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8P004SRA0400I15

Description
SRAM Card, 2MX16, 150ns, CMOS, CADR1-68
Categorystorage    storage   
File Size112KB,10 Pages
ManufacturerMicrosemi
Websitehttps://www.microsemi.com
Download Datasheet Parametric View All

8P004SRA0400I15 Overview

SRAM Card, 2MX16, 150ns, CMOS, CADR1-68

8P004SRA0400I15 Parametric

Parameter NameAttribute value
Is it Rohs certified?incompatible
package instructionCADR1-68
Reach Compliance Codeunknown
Maximum access time150 ns
Spare memory width8
JESD-30 codeX-XXMA-X68
memory density33554432 bit
Memory IC TypeSRAM CARD
memory width16
Number of functions1
Number of terminals68
word count2097152 words
character code2000000
Operating modeASYNCHRONOUS
Maximum operating temperature85 °C
Minimum operating temperature-40 °C
organize2MX16
Package body materialUNSPECIFIED
Package shapeUNSPECIFIED
Package formMICROELECTRONIC ASSEMBLY
Parallel/SerialPARALLEL
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Certification statusNot Qualified
Nominal supply voltage (Vsup)5 V
surface mountNO
technologyCMOS
Temperature levelINDUSTRIAL
Terminal formUNSPECIFIED
Terminal locationUNSPECIFIED
Maximum time at peak reflow temperatureNOT SPECIFIED
PCMCIA SRAM Memory Card
SRA Series
SRAM Memory Card
General Description
The WEDC SRAM Series (SRA) memory cards offer a
high performance nonvolatile storage solution for code
and data storage, disk caching, and write intensive
mobile and embedded applications.
Packaged in PCMCIA type I or type II housing (type II
for cards with extended battery backup time), the
WEDC SRAM SRA series is based on 1 or 4Mbit
SRAM memories, providing densities from 256
Kilobytes to 8 Megabytes.
The SRA series of SRAM memory cards requires a 5V
power supply and operates at speeds to 150ns. The
cards are based on advanced CMOS technology
providing very low power and reliable data retention
characteristics. WEDC’s SRAM cards contain a
rechargeable lithium battery and recharge circuitry,
eliminating the need for replaceable batteries found in
many SRAM cards.
WEDC’s standard cards are shipped with WEDC’s
SRAM Logo. Cards are also available with blank
housings (no Logo). The blank housings are available
in both a recessed (for label) and flat housing. Please
contact WEDC sales representative for further
information on Custom artwork.
256KB through 8MB
Features
High Performance SRAM memory Card
• Single 5 Volt Supply
- (3.3V/5V operation is available as an option)
• Fast Access times: 150ns
• x8/x16 PCMCIA standard interface
• Low Power CMOS technology provides very low
power and reliable data retention characteristics
- standby current < 100µA typical
• Rechargeable Lithium battery with recharge circuitry
- eliminates the need for replaceable batteries
- standby current during recharge typically < 2mA
- battery backup time
•7 months - type I card
•18 months - type II card
typical based on 4MB (lower densities will
have greater storage times)
• Unlimited write cycles, no endurance issues
• Optional Features:
• 2KB EEPROM attribute memory containing
CIS
• Optional Hardware Write Protect switch
• PC Card Standard Type I or Type II Form Factor
Block Diagram
4MB SRAM Card Shown
[A1..A19]
address
buffer
SRAM
512K x 8
[A20..A22]
/CSHi
+ + + + +
CE1#
CE2#
WE#
OE#
REG#
A0
decoder
and
control
logic
/CSLi
/CS-A
/RD
/RD
/WR
/WR
CTRL
SRAM
512K x 8
SRAM
512K x 8
SRAM
512K x 8
SRAM
512K x 8
SRAM
512K x 8
SRAM
512K x 8
SRAM
512K x 8
/CSHi
[A1..A11]
S1
WP
Write Prot
Switch
VS1
VS2
GND
NC
NC
Vcc
/CS-A
/RD
/WR
ATTRIBUTE
MEMORY
CTRL
I/O BUFFER
[DO..D7]
[DO..D7]
[D8..D15]
+
BVD1
BVD2
Vcc
[D8..D15]
Power Management
and
Battery Control
Notes:
to internal
power
supply
1. pull down resistor (min 100k)
+
2. pull up resistor (min 10k)
Lithium Bat.
February 2002 Rev. 6
1
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