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UT3413G-AE3-R

Description
P-CHANNEL ENHANCEMENT MODE
CategoryDiscrete semiconductor    The transistor   
File Size254KB,5 Pages
ManufacturerUNISONIC TECHNOLOGIES CO.,LTD
Websitehttp://www.unisonic.com.tw/
Environmental Compliance
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UT3413G-AE3-R Overview

P-CHANNEL ENHANCEMENT MODE

UT3413G-AE3-R Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
MakerUNISONIC TECHNOLOGIES CO.,LTD
package instructionSMALL OUTLINE, R-PDSO-G3
Contacts3
Reach Compliance Codecompli
ECCN codeEAR99
ConfigurationSINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage20 V
Maximum drain current (ID)3 A
Maximum drain-source on-resistance0.097 Ω
FET technologyMETAL-OXIDE SEMICONDUCTOR
JESD-30 codeR-PDSO-G3
Number of components1
Number of terminals3
Operating modeENHANCEMENT MODE
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Polarity/channel typeP-CHANNEL
Maximum pulsed drain current (IDM)15 A
surface mountYES
Terminal formGULL WING
Terminal locationDUAL
Maximum time at peak reflow temperatureNOT SPECIFIED
transistor applicationsSWITCHING
Transistor component materialsSILICON
UNISONIC TECHNOLOGIES CO., LTD
UT3413
P-CHANNEL ENHANCEMENT
MODE
DESCRIPTION
Power MOSFET
The UTC
UT3413
is P-channel enhancement mode Power
MOSFET, designed with high density cell, with fast switching speed,
low on-resistance, excellent thermal and electrical capabilities and
operation with low gate voltages.
This device is suitable for use as a load switch or in PWM
applications.
SYMBOL
3.Drain
2.Gate
1.Source
ORDERING INFORMATION
Ordering Number
UT3413G-AE2-R
UT3413G-AE3-R
Pin Assignment: G: Gate
D: Drain
Package
SOT-23-3
SOT-23
S: Source
Pin Assignment
1
2
3
S
G
D
S
G
D
Packing
Tape Reel
Tape Reel
Note:
MARKING
www.unisonic.com.tw
Copyright © 2015 Unisonic Technologies Co., Ltd
1 of 5
QW-R502-159.F

UT3413G-AE3-R Related Products

UT3413G-AE3-R UT3413_15 UT3413G-AE2-R
Description P-CHANNEL ENHANCEMENT MODE P-CHANNEL ENHANCEMENT MODE P-CHANNEL ENHANCEMENT MODE
Is it Rohs certified? conform to - conform to
Maker UNISONIC TECHNOLOGIES CO.,LTD - UNISONIC TECHNOLOGIES CO.,LTD
package instruction SMALL OUTLINE, R-PDSO-G3 - SMALL OUTLINE, R-PDSO-G3
Contacts 3 - 3
Reach Compliance Code compli - compli
ECCN code EAR99 - EAR99
Configuration SINGLE WITH BUILT-IN DIODE - SINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage 20 V - 20 V
Maximum drain current (ID) 3 A - 3 A
Maximum drain-source on-resistance 0.097 Ω - 0.097 Ω
FET technology METAL-OXIDE SEMICONDUCTOR - METAL-OXIDE SEMICONDUCTOR
JESD-30 code R-PDSO-G3 - R-PDSO-G3
Number of components 1 - 1
Number of terminals 3 - 3
Operating mode ENHANCEMENT MODE - ENHANCEMENT MODE
Package body material PLASTIC/EPOXY - PLASTIC/EPOXY
Package shape RECTANGULAR - RECTANGULAR
Package form SMALL OUTLINE - SMALL OUTLINE
Peak Reflow Temperature (Celsius) NOT SPECIFIED - NOT SPECIFIED
Polarity/channel type P-CHANNEL - P-CHANNEL
Maximum pulsed drain current (IDM) 15 A - 15 A
surface mount YES - YES
Terminal form GULL WING - GULL WING
Terminal location DUAL - DUAL
Maximum time at peak reflow temperature NOT SPECIFIED - NOT SPECIFIED
transistor applications SWITCHING - SWITCHING
Transistor component materials SILICON - SILICON
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