AH115 / ECP050G
½ Watt, High Linearity InGaP HBT Amplifier
The Communications Edge
TM
Product Information
Product Features
•
1800 – 2300 MHz
•
+28.5 dBm P1dB
•
+44 dBm Output IP3
•
14 dB Gain @ 1960 MHz
•
+5V Single Positive Supply
•
MTTF > 100 Years
•
Lead-free/green/RoHS-compliant
SOIC-8 SMT Pkg.
Product Description
The AH115 / ECP050G is a high dynamic range driver
amplifier in a low-cost surface mount package. The
InGaP/GaAs HBT is able to achieve high performance for
various narrow-band tuned application circuits with up to
+44 dBm OIP3 and +28.5 dBm of compressed 1-dB power.
All devices are 100% RF and DC tested. The AH115 /
ECP050G is available in lead-free/green/RoHS-compliant
SOIC-8 package.
The product is targeted for use as driver amplifiers for
wireless infrastructure where high linearity and medium
power is required. The internal active bias allows the
AH115 / ECP050G to maintain high linearity over
temperature and operate directly off a +5 V supply. This
combination makes the device an excellent fit for
transceiver line cards and power amplifiers in current and
next generation multi-carrier 3G base stations.
Functional Diagram
1
8
2
7
3
6
4
5
Applications
•
Final stage amplifiers for Repeaters
•
Mobile Infrastructure
Function
Vref
Input
Output
Vbias
GND
N/C or GND
Pin No.
1
3
6, 7
8
Backside Paddle
2, 4, 5
Specifications
(1)
Parameters
Operational Bandwidth
Test Frequency
Gain
Input Return Loss
Output Return Loss
Output P1dB
Output IP3
(2)
IS-95A Channel Power
@ -45 dBc ACPR, 1960 MHz
Typical Performance
(4)
Min
1800
12.5
2140
14.4
23
8
+28.5
+42
+22.5
+20
200
5.3
250
+5
300
Units
MHz
MHz
dB
dB
dB
dBm
dBm
dBm
dBm
dB
mA
V
Typ
Max
2300
Parameters
Frequency
Gain
S11
S22
Output P1dB
Output IP3
(2)
IS-95A Channel Power
@ -45 dBc ACPR,
Units
MHz
dB
dB
dB
dBm
dBm
dBm
dBm
dB
Typical
1960
14.3
-12
-8
+28.3
+44
+22.5
+20
5
5.3
+5 V @ 250 mA
2140
14.4
-23
-8
+28.5
+42
+26.5
+41
wCDMA Channel Power
@ -45 dBc ACLR
wCDMA Channel Power
@ -45 dBc ACLR, 2140 MHz
Noise Figure
Operating Current Range
(3)
Device Voltage
Noise Figure
Supply Bias
4. Typical parameters reflect performance in a tuned application circuit at +25° C.
1. Test conditions unless otherwise noted. 25ºC, Vsupply = +5 V in tuned application circuit.
2. 3OIP measured with two tones at an output power of +11 dBm/tone separated by 1 MHz. The
suppression on the largest IM3 product is used to calculate the 3OIP using a 2:1 rule.
3. This corresponds to the quiescent current or operating current under small-signal conditions. It is
expected that the current can increase up to 300mA at P1dB.
Absolute Maximum Rating
Parameter
Operating Case Temperature
Storage Temperature
RF Input Power (continuous)
Device Voltage
Device Current
Device Power
Junction Temperature
-40 to +85
°C
-65 to +150
°C
+22 dBm
+8 V
400 mA
2W
+250
°C
Ordering Information
Part No.
AH115-S8*
ECP050G*
AH115-S8G
AH115-S8PCB1960
AH115-S8PCB2140
*
Rating
Description
½ Watt, High Linearity InGaP HBT Amplifier
(lead-tin SOIC-8 Pkg)
½ Watt, High Linearity InGaP HBT Amplifier
(lead-tin SOIC-8 Pkg)
½ Watt, High Linearity InGaP HBT Amplifier
(lead-free/green/RoHS-compliant SOIC-8 Pkg)
1960 MHz Evaluation Board
2140 MHz Evaluation Board
Operation of this device above any of these parameters may cause permanent damage.
This package is being phased out in favor of the green package type which is backward
compatible for existing designs.
