UNISONIC TECHNOLOGIES CO., LTD
15N40
Preliminary
Power MOSFET
15A, 400V N-CHANNEL
POWER MOSFET
1
DESCRIPTION
The UTC
15N40
is an N-channel mode power MOSFET using UTC’s
advanced technology to provide customers with planar stripe and DMOS
technology. This technology allows a minimum on-state resistance and
superior switching performance. It also can withstand high energy pulse in
the avalanche and commutation mode.
The UTC
15N40
is generally applied in high efficiency switch mode
power supplies.
TO-220
1
TO-220F1
FEATURES
* R
DS(ON)
=0.35Ω @ V
GS
=10V,I
D
=7.5A
* Low Gate Charge (Typical 28nC)
* Low C
RSS
(Typical 17pF)
* High Switching Speed
SYMBOL
2.Drain
1.Gate
3.Source
ORDERING INFORMATION
Ordering Number
Package
Lead Free
Halogen Free
15N40L-TA3-T
15N40G-TA3-T
TO-220
15N40L-TF1-T
15N40G-TF1-T
TO-220F1
Note: Pin Assignment: G: Gate
D: Drain
S: Source
Pin Assignment
1
2
3
G
D
S
G
D
S
Packing
Tube
Tube
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15N40
PARAMETER
Drain to Source Voltage
Gate-Source Voltage
Preliminary
SYMBOL
V
DSS
V
GSS
Power MOSFET
ABSOLUTE MAXIMUM RATINGS
(T
C
=25°C, unless otherwise specified.) (Note 5)
RATINGS
UNIT
400
V
±30
V
T
C
=25°C
15
A
I
D
Continuous
Drain Current
T
C
=100°C
9
A
Pulsed (Note 2)
I
DM
60
A
Avalanche Current (Note 2)
I
AR
15
A
Single Pulsed (Note 3)
E
AS
731
mJ
Avalanche Energy
Repetitive (Note 2)
E
AR
17
mJ
Peak Diode Recovery dv/dt (Note 4)
dv/dt
15
V/ns
Power Dissipation
(T
C
=25°C)
170
W
P
D
Derate above 25°C
1.45
W/°C
Junction Temperature
T
J
+150
°C
Storage Temperature
T
STG
-55~+150
°C
Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2. Repetitive Rating; Pulse width limited by maximum junction temperature.
3. L=6.5mH, I
AS
=15A. V
DD
=50V, R
G
=25Ω, Starting T
J
=25°C
4. I
SD
≤15A,
di/dt≤200A/µs, V
DD
≤BV
DSS
, Starting T
J
=25°C
5. Drain current limited by maximum junction temperature
THERMAL CHARACTERISTICS
PARAMETER
Junction to Ambient
Junction to Case
SYMBOL
θ
JA
θ
JC
RATINGS
62.5
0.7
UNIT
°C/W
°C/W
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15N40
PARAMETER
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
Drain-Source Leakage Current
Gate- Source Leakage Current
Forward
Reverse
Preliminary
Power MOSFET
ELECTRICAL CHARACTERISTICS
SYMBOL
BV
DSS
TEST CONDITIONS
I
D
=250µA, V
GS
=0V, T
J
=25°C
MIN TYP MAX UNIT
400
0.5
1
10
+100
-100
2.0
4.0
0.26 0.35
1310 1750
210 280
17
25
28
8
12
26
55
72
40
36
V
V/°C
µA
µA
nA
nA
V
Ω
pF
pF
pF
nC
nC
nC
ns
ns
ns
ns
A
A
V
ns
µC
∆BV
DSS
/∆T
J
Reference to 25°C, I
D
=250µA
I
DSS
I
GSS
V
DS
=400V, V
GS
=0V,
V
DS
=320V, T
C
=125°C
V
GS
=+30V, V
DS
=0V
V
GS
=-30V , V
DS
=0V
ON CHARACTERISTICS
Gate Threshold Voltage
V
GS(TH)
V
GS
=V
DS
, I
D
=250µA
Static Drain-Source On-State Resistance
R
DS(ON)
V
GS
=10V, I
D
=7.5A
DYNAMIC PARAMETERS
Input Capacitance
C
ISS
V
DS
=25V, V
GS
=0V, f=1.0MHz
Output Capacitance
C
OSS
Reverse Transfer Capacitance
C
RSS
SWITCHING PARAMETERS
Total Gate Charge
Q
G
V
DS
=320V, V
GS
=10V, I
D
=15A
Gate to Source Charge
Q
GS
(Note 1, 2)
Gate to Drain ("Miller") Charge
Q
GD
Turn-ON Delay Time
t
D(ON)
Rise Time
t
R
V
DD
=200V, I
D
=15A, R
G
=25Ω
(Note 1, 2)
Turn-OFF Delay Time
t
D(OFF)
Fall-Time
t
F
SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS
Maximum Body-Diode Continuous Current
I
S
Maximum Body-Diode Pulsed Current
I
SM
Drain-Source Diode Forward Voltage
V
SD
I
SD
=15A, V
GS
=0V
Body Diode Reverse Recovery Time
t
rr
I
SD
=15A, V
GS
=0V, dI
F
/dt=100A/µs
(Note 1)
Body Diode Reverse Recovery Charge
Q
RR
Notes: 1. Pulse Test: Pulse width≤300µs; Duty Cycle≤2%.
2. Essentially Independent of Operating Temperature Typical Characteristics
62
120
154
90
15
60
1.4
333
3.24
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3 of 6
QW-R502-633.b
15N40
Preliminary
Power MOSFET
TEST CIRCUITS AND WAVEFORMS
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QW-R502-633.b
15N40
Preliminary
Power MOSFET
TEST CIRCUITS AND WAVEFORMS(Cont.)
Peak Diode Recovery dv/dt Test Circuit & Waveforms
DUT
R
G
+
V
DS
L
-
I
SD
V
GS
V
DD
Driver
Same Type
as DUT
dv/dt controlled by R
G
I
SD
controlled by pulse period
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