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3N80G-TN3-R

Description
N-CHANNEL POWER MOSFET
CategoryDiscrete semiconductor    The transistor   
File Size268KB,8 Pages
ManufacturerUNISONIC TECHNOLOGIES CO.,LTD
Websitehttp://www.unisonic.com.tw/
Download Datasheet Parametric Compare View All

3N80G-TN3-R Overview

N-CHANNEL POWER MOSFET

3N80G-TN3-R Parametric

Parameter NameAttribute value
MakerUNISONIC TECHNOLOGIES CO.,LTD
package instructionSMALL OUTLINE, R-PSSO-G2
Reach Compliance Codecompli
Avalanche Energy Efficiency Rating (Eas)170 mJ
ConfigurationSINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage800 V
Maximum drain current (ID)3 A
Maximum drain-source on-resistance4.2 Ω
FET technologyMETAL-OXIDE SEMICONDUCTOR
JEDEC-95 codeTO-252
JESD-30 codeR-PSSO-G2
Number of components1
Number of terminals2
Operating modeENHANCEMENT MODE
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Polarity/channel typeN-CHANNEL
Maximum pulsed drain current (IDM)10 A
surface mountYES
Terminal formGULL WING
Terminal locationSINGLE
transistor applicationsSWITCHING
Transistor component materialsSILICON
UNISONIC TECHNOLOGIES CO., LTD
3N80
3 Amps, 800Volts
N-CHANNEL POWER MOSFET
DESCRIPTION
Power MOSFET
The UTC
3N80
provide excellent R
DS(ON)
, low gate charge and
operation with low gate voltages. This device is suitable for use as a
load switch or in PWM applications.
FEATURES
* R
DS(ON)
< 4.2Ω @V
GS
= 10 V
* Ultra Low Gate Charge ( typical 19 nC )
* Low Reverse Transfer Capacitance ( C
RSS
= Typical 11 pF )
* Fast Switching Capability
* Avalanche Energy Specified
* Improved dv/dt Capability, High Ruggedness
SYMBOL
ORDERING INFORMATION
Ordering Number
Lead Free
Halogen Free
3N80L-TA3-T
3N80G-TA3-T
3N80L-TF3-T
3N80G-TF3-T
3N80L-TF1-T
3N80G-TF1-T
3N80L-TF2-T
3N80G-TF2-T
3N80L-TM3-T
3N80G-TM3-T
3N80L-TN3-R
3N80G-TN3-R
Pin Assignment: G: Gate
D: Drain
S: Source
Package
TO-220
TO-220F
TO-220F1
TO-220F2
TO-251
TO-252
Pin Assignment
1
2
3
G
D
S
G
D
S
G
D
S
G
D
S
G
D
S
G
D
S
Packing
Tube
Tube
Tube
Tube
Tube
Tape Reel
Note:
www.unisonic.com.tw
Copyright © 2014 Unisonic Technologies Co., Ltd
1 of 8
QW-R502-283.I

3N80G-TN3-R Related Products

3N80G-TN3-R 3N80G-TF2-T 3N80G-TM3-T 3N80L-TF2-T 3N80L-TM3-T 3N80L-TN3-R 3N80_15
Description N-CHANNEL POWER MOSFET N-CHANNEL POWER MOSFET N-CHANNEL POWER MOSFET N-CHANNEL POWER MOSFET N-CHANNEL POWER MOSFET N-CHANNEL POWER MOSFET N-CHANNEL POWER MOSFET
Maker UNISONIC TECHNOLOGIES CO.,LTD UNISONIC TECHNOLOGIES CO.,LTD UNISONIC TECHNOLOGIES CO.,LTD UNISONIC TECHNOLOGIES CO.,LTD UNISONIC TECHNOLOGIES CO.,LTD UNISONIC TECHNOLOGIES CO.,LTD -
package instruction SMALL OUTLINE, R-PSSO-G2 TO-220F2, 3 PIN IN-LINE, R-PSIP-T3 TO-220F2, 3 PIN IN-LINE, R-PSIP-T3 SMALL OUTLINE, R-PSSO-G2 -
Reach Compliance Code compli compli compli compli compli compli -
Avalanche Energy Efficiency Rating (Eas) 170 mJ 170 mJ 170 mJ 170 mJ 170 mJ 170 mJ -
Configuration SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE -
Minimum drain-source breakdown voltage 800 V 800 V 800 V 800 V 800 V 800 V -
Maximum drain current (ID) 3 A 3 A 3 A 3 A 3 A 3 A -
Maximum drain-source on-resistance 4.2 Ω 4.2 Ω 4.2 Ω 4.2 Ω 4.2 Ω 4.2 Ω -
FET technology METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR -
JEDEC-95 code TO-252 TO-220AB TO-251 TO-220AB TO-251 TO-252 -
JESD-30 code R-PSSO-G2 R-PSFM-T3 R-PSIP-T3 R-PSFM-T3 R-PSIP-T3 R-PSSO-G2 -
Number of components 1 1 1 1 1 1 -
Number of terminals 2 3 3 3 3 2 -
Operating mode ENHANCEMENT MODE ENHANCEMENT MODE ENHANCEMENT MODE ENHANCEMENT MODE ENHANCEMENT MODE ENHANCEMENT MODE -
Package body material PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY -
Package shape RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR -
Package form SMALL OUTLINE FLANGE MOUNT IN-LINE FLANGE MOUNT IN-LINE SMALL OUTLINE -
Polarity/channel type N-CHANNEL N-CHANNEL N-CHANNEL N-CHANNEL N-CHANNEL N-CHANNEL -
Maximum pulsed drain current (IDM) 10 A 10 A 10 A 10 A 10 A 10 A -
surface mount YES NO NO NO NO YES -
Terminal form GULL WING THROUGH-HOLE THROUGH-HOLE THROUGH-HOLE THROUGH-HOLE GULL WING -
Terminal location SINGLE SINGLE SINGLE SINGLE SINGLE SINGLE -
transistor applications SWITCHING SWITCHING SWITCHING SWITCHING SWITCHING SWITCHING -
Transistor component materials SILICON SILICON SILICON SILICON SILICON SILICON -
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