Specifications and information are subject to change without notice
WJ Communications, Inc
•
Phone 1-800-WJ1-4401
•
FAX: 408-577-6621
•
e-mail: sales@wj.com
•
Web site: www.wj.com
Page 1 of 7
September 2005
AH115 / ECP050G
½ Watt, High Linearity InGaP HBT Amplifier
The Communications Edge
TM
Product Information
S-Parameters (V
cc
= +5 V, I
cc
= 250 mA, T = 25
°C
T = 25
°C,
calibrated to device leads)
1.0
Typical Device Data
S11
1.0
0.8
S22
6
0.
Gain and Maximum Stable Gain
6
0.
25
G ain (dB)
20
0.2
10.0
10.0
0.2
0.4
0.6
0.8
1.0
2.0
3.0
4.0
15
10
5
0
0
0.5
1
1.5
Frequency (GHz)
2
2.5
5.0
0
10.0
0.2
0.4
0.6
0.8
1.0
2.0
3.0
4.0
5.0
0
.
-0
4
.4
-0
.0
-2
-0
.6
-0
.6
-0.8
.0
-2
-0.8
Swp Min
0.05GHz
Notes:
The gain for the unmatched device in 50 ohm system is shown as the trace in black color. For a tuned circuit for a particular frequency,
it is expected that actual gain will be higher, up to the maximum stable gain. The maximum stable gain is shown in the dashed red line.
The return loss plots are shown from 50 – 5050 MHz, with markers placed at 0.5 – 5.05 GHz in 0.5 GHz increments.
S-Parameters (V
cc
= +5 V, I
cc
= 250 mA, T = 25
°C,
unmatched 50 ohm system, calibrated to device leads)
Freq (MHz)
S11 (dB)
S11 (ang)
S21 (dB)
S21 (ang)
S12 (dB)
S12 (ang)
S22 (dB)
S22 (ang)
50
100
200
400
600
800
1000
1200
1400
1600
1800
2000
2200
2400
2600
2800
3000
-2.11
-1.59
-1.51
-1.45
-1.58
-1.78
-1.96
-2.46
-3.30
-4.70
-8.15
-19.01
-9.59
-4.09
-1.99
-1.12
-0.72
-172.90
-178.94
173.71
163.84
153.68
144.31
134.21
123.44
111.21
92.57
78.58
93.29
177.56
159.30
141.65
127.57
116.11
25.10
21.15
17.75
15.23
13.69
12.77
11.94
11.36
11.17
11.39
11.64
11.51
10.35
7.87
4.95
1.97
-0.88
133.84
126.67
124.19
111.50
98.94
84.57
69.70
55.57
40.93
22.80
1.64
-25.24
-55.97
-83.78
-105.90
-122.86
-136.93
-1.0
-36.03
-35.22
-34.29
-34.45
-33.58
-32.84
-32.77
-31.79
-31.12
-30.30
-29.47
-29.31
-30.51
-32.59
-33.96
-34.68
-35.64
31.44
15.04
7.30
-2.16
-2.99
-12.80
-18.76
-30.73
-45.14
-61.92
-83.99
-112.79
-150.45
177.62
137.14
109.27
81.83
-2.06
-2.73
-2.80
-2.73
-1.96
-1.68
-1.85
-2.14
-2.30
-2.52
-2.43
-1.84
-1.22
-1.06
-1.07
-1.19
-1.44
-1.0
-105.55
-138.75
-160.44
-174.00
-179.13
172.00
166.98
164.05
163.07
164.84
164.25
162.38
155.68
147.58
139.74
132.15
125.05
Device S-parameters are available for download off of the website at: http://www.wj.com
Application Circuit PC Board Layout
Circuit Board Material: .014” Getek, 4 - layer, 1 oz copper, Microstrip line details: width = .026”, spacing = .026”
The silk screen markers ‘A’, ‘B’, ‘C’, etc. and ‘1’, ‘2’, ‘3’, etc. are used as placemarkers for the input and output tuning
shunt capacitors – C8 and C9. The markers and vias are spaced in .050” increments.
Specifications and information are subject to change without notice
WJ Communications, Inc
•
Phone 1-800-WJ1-4401
•
FAX: 408-577-6621
•
e-mail: sales@wj.com
•
Web site: www.wj.com
Page 2 of 7
October 2005
-4
.0
-5 .
0
-3
.0
-4
.0
-5.
0
2
-0.
2
-0 .
Swp Min
0.05GHz
-1 0. 0
0. 2
-10.0
-3
.0
0.
4
30
0
3.
0
4.
5.0
0.
4
DB(GMax)
DB(|S[2,1]|)
2.
0
2.
