UNISONIC TECHNOLOGIES CO., LTD
3N60K-MK
Preliminary
Power MOSFET
3A, 600V N-CHANNEL
POWER MOSFET
DESCRIPTION
The UTC
3N60K-MK
is a high voltage and high current power
MOSFET , designed to have better characteristics, such as fast
switching time, low gate charge, low on-state resistance and have
a high rugged avalanche characteristics. This power MOSFET is
usually used at high speed switching applications in power
supplies, PWM motor controls, high efficient DC to DC converters
and bridge circuits.
FEATURES
* R
DS(ON)
< 3.6Ω @ V
GS
= 10 V, I
D
= 1.5A
* Fast switching capability
* Avalanche energy specified
* Improved dv/dt capability, high ruggedness
SYMBOL
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QW-R205-010.b
3N60K-MK
ORDERING INFORMATION
Preliminary
Power MOSFET
Ordering Number
Lead Free
Halogen Free
3N60KL-TA3-T
3N60KG-TA3-T
3N60KL-TF3-T
3N60KG-TF3-T
3N60KL-TF1-T
3N60KG-TF1-T
3N60KL-TF2-T
3N60KG-TF2-T
3N60KL-TF3-T
3N60KG-TF3-T
3N60KL-TM3-T
3N60KG-TM3-T
3N60KL-TMS-T
3N60KG-TMS-T
3N60KL-TMS2-T
3N60KG-TMS2-T
3N60KL-TMS4-T
3N60KG-TMS4-T
3N60KL-TN3-R
3N60KG-TN3-R
3N60KL-TND-R
3N60KG-TND-R
Note: Pin Assignment: G: Gate
D: Drain
S: Source
Package
TO-220
TO-220F
TO-220F1
TO-220F2
TO-220F3
TO-251
TO-251S
TO-251S2
TO-251S4
TO-252
TO-252D
Pin Assignment
1
2
3
G
D
S
G
D
S
G
D
S
G
D
S
G
D
S
G
D
S
G
D
S
G
D
S
G
D
S
G
D
S
G
D
S
Packing
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Tape Reel
Tape Reel
MARKING
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2 of 7
QW-R205-010.b
3N60K-MK
Preliminary
Power MOSFET
ABSOLUTE MAXIMUM RATINGS
(T
C
= 25°C, unless otherwise specified)
PARAMETER
SYMBOL
RATINGS
UNIT
Drain-Source Voltage
V
DSS
600
V
Gate-Source Voltage
V
GSS
±30
V
Avalanche Current (Note 2)
I
AR
3.0
A
Continuous Drain Current
I
D
3.0
A
Pulsed Drain Current (Note 2)
I
DM
12
A
Single Pulsed (Note
E
AS
150
mJ
3)
Avalanche Energy
Repetitive (Note 2)
E
AR
7.5
mJ
Peak Diode Recovery dv/dt (Note 4)
dv/dt
4.5
V/ns
TO-220
75
W
TO-220F/TO-220F1
34
W
TO-220F3
Power Dissipation
P
D
TO-220F2
35
W
TO-251/TO-251S
TO-251S2/TO-251S4
50
W
TO-252/TO-252D
TO-220
0.6
W/°C
TO-220F/TO-220F1
0.27
W/°C
TO-220F3
Derate above 25°C
P
D
TO-220F2
0.28
W/°C
TO-251/TO-251S
TO-251S2/TO-251S4
0.4
W/°C
TO-252/TO-252D
35
W
Power Dissipation
P
D
Derate above 25°C
0.28
W/°C
Junction Temperature
T
J
+150
°C
Operating Temperature
T
OPR
-55 ~ +150
°C
Storage Temperature
T
STG
-55 ~ +150
°C
Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2. Repetitive Rating : Pulse width limited by T
J
.
