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UT3413_15

Description
P-CHANNEL ENHANCEMENT MODE
File Size254KB,5 Pages
ManufacturerUNISONIC TECHNOLOGIES CO.,LTD
Websitehttp://www.unisonic.com.tw/
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UT3413_15 Overview

P-CHANNEL ENHANCEMENT MODE

UNISONIC TECHNOLOGIES CO., LTD
UT3413
P-CHANNEL ENHANCEMENT
MODE
DESCRIPTION
Power MOSFET
The UTC
UT3413
is P-channel enhancement mode Power
MOSFET, designed with high density cell, with fast switching speed,
low on-resistance, excellent thermal and electrical capabilities and
operation with low gate voltages.
This device is suitable for use as a load switch or in PWM
applications.
SYMBOL
3.Drain
2.Gate
1.Source
ORDERING INFORMATION
Ordering Number
UT3413G-AE2-R
UT3413G-AE3-R
Pin Assignment: G: Gate
D: Drain
Package
SOT-23-3
SOT-23
S: Source
Pin Assignment
1
2
3
S
G
D
S
G
D
Packing
Tape Reel
Tape Reel
Note:
MARKING
www.unisonic.com.tw
Copyright © 2015 Unisonic Technologies Co., Ltd
1 of 5
QW-R502-159.F

UT3413_15 Related Products

UT3413_15 UT3413G-AE2-R UT3413G-AE3-R
Description P-CHANNEL ENHANCEMENT MODE P-CHANNEL ENHANCEMENT MODE P-CHANNEL ENHANCEMENT MODE
Is it Rohs certified? - conform to conform to
Maker - UNISONIC TECHNOLOGIES CO.,LTD UNISONIC TECHNOLOGIES CO.,LTD
package instruction - SMALL OUTLINE, R-PDSO-G3 SMALL OUTLINE, R-PDSO-G3
Contacts - 3 3
Reach Compliance Code - compli compli
ECCN code - EAR99 EAR99
Configuration - SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage - 20 V 20 V
Maximum drain current (ID) - 3 A 3 A
Maximum drain-source on-resistance - 0.097 Ω 0.097 Ω
FET technology - METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR
JESD-30 code - R-PDSO-G3 R-PDSO-G3
Number of components - 1 1
Number of terminals - 3 3
Operating mode - ENHANCEMENT MODE ENHANCEMENT MODE
Package body material - PLASTIC/EPOXY PLASTIC/EPOXY
Package shape - RECTANGULAR RECTANGULAR
Package form - SMALL OUTLINE SMALL OUTLINE
Peak Reflow Temperature (Celsius) - NOT SPECIFIED NOT SPECIFIED
Polarity/channel type - P-CHANNEL P-CHANNEL
Maximum pulsed drain current (IDM) - 15 A 15 A
surface mount - YES YES
Terminal form - GULL WING GULL WING
Terminal location - DUAL DUAL
Maximum time at peak reflow temperature - NOT SPECIFIED NOT SPECIFIED
transistor applications - SWITCHING SWITCHING
Transistor component materials - SILICON SILICON
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