15N40_15 datasheet, PDF - EEWORLD Datasheet

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15N40_15: DescriptionN-CHANNEL POWER MOSFET; File Size214KB，6 Pages; ManufacturerUNISONIC TECHNOLOGIES CO.,LTD; Websitehttp://www.unisonic.com.tw/

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15N40_15 Overview

N-CHANNEL POWER MOSFET

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UNISONIC TECHNOLOGIES CO., LTD

15N40

Preliminary

Power MOSFET

15A, 400V N-CHANNEL

POWER MOSFET

DESCRIPTION

The UTC

15N40

is an N-channel mode power MOSFET using UTC’s

advanced technology to provide customers with planar stripe and DMOS

technology. This technology allows a minimum on-state resistance and

superior switching performance. It also can withstand high energy pulse in

the avalanche and commutation mode.

The UTC

15N40

is generally applied in high efficiency switch mode

power supplies.

TO-220

TO-220F1

FEATURES

* R

DS(ON)

=0.35Ω @ V

=10V,I

=7.5A

* Low Gate Charge (Typical 28nC)

* Low C

RSS

(Typical 17pF)

* High Switching Speed

SYMBOL

2.Drain

1.Gate

3.Source

ORDERING INFORMATION

Ordering Number

Package

Lead Free

Halogen Free

15N40L-TA3-T

15N40G-TA3-T

TO-220

15N40L-TF1-T

15N40G-TF1-T

TO-220F1

Note: Pin Assignment: G: Gate

D: Drain

S: Source

Pin Assignment

Packing

Tube

www.unisonic.com.tw

1 of 6

QW-R502-633.b

15N40_15 Related Products

	15N40_15	15N40G-TA3-T	15N40G-TF1-T	15N40L-TA3-T	15N40L-TF1-T
Description	N-CHANNEL POWER MOSFET	N-CHANNEL POWER MOSFET	N-CHANNEL POWER MOSFET	N-CHANNEL POWER MOSFET	N-CHANNEL POWER MOSFET
Is it Rohs certified?	-	conform to	conform to	conform to	conform to
Maker	-	UNISONIC TECHNOLOGIES CO.,LTD	UNISONIC TECHNOLOGIES CO.,LTD	UNISONIC TECHNOLOGIES CO.,LTD	UNISONIC TECHNOLOGIES CO.,LTD
Parts packaging code	-	TO-220AB	TO-220AB	TO-220AB	TO-220AB
package instruction	-	FLANGE MOUNT, R-PSFM-T3	FLANGE MOUNT, R-PSFM-T3	FLANGE MOUNT, R-PSFM-T3	FLANGE MOUNT, R-PSFM-T3
Contacts	-	3	3	3	3
Reach Compliance Code	-	compli	compli	compli	compli
Avalanche Energy Efficiency Rating (Eas)	-	731 mJ	731 mJ	731 mJ	731 mJ
Configuration	-	SINGLE WITH BUILT-IN DIODE	SINGLE WITH BUILT-IN DIODE	SINGLE WITH BUILT-IN DIODE	SINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage	-	400 V	400 V	400 V	400 V
Maximum drain current (ID)	-	15 A	15 A	15 A	15 A
Maximum drain-source on-resistance	-	0.3 Ω	0.3 Ω	0.3 Ω	0.3 Ω
FET technology	-	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR
JEDEC-95 code	-	TO-220AB	TO-220AB	TO-220AB	TO-220AB
JESD-30 code	-	R-PSFM-T3	R-PSFM-T3	R-PSFM-T3	R-PSFM-T3
Number of components	-	1	1	1	1
Number of terminals	-	3	3	3	3
Operating mode	-	ENHANCEMENT MODE	ENHANCEMENT MODE	ENHANCEMENT MODE	ENHANCEMENT MODE
Package body material	-	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY
Package shape	-	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR
Package form	-	FLANGE MOUNT	FLANGE MOUNT	FLANGE MOUNT	FLANGE MOUNT
Peak Reflow Temperature (Celsius)	-	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED
Polarity/channel type	-	N-CHANNEL	N-CHANNEL	N-CHANNEL	N-CHANNEL
Maximum pulsed drain current (IDM)	-	60 A	60 A	60 A	60 A
surface mount	-	NO	NO	NO	NO
Terminal form	-	THROUGH-HOLE	THROUGH-HOLE	THROUGH-HOLE	THROUGH-HOLE
Terminal location	-	SINGLE	SINGLE	SINGLE	SINGLE
Maximum time at peak reflow temperature	-	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED
transistor applications	-	SWITCHING	SWITCHING	SWITCHING	SWITCHING
Transistor component materials	-	SILICON	SILICON	SILICON	SILICON

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