3. L=33mH, I
AS
=3A, V
DD
=50V, R
G
=25
Ω,
Starting T
J
= 25°C
4. I
SD
≤3.0A,
di/dt
≤200A/μs,
V
DD
≤BV
DSS
, Starting T
J
= 25°C
THERMAL DATA
SYMBOL
RATING
62.5
θ
JA
110
1.67
3.68
θ
JC
3.58
2.5
°C/W
°C/W
UNIT
PARAMETER
TO-220/TO-220F
TO-220F1/TO-220F2
TO-220F3
Junction to Ambient
TO-251/TO-251S
TO-251S2/TO-251S4
TO-252/TO-252D
TO-220
TO-220F/TO-220F1
TO-220F3
Junction to Case
TO-220F2
TO-251/TO-251S
TO-251S2/TO-251S4
TO-252/TO-252D
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QW-R205-010.b
3N60K-MK
PARAMETER
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
Drain-Source Leakage Current
Preliminary
Power MOSFET
ELECTRICAL CHARACTERISTICS
(T
C
=25°C, unless otherwise specified)
SYMBOL
BV
DSS
I
DSS
TEST CONDITIONS
MIN TYP MAX UNIT
600
10
100
-100
0.6
2.5
4.5
3.6
460 560
41
60
5.88 12
43
16
96
17
14
4.4
1.4
V
μA
nA
nA
V/°C
V
Ω
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
V
A
A
V
GS
= 0 V, I
D
= 250
μA
V
DS
= 600 V, V
GS
= 0 V
Forward
V
GS
= 30 V, V
DS
= 0 V
Gate-Source Leakage Current
I
GSS
Reverse
V
GS
= -30 V, V
DS
= 0 V
Breakdown Voltage Temperature
I = 250
μA,
△
BV
DSS
/△T
J D
Coefficient
Referenced to 25°C
ON CHARACTERISTICS
Gate Threshold Voltage
V
GS(TH)
V
DS
= V
GS
, I
D
= 250
μA
Static Drain-Source On-State Resistance
R
DS(ON)
V
GS
= 10 V, I
D
= 1.5A
DYNAMIC CHARACTERISTICS
Input Capacitance
C
ISS
V
DS
= 25 V, V
GS
= 0 V,
Output Capacitance
C
OSS
f = 1MHz
Reverse Transfer Capacitance
C
RSS
SWITCHING CHARACTERISTICS
Turn-On Delay Time
t
D(ON)
Turn-On Rise Time
t
R
V
DD
= 30V, I
D
= 0.5 A, R
G
= 25Ω
(Note 1, 2)
Turn-Off Delay Time
t
D(OFF)
Turn-Off Fall Time
t
F
Total Gate Charge
Q
G
V
DS
= 50V, I
D
= 1.3A, V
GS
= 10 V
Gate-Source Charge
Q
GS
(Note 1, 2)
Gate-Drain Charge
Q
GD
SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS
Drain-Source Diode Forward Voltage
V
SD
V
GS
= 0 V, I
S
= 3.0 A
Maximum Continuous Drain-Source Diode
I
S
Forward Current
Maximum Pulsed Drain-Source Diode
I
SM
Forward Current
Notes: 1. Pulse Test: Pulse width
≤
300μs, Duty cycle≤2%
2. Essentially independent of operating temperature
18
1.4
3.0
12
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4 of 7
QW-R205-010.b
3N60K-MK
Preliminary
Power MOSFET
TEST CIRCUITS AND WAVEFORMS
D.U.T.
+
V
DS
-
+
-
L
R
G
Driver
V
GS
Same Type
as D.U.T.
* dv/dt controlled by R
G
* I
SD
controlled by pulse period
* D.U.T.-Device Under Test
V
DD
V
GS
(Driver)
P.W.
Period
D=
P. W.
Period
V
GS
= 10V
I
FM
, Body Diode Forward Current
I
SD
(D.U.T.)
I
RM
Body Diode Reverse Current
di/dt
Body Diode Recovery dv/dt
V
DS
(D.U.T.)
V
DD
Body Diode
Forward Voltage Drop
Peak Diode Recovery dv/dt Waveforms
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www.unisonic.com.tw
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QW-R205-010.b
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