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15N40L-TF1-T

Description
N-CHANNEL POWER MOSFET
CategoryDiscrete semiconductor    The transistor   
File Size214KB,6 Pages
ManufacturerUNISONIC TECHNOLOGIES CO.,LTD
Websitehttp://www.unisonic.com.tw/
Environmental Compliance
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15N40L-TF1-T Overview

N-CHANNEL POWER MOSFET

15N40L-TF1-T Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
MakerUNISONIC TECHNOLOGIES CO.,LTD
Parts packaging codeTO-220AB
package instructionFLANGE MOUNT, R-PSFM-T3
Contacts3
Reach Compliance Codecompli
Avalanche Energy Efficiency Rating (Eas)731 mJ
Shell connectionISOLATED
ConfigurationSINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage400 V
Maximum drain current (ID)15 A
Maximum drain-source on-resistance0.3 Ω
FET technologyMETAL-OXIDE SEMICONDUCTOR
JEDEC-95 codeTO-220AB
JESD-30 codeR-PSFM-T3
Number of components1
Number of terminals3
Operating modeENHANCEMENT MODE
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formFLANGE MOUNT
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Polarity/channel typeN-CHANNEL
Maximum pulsed drain current (IDM)60 A
surface mountNO
Terminal formTHROUGH-HOLE
Terminal locationSINGLE
Maximum time at peak reflow temperatureNOT SPECIFIED
transistor applicationsSWITCHING
Transistor component materialsSILICON
UNISONIC TECHNOLOGIES CO., LTD
15N40
Preliminary
Power MOSFET
15A, 400V N-CHANNEL
POWER MOSFET
1
DESCRIPTION
The UTC
15N40
is an N-channel mode power MOSFET using UTC’s
advanced technology to provide customers with planar stripe and DMOS
technology. This technology allows a minimum on-state resistance and
superior switching performance. It also can withstand high energy pulse in
the avalanche and commutation mode.
The UTC
15N40
is generally applied in high efficiency switch mode
power supplies.
TO-220
1
TO-220F1
FEATURES
* R
DS(ON)
=0.35Ω @ V
GS
=10V,I
D
=7.5A
* Low Gate Charge (Typical 28nC)
* Low C
RSS
(Typical 17pF)
* High Switching Speed
SYMBOL
2.Drain
1.Gate
3.Source
ORDERING INFORMATION
Ordering Number
Package
Lead Free
Halogen Free
15N40L-TA3-T
15N40G-TA3-T
TO-220
15N40L-TF1-T
15N40G-TF1-T
TO-220F1
Note: Pin Assignment: G: Gate
D: Drain
S: Source
Pin Assignment
1
2
3
G
D
S
G
D
S
Packing
Tube
Tube
www.unisonic.com.tw
Copyright © 2011 Unisonic Technologies Co., Ltd
1 of 6
QW-R502-633.b

15N40L-TF1-T Related Products

15N40L-TF1-T 15N40G-TA3-T 15N40G-TF1-T 15N40L-TA3-T 15N40_15
Description N-CHANNEL POWER MOSFET N-CHANNEL POWER MOSFET N-CHANNEL POWER MOSFET N-CHANNEL POWER MOSFET N-CHANNEL POWER MOSFET
Is it Rohs certified? conform to conform to conform to conform to -
Maker UNISONIC TECHNOLOGIES CO.,LTD UNISONIC TECHNOLOGIES CO.,LTD UNISONIC TECHNOLOGIES CO.,LTD UNISONIC TECHNOLOGIES CO.,LTD -
Parts packaging code TO-220AB TO-220AB TO-220AB TO-220AB -
package instruction FLANGE MOUNT, R-PSFM-T3 FLANGE MOUNT, R-PSFM-T3 FLANGE MOUNT, R-PSFM-T3 FLANGE MOUNT, R-PSFM-T3 -
Contacts 3 3 3 3 -
Reach Compliance Code compli compli compli compli -
Avalanche Energy Efficiency Rating (Eas) 731 mJ 731 mJ 731 mJ 731 mJ -
Configuration SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE -
Minimum drain-source breakdown voltage 400 V 400 V 400 V 400 V -
Maximum drain current (ID) 15 A 15 A 15 A 15 A -
Maximum drain-source on-resistance 0.3 Ω 0.3 Ω 0.3 Ω 0.3 Ω -
FET technology METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR -
JEDEC-95 code TO-220AB TO-220AB TO-220AB TO-220AB -
JESD-30 code R-PSFM-T3 R-PSFM-T3 R-PSFM-T3 R-PSFM-T3 -
Number of components 1 1 1 1 -
Number of terminals 3 3 3 3 -
Operating mode ENHANCEMENT MODE ENHANCEMENT MODE ENHANCEMENT MODE ENHANCEMENT MODE -
Package body material PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY -
Package shape RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR -
Package form FLANGE MOUNT FLANGE MOUNT FLANGE MOUNT FLANGE MOUNT -
Peak Reflow Temperature (Celsius) NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED -
Polarity/channel type N-CHANNEL N-CHANNEL N-CHANNEL N-CHANNEL -
Maximum pulsed drain current (IDM) 60 A 60 A 60 A 60 A -
surface mount NO NO NO NO -
Terminal form THROUGH-HOLE THROUGH-HOLE THROUGH-HOLE THROUGH-HOLE -
Terminal location SINGLE SINGLE SINGLE SINGLE -
Maximum time at peak reflow temperature NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED -
transistor applications SWITCHING SWITCHING SWITCHING SWITCHING -
Transistor component materials SILICON SILICON SILICON SILICON -

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