
BV
DSS
, Starting T
J
= 25°C
THERMAL DATA
SYMBOL
RATINGS
62.5
θ
JA
110
3.47
θ
JC
3.28
2.55
1.18
°C/W
°C/W
°C/W
°C/W
°C/W
UNIT
°C/W
PARAMETER
TO-220F/TO-220F1/
TO-220F2/TO-220F3
TO-262
Junction to Ambient
TO-251/TO-251S
TO-252/TO-252D
TO-220F/TO-220F1
TO-220F3
TO-220F2
Junction to Case
TO-251/TO-251S
TO-252/TO-252D
TO-262
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QW-R205-040.B
4N70K-TA
ELECTRICAL CHARACTERISTICS
(T
A
=25°С, unless otherwise specified)
SYMBOL
BV
DSS
I
DSS
TEST CONDITIONS
PARAMETER
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
Drain-Source Leakage Current
Power MOSFET
MIN TYP MAX UNIT
V
μA
nA
V/°С
V
Ω
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
V
A
A
V
GS
= 0 V, I
D
= 250
μA
700
V
DS
= 700 V, V
GS
= 0 V
10
Forward
V
GS
= 30 V, V
DS
= 0 V
100
Gate-Source Leakage Current
I
GSS
-100
Reverse
V
GS
= -30 V, V
DS
= 0 V
Breakdown Voltage Temperature Coefficient
△
BV
DSS
/△T
J
I
D
= 250μA, Referenced to 25°C
0.6
ON CHARACTERISTICS
Gate Threshold Voltage
V
GS(TH)
V
DS
= V
GS
, I
D
= 250
μA
2.0
4.0
Static Drain-Source On-State Resistance
R
DS(ON)
V
GS
= 10 V, I
D
= 2 A
3.5
DYNAMIC CHARACTERISTICS
Input Capacitance
C
ISS
660 760
V
DS
= 25 V, V
GS
= 0 V,
Output Capacitance
C
OSS
48 90
f = 1MHz
5
11
Reverse Transfer Capacitance
C
RSS
SWITCHING CHARACTERISTICS
Turn-On Delay Time
t
D(ON)
45
V
DD
= 30V, I
D
= 0.5A,
Turn-On Rise Time
t
R
32
R
G
= 25Ω (Note 1, 2)
Turn-Off Delay Time
t
D(OFF)
80
Turn-Off Fall Time
t
F
24
Total Gate Charge
Q
G
37
V
DS
= 50V, I
D
= 1.3A,
Gate-Source Charge
Q
GS
4.8
V
GS
= 10 V (Note 1, 2)
6.0
Gate-Drain Charge
Q
GD
SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS
Drain-Source Diode Forward Voltage
V
SD
V
GS
= 0 V, I
S
= 4.0 A
1.4
Maximum Continuous Drain-Source Diode
I
S
4.0
Forward Current
Maximum Pulsed Drain-Source Diode
I
SM
17.6
Forward Current
Notes: 1. Pulse Test: Pulse width
≤
300µs, Duty cycle
≤
2%
2. Essentially independent of operating temperature
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QW-R205-040.B
4N70K-TA
TEST CIRCUITS AND WAVEFORMS
Power MOSFET
Peak Diode Recovery dv/dt Test Circuit
V
GS
(Driver)
Period
P.W.
D=
P. W.
Period
V
GS
= 10V
I
FM
, Body Diode Forward Current
I
SD
(D.U.T.)
I
RM
Body Diode Reverse Current
di/dt
Body Diode Recovery dv/dt
V
DS
(D.U.T.)
V
DD
Body Diode
Forward Voltage Drop
Peak Diode Recovery dv/dt Waveforms
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www.unisonic.com.tw
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QW-R205-040.B
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