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3N65KG-TMS4-T

Description
N-CHANNEL INSULATED GATE BIPOLAR TRANSISTOR
File Size240KB,7 Pages
ManufacturerUNISONIC TECHNOLOGIES CO.,LTD
Websitehttp://www.unisonic.com.tw/
Download Datasheet View All

3N65KG-TMS4-T Overview

N-CHANNEL INSULATED GATE BIPOLAR TRANSISTOR

UNISONIC TECHNOLOGIES CO., LTD
3N65K-MK
Preliminary
Power MOSFET
3A, 650V N-CHANNEL
POWER MOSFET
DESCRIPTION
The UTC
3N65K-MK
is a high voltage and high current power
MOSFET designed to have better characteristics, such as fast
switching time, low gate charge, low on-state resistance and high
rugged avalanche characteristics. This power MOSFET is usually
used in high speed switching applications at power supplies, PWM
motor controls, high efficient DC to DC converters and bridge
circuits.
FEATURES
* R
DS(ON)
< 4.0Ω @ V
GS
= 10V, I
D
= 1.5A
* Fast switching capability
* Avalanche energy specified
* Improved dv/dt capability, high ruggedness
SYMBOL
www.unisonic.com.tw
Copyright © 2014 Unisonic Technologies Co., Ltd
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