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30N06-Q

Description
N-CHANNEL POWER MOSFET
File Size346KB,8 Pages
ManufacturerUNISONIC TECHNOLOGIES CO.,LTD
Websitehttp://www.unisonic.com.tw/
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30N06-Q Overview

N-CHANNEL POWER MOSFET

UNISONIC TECHNOLOGIES CO., LTD
30N06-Q
60V, 30A N-CHANNEL
POWER MOSFET
DESCRIPTION
1
TO-220F1
1
TO-220F2
1
TO-220
Power MOSFET
1
TO-220F
The UTC
30N06-Q
is a low voltage power MOSFET and is
designed to have better characteristics, such as fast switching time,
low gate charge, low on-state resistance and excellent avalanche
characteristics. This power MOSFET is usually used at automotive
applications in power supplies, high efficient DC to DC converters
and battery operated products.
FEATURES
1
TO-251
1
TO- 252
* R
DS(ON)
= 40mΩ@V
GS
= 10 V, I
D
=15A
* Ultra low gate charge ( typical 20nC )
* Low reverse transfer Capacitance ( C
RSS
= typical 80 pF )
* Fast switching capability
* Avalanche energy specified
* Improved dv/dt capability
SYMBOL
ORDERING INFORMATION
Pin Assignment
1
2
3
G
D
S
G
D
S
G
D
S
G
D
S
G
D
S
G
D
S
G
D
S
Packing
Tube
Tube
Tube
Tube
Tube
Tube
Tape Reel
Ordering Number
Package
Lead Free
Halogen Free
30N06L-TA3-T
30N06G-TA3-T
TO-220
30N06L-TF1-T
30N06G-TF1-T
TO-220F1
30N06L-TF2-T
30N06G-TF2-T
TO-220F2
30N06L-TF3-T
30N06G-TF3-T
TO-220F
30N06L-TM3-T
30N06G-TM3-T
TO-251
30N06L-TN3-T
30N06G-TN3-T
TO-252
30N06L-TN3-R
30N06G-TN3-R
TO-252
Note: Pin Assignment: G: Gate D: Drain S: Source
www.unisonic.com.tw
Copyright © 2013 Unisonic Technologies Co., Ltd
1 of 8
QW-R502-979. A

30N06-Q Related Products

30N06-Q 30N06G-TA3-T 30N06G-TF1-T 30N06G-TF2-T
Description N-CHANNEL POWER MOSFET N-CHANNEL POWER MOSFET N-CHANNEL POWER MOSFET N-CHANNEL POWER MOSFET
Is it Rohs certified? - incompatible conform to conform to
Maker - UNISONIC TECHNOLOGIES CO.,LTD UNISONIC TECHNOLOGIES CO.,LTD UNISONIC TECHNOLOGIES CO.,LTD
package instruction - FLANGE MOUNT, R-PSFM-T3 FLANGE MOUNT, R-PSFM-T3 FLANGE MOUNT, R-PSFM-T3
Reach Compliance Code - compli compli compli
Avalanche Energy Efficiency Rating (Eas) - 300 mJ 300 mJ 300 mJ
Configuration - SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage - 60 V 60 V 60 V
Maximum drain current (Abs) (ID) - 30 A 30 A 30 A
Maximum drain current (ID) - 30 A 30 A 30 A
Maximum drain-source on-resistance - 0.04 Ω 0.04 Ω 0.04 Ω
FET technology - METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR
JEDEC-95 code - TO-220AB TO-220AB TO-220AB
JESD-30 code - R-PSFM-T3 R-PSFM-T3 R-PSFM-T3
Number of components - 1 1 1
Number of terminals - 3 3 3
Operating mode - ENHANCEMENT MODE ENHANCEMENT MODE ENHANCEMENT MODE
Maximum operating temperature - 150 °C 150 °C 150 °C
Package body material - PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY
Package shape - RECTANGULAR RECTANGULAR RECTANGULAR
Package form - FLANGE MOUNT FLANGE MOUNT FLANGE MOUNT
Polarity/channel type - N-CHANNEL N-CHANNEL N-CHANNEL
Maximum power dissipation(Abs) - 79 W 45 W 45 W
Maximum pulsed drain current (IDM) - 120 A 120 A 120 A
surface mount - NO NO NO
Terminal form - THROUGH-HOLE THROUGH-HOLE THROUGH-HOLE
Terminal location - SINGLE SINGLE SINGLE
transistor applications - SWITCHING SWITCHING SWITCHING
Transistor component materials - SILICON SILICON SILICON
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