0
35
Swp Max
5.05GHz
Swp Max
5.05GHz
0. 8
0
3.
0
4.
5. 0
10 .0
AH115 / ECP050G
½ Watt, High Linearity InGaP HBT Amplifier
Typical RF Performance at 25
°C
Frequency
S21 – Gain
S11 – Input Return Loss
S22 – Output Return Loss
Output P1dB
Output IP3
(+11 dBm / tone, 1 MHz spacing)
The Communications Edge
TM
Product Information
1960 MHz Application Circuit (AH115-S8PCB1960)
1960 MHz
14.3 dB
-12 dB
-8 dB
+28.3 dBm
+44 dBm
+22.5 dBm
5 dB
+5 V
250 mA
Channel Power
(@-45 dBc ACPR, IS-95 9 channels fwd)
Noise Figure
Device / Supply Voltage
Quiescent Current
S21 vs. Frequency
16
14
S 2 1 (d B )
12
10
8
6
1930
+25°C
+85°C
-40°C
1940
1950
1960
1970
1980
1990
S 1 1 (d B )
0
-5
S11 vs. Freqency
0
-5
S 2 2 (d B )
-10
-15
-20
1960
1970
1980
1990
S22 vs. Frequency
-10
-15
-20
-25
1930
+25°C
85°C
-40°C
1940
1950
+25°C
+85°C
-40°C
1940
1950
1960
1970
1980
1990
-25
1930
Frequency (MHz)
Frequency (MHz)
Frequency (MHz)
Noise Figure vs. Frequency
7
6
P 1 d B (d B m )
5
N F (d B )
4
3
2
1
0
1930
+25°C
+85°C
-40°C
1940
1950
1960
1970
1980
1990
30
29
P1 dB vs. Frequency
-40
-45
A C P R (d B c )
-50
-55
-60
-65
-70
1940
1950
1960
1970
1980
1990
15
16
ACPR vs. Channel Power
IS-95, 9 ch,Fw d, ±885 KHz offset, 30 KHz Meas BW, 1960 MHz
28
27
26
25
24
1930
+25°C
+85°C
-40°C
+25°C
+85°C
-40°C
17
18
19
20
21
22
23
24
Frequency (MHz)
Frequency (MHz)
Output Channel Power (dBm)
OIP3 vs. Output Power
freq=1960, 1961 MHz,+ 25°C
OIP3 vs. Frequency
+25°C, +11 dBm / tone
OIP3 vs. Temperature
freq=1960,1961 MHz, +11 dBm / tone
46
44
O IP 3 (d B m )
O IP 3 (d Bm )
46
44
42
40
38
36
1930
46
44
O IP 3 (d B m )
1940
1950
1960
1970
1980
1990
42
40
38
36
8
10
12
14
16
Output Power (dBm)
18
20
42
40
38
36
-40
-15
10
35
60
85
Frequency (MHz)
Temperature (°C)
Specifications and information are subject to change without notice
WJ Communications, Inc
•
Phone 1-800-WJ1-4401
•
FAX: 408-577-6621
•
e-mail: sales@wj.com
•
Web site: www.wj.com
Page 3 of 7
October 2005
AH115 / ECP050G
½ Watt, High Linearity InGaP HBT Amplifier
Typical RF Performance at 25
°C
Frequency
S21 – Gain
S11 – Input Return Loss
S22 – Output Return Loss
Output P1dB
Output IP3
(+11 dBm / tone, 1 MHz spacing)
The Communications Edge
TM
Product Information
2140 MHz Application Circuit (AH115-S8PCB2140)
2140 MHz
14.4 dB
-23 dB
-8 dB
+28.5 dBm
+42 dBm
+20 dBm
5.3 dB
+5 V
250 mA
Channel Power
(@-45 dBc ACPR, IS-95 9 channels fwd)
Noise Figure
Device / Supply Voltage
Quiescent Current
S21 vs. Frequency
16
14
S11 vs. Frequency
0
-5
S 1 1 (d B )
-10
-15
-20
-25
2110
+25°C
+85°C
S 2 2 (d B )
0
-5
-10
-15
-20
-25
2110
S22 vs. Frequency
S 2 1 (d B )
12
10
8
6
2110
+25°C
+85°C
-40°C
-40°C
+25°C
+85°C
-40°C
2120
2130
2140
2150
2160
2170
2120
2130
2140
2150
2160
2170
2120
2130
2140
2150
2160
2170
Frequency (MHz)
Frequency (MHz)
Frequency (MHz)
Noise Figure vs. Frequency
8
7
6
A C P R (d B c )
-35
-40
-45
-50
-55
-60
-65
ACPR vs. Channel Power
3GPP W-CDMA Test Model 1+64 DPCH, ±5 MHz offset, 2140 MHz
P1 dB vs. Frequency
30
28
P 1 d B (d B m )
26
24
22
20
2110
+25°C
+85°C
-40°C
+25°C
+85°C
-40°C
N F (d B )
5
4
3
2
1
0
2110
2120
+ 25°C
+85°C
-40°C
2130
2140
2150
2160
2170
15
16
17
18
19
20
21
2120
2130
2140
2150
2160
2170
Frequency (MHz)
Output Channel Power (dBm)
Frequency (MHz)
OIP3 vs. Frequency
+25°C, +11 dBm / tone
