UNISONIC TECHNOLOGIES CO., LTD
30N06-Q
60V, 30A N-CHANNEL
POWER MOSFET
DESCRIPTION
1
TO-220F1
1
TO-220F2
1
TO-220
Power MOSFET
1
TO-220F
The UTC
30N06-Q
is a low voltage power MOSFET and is
designed to have better characteristics, such as fast switching time,
low gate charge, low on-state resistance and excellent avalanche
characteristics. This power MOSFET is usually used at automotive
applications in power supplies, high efficient DC to DC converters
and battery operated products.
FEATURES
1
TO-251
1
TO- 252
* R
DS(ON)
= 40mΩ@V
GS
= 10 V, I
D
=15A
* Ultra low gate charge ( typical 20nC )
* Low reverse transfer Capacitance ( C
RSS
= typical 80 pF )
* Fast switching capability
* Avalanche energy specified
* Improved dv/dt capability
SYMBOL
ORDERING INFORMATION
Pin Assignment
1
2
3
G
D
S
G
D
S
G
D
S
G
D
S
G
D
S
G
D
S
G
D
S
Packing
Tube
Tube
Tube
Tube
Tube
Tube
Tape Reel
Ordering Number
Package
Lead Free
Halogen Free
30N06L-TA3-T
30N06G-TA3-T
TO-220
30N06L-TF1-T
30N06G-TF1-T
TO-220F1
30N06L-TF2-T
30N06G-TF2-T
TO-220F2
30N06L-TF3-T
30N06G-TF3-T
TO-220F
30N06L-TM3-T
30N06G-TM3-T
TO-251
30N06L-TN3-T
30N06G-TN3-T
TO-252
30N06L-TN3-R
30N06G-TN3-R
TO-252
Note: Pin Assignment: G: Gate D: Drain S: Source
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Copyright © 2013 Unisonic Technologies Co., Ltd
1 of 8
QW-R502-979. A
30N06-Q
ABSOLUTE MAXIMUM RATINGS
(T
C
= 25°C, unless otherwise specified)
Power MOSFET
PARAMETER
SYMBOL
RATINGS
UNIT
Drain-Source Voltage
V
DSS
60
V
Gate to Source Voltage
V
GSS
±20
V
T
C
= 25°C
30
A
Continuous Drain Current
I
D
T
C
= 100°C
21.3
A
Pulsed Drain Current (Note 2)
I
DM
120
A
250
mJ
Single Pulsed (Note 3)
E
AS
Avalanche Energy
Repetitive (Note 2)
E
AR
8
mJ
TO-220
79
TO-220F/ TO-220F2
45
Power Dissipation
P
D
W
TO-220F1
TO-251/TO-252
46
Junction Temperature
T
J
+150
°C
Operation Temperature
T
OPR
-55 ~ +150
°C
Storage Temperature
T
STG
-55 ~ +150
°C
Note: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2. Repeativity rating: pulse width limited by junction temperature
3. L=0.66mH, I
AS
=30A, V
DD
=25V, R
G
=20Ω, Starting T
J
=25°C
THERMAL DATA
SYMBOL
θ
JA
RATING
62
62.5
110
1.9
θ
JC
2.7
2.85
°C/W
UNIT
°C/W
PARAMETER
TO-220
TO-220F/ TO-220F2
Junction to Ambient
TO-220F1
TO-251/TO-252
TO-220
TO-220F/ TO-220F2
Junction to Case
TO-220F1
TO-251/TO-252
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QW-R502-979. A
30N06-Q
ELECTRICAL CHARACTERISTICS
(T
C
= 25°C, unless otherwise specified)
SYMBOL
BV
DSS
I
DSS
TEST CONDITIONS
PARAMETER
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
Drain-Source Leakage Current
Power MOSFET
MIN TYP MAX UNIT
V
GS
= 0 V, I
D
= 250
μA
60
V
V
DS
= 60 V, V
GS
= 0 V
10
μA
100 nA
Forward
V
GS
= 20V, V
DS
= 0 V
Gate-Source Leakage Current
I
GSS
Reverse
V
GS
= -20V, V
DS
= 0 V
-100 nA
I
D
=250μA,
0.06
V/°C
Breakdown Voltage Temperature Coefficient
△
BV
DSS
/△T
J
Referenced to 25°C
ON CHARACTERISTICS
Gate Threshold Voltage
V
GS(TH)
V
DS
= V
GS
, I
D
= 250
μA
2.0
4.0
V
Static Drain-Source On-State Resistance
R
DS(ON)
V
GS
= 10 V, I
D
= 15 A
26
40
mΩ
DYNAMIC CHARACTERISTICS
900
pF
Input Capacitance
C
ISS
V
GS
= 0 V, V
DS
= 25 V,
Output Capacitance
C
OSS
250
pF
f = 1MHz
Reverse Transfer Capacitance
C
RSS
85
pF
SWITCHING CHARACTERISTICS
Turn-On Delay Time
t
D(ON)
50
ns
Turn-On Rise Time
t
R
100
ns
V
DD
= 30V, I
D
=15 A, V
GS
=10V
(Note 1, 2)
Turn-Off Delay Time
t
D(OFF)
160
ns
Turn-Off Fall Time
t
F
100
ns
Total Gate Charge
Q
G
20
30
nC
V
DS
= 60V, V
GS
= 10 V,
Gate-Source Charge
Q
GS
6
nC
I
D
= 24A (Note 1, 2)
Gate-Drain Charge
Q
GD
9
nC
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS
Drain-Source Diode Forward Voltage
V
SD
V
GS
= 0 V, I
S
= 30A
1.4
V
Maximum Continuous Drain-Source Diode
I
S
30
A
Forward Current
Maximum Pulsed Drain-Source Diode
I
SM
120
A
Forward Current
Notes: 1. Pulse Test : Pulse width
≤300μs,
Duty cycle
≤
2%
2. Essentially independent of operating temperature.
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3 of 8
QW-R502-979. A
30N06-Q
TEST CIRCUITS AND WAVEFORMS
Power MOSFET
D.U.T.
+
V
DS
-
+
-
L
R
G
Driver
V
GS
Same Type
as D.U.T.
* dv/dt controlled by R
G
* I
SD
controlled by pulse period
* D.U.T.-Device Under Test
V
DD
V
GS
(Driver)
P.W.
Period
D=
P. W.
Period
V
GS
= 10V
I
FM
, Body Diode Forward Current
I
SD
(D.U.T.)
I
RM
Body Diode Reverse Current
di/dt
Body Diode Recovery dv/dt
V
DS
(D.U.T.)
V
DD
Body Diode
Forward Voltage Drop
Peak Diode Recovery dv/dt Waveforms
UNISONIC TECHNOLOGIES CO., LTD
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QW-R502-979. A
30N06-Q
TEST CIRCUITS AND WAVEFORMS (Cont.)
Power MOSFET
Switching Test Circuit
Switching Waveforms
12V
50kΩ
0.2μF
0.3μF
Same Type
as D.U.T.
10V
V
DS
Q
GS
Q
G
Q
GD
V
GS
DUT
1mA
V
G
Charge
Gate Charge Test Circuit
Gate Charge Waveform
Unclamped Inductive Switching Test Circuit
Unclamped Inductive Switching Waveforms
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www.unisonic.com.tw
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QW-R502-979. A
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