OIP3 vs. Temperature
freq. = 2140, 2141, +11 dBm / tone
OIP3 vs. Output Power
freq. = 2140, 2141 MHz, 25°C
45
43
O IP 3 (d B m )
O IP 3 (d B m )
45
43
45
43
O IP 3 (d B m )
41
39
37
35
-40
-15
10
35
Temperature ( °C)
60
85
41
39
37
35
2110
41
39
37
35
2120
2130 2140 2150
Frequency (MHz)
2160
2170
6
8
10
12
14
16
18
20
Output Power (dBm)
Specifications and information are subject to change without notice
WJ Communications, Inc
•
Phone 1-800-WJ1-4401
•
FAX: 408-577-6621
•
e-mail: sales@wj.com
•
Web site: www.wj.com
Page 4 of 7
October 2005
AH115 / ECP050G
½ Watt, High Linearity InGaP HBT Amplifier
The Communications Edge
TM
Product Information
AH115-S8 (SOIC-8 Package) Mechanical Information
This package may contain lead-bearing materials. The plating material on the leads is SnPb.
Outline Drawing
Product Marking
The component will be marked with an
“AH115-S8” designator with an alphanumeric
lot code on the top surface of the package.
Tape and reel specifications for this part are
located on the website in the “Application
Notes” section.
ESD / MSL Information
ESD Rating:
Value:
Test:
Standard:
Class 1B
Passes 500V to <1000V
Human Body Model (HBM)
JEDEC Standard JESD22-A114
MSL Rating: Level 3 at +235° C convection reflow
Standard:
JEDEC Standard J-STD-020
Mounting Config. Notes
1. Ground / thermal vias are critical for the proper performance of
this device. Vias should use a .35mm (#80 / .0135”) diameter
drill and have a final plated thru diameter of .25 mm (.010”).
2. Add as much copper as possible to inner and outer layers near
the part to ensure optimal thermal performance.
3. Mounting screws can be added near the part to fasten the board
to a heatsink. Ensure that the ground / thermal via region
contacts the heatsink.
4. Do not put solder mask on the backside of the PC board in the
region where the board contacts the heatsink.
5. RF trace width depends upon the PC board
material and
construction.
6. Use 1 oz. Copper minimum.
7. All dimensions are in millimeters (inches). Angles are in
degrees.
Land Pattern
Thermal Specifications
Parameter
Operating Case Temperature
Thermal Resistance
(2)
, Rth
Junction Temperature
(3)
, Tjc
(1)
MTTF vs. GND Tab Temperature
100000
Rating
-40 to +85
°C
62
°C
/ W
162
°C
Notes:
1. The amplifier can be operated at 105
°C
case temperature for up to 1000
hours over its lifetime without degradation in performance and will not
degrade device operation at the recommended maximum 85
°C
case
temperature for the rest of its lifetime.
2. The thermal resistance is referenced from the junction-to-case at a case
temperature of 85
°C.
Tjc is a function of the voltage at pins 6 and 7 and the
current applied to pins 6, 7, and 8 and can be calculated by:
Tjc = Tcase + Rth * Vcc * Icc
3. This corresponds to the typical biasing condition of +5V, 250 mA at an 85
°C
case temperature. A minimum MTTF of 1 million hours is achieved for
junction temperatures below 247
°C.
M T T F (m illio n h r s )
10000
1000
100
60
70
80
90 100 110
Tab Temperature (°C)
120
Specifications and information are subject to change without notice
WJ Communications, Inc
•
Phone 1-800-WJ1-4401
•
FAX: 408-577-6621
•
e-mail: sales@wj.com
•
Web site: www.wj.com
Page 5 of 7
October 2005
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