BUK7909-75AIE
N-channel TrenchPLUS standard level FET
Rev. 02 — 17 February 2009
Product data sheet
1. Product profile
1.1 General description
Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic
package using TrenchMOS technology. The devices include TrenchPLUS current sensing
and diodes for ElectroStatic Discharge (ESD) protection. This product has been designed
and qualified to the appropriate AEC standard for use in automotive critical applications.
1.2 Features and benefits
Electrostatically robust due to
integrated protection diodes
Low conduction losses due to low
on-state resistance
Q101 compliant
Reduced component count due to
integrated current sensor
Suitable for standard level gate drive
sources
1.3 Applications
Electrical Power Assisted Steering
(EPAS)
Variable Valve Timing for engines
1.4 Quick reference data
Table 1.
V
DS
I
D
Quick reference
Conditions
V
GS
= 10 V; T
mb
= 25 °C;
see
Figure 2;
see
Figure 3
V
GS
= 10 V; I
D
= 50 A;
T
j
= 25 °C; see
Figure 7;
see
Figure 8
T
j
> -55 °C; T
j
< 175 °C;
V
GS
> 10 V
[1]
Min
-
-
Typ
-
-
Max
75
120
Unit
V
A
drain-source voltage T
j
≥
25 °C; T
j
≤
175 °C
drain current
Symbol Parameter
Static characteristics
R
DSon
drain-source
on-state resistance
ratio of drain current
to sense current
-
8
9
mΩ
I
D
/I
sense
450
500
550
[1]
Current is limited by power dissipation chip rating.
NXP Semiconductors
BUK7909-75AIE
N-channel TrenchPLUS standard level FET
2. Pinning information
Table 2.
Pin
1
2
3
4
5
mb
Pinning information
Symbol
G
ISENSE
D
KS
S
D
Description
gate
sense current
drain
Kelvin source
source
mounting base; connected to
drain
MBL368
Simplified outline
mb
Graphic symbol
d
g
Isense
s
Kelvin source
12 3 4 5
SOT263B
(TO-220)
3. Ordering information
Table 3.
Ordering information
Type number
Package
Name
Description
Version
BUK7909-75AIE
TO-220
plastic single-ended package; heatsink mounted; 1 mounting hole; 5-lead SOT263B
TO-220
BUK7909-75AIE_2
© NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 02 — 17 February 2009
2 of 13
NXP Semiconductors
BUK7909-75AIE
N-channel TrenchPLUS standard level FET
4. Limiting values
Table 4.
Symbol
V
DS
V
DGS
V
GS
I
D
Limiting values
Parameter
drain-source voltage
drain-gate voltage
gate-source voltage
drain current
T
mb
= 25 °C; V
GS
= 10 V; see
Figure 2;
see
Figure 3 [1]
[2]
T
mb
= 100 °C; V
GS
= 10 V; see
Figure 2
I
DM
P
tot
I
GS(CL)
T
stg
T
j
I
S
I
SM
E
DS(AL)S
peak drain current
total power dissipation
gate-source clamping
current
storage temperature
junction temperature
source current
peak source current
T
mb
= 25 °C
t
p
≤
10 µs; pulsed; T
mb
= 25 °C
[1]
[2]
Avalanche ruggedness
non-repetitive
I
D
= 75 A; V
sup
≤
75 V; R
GS
= 50
Ω;
V
GS
= 10 V;
drain-source avalanche T
j(init)
= 25 °C; unclamped
energy
electrostatic discharge
voltage
[1]
[2]
In accordance with the Absolute Maximum Rating System (IEC 60134).
Conditions
T
j
≥
25 °C; T
j
≤
175 °C
Min
-
-
-20
-
-
-
-
-
-
-
-55
-55
-
-
-
-
Max
75
75
20
120
75
75
480
272
10
50
175
175
120
75
480
739
Unit
V
V
V
A
A
A
A
W
mA
mA
°C
°C
A
A
A
mJ
[2]
T
mb
= 25 °C; t
p
≤
10 µs; pulsed; see
Figure 3
T
mb
= 25 °C; see
Figure 1
continuous
pulsed; t
p
= 5 ms;
δ
0.01
Source-drain diode
Electrostatic discharge
V
esd
HBM; C = 100 pF; R = 1.5 kΩ
-
6
kV
Current is limited by power dissipation chip rating.
Continuous current is limited by package.
BUK7909-75AIE_2
© NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 02 — 17 February 2009
3 of 13
NXP Semiconductors
BUK7909-75AIE
N-channel TrenchPLUS standard level FET
120
P
der
(%)
80
03na19
120
03ni95
ID
(A)
80
Capped at 75 A due to package
40
40
0
0
50
100
150
T
mb
(°C)
200
0
0
50
100
150
200
Tmb (°C)
Fig 2.
Fig 1.
Normalized total power dissipation as a
function of mounting base temperature
Continuous drain current as a function of
mounting base temperature
103
ID
(A)
03ni96
Limit RDSon = VDS/ID
tp = 10
μs
102
100
μs
Capped at 75 A due to package
DC
10
1 ms
10 ms
100 ms
1
1
10
102
VDS (V)
103
Fig 3.
Safe operating area; continuous and peak drain currents as a function of drain-source voltage
BUK7909-75AIE_2
© NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 02 — 17 February 2009
4 of 13
NXP Semiconductors
BUK7909-75AIE
N-channel TrenchPLUS standard level FET
5. Thermal characteristics
Table 5.
Symbol
R
th(j-a)
R
th(j-mb)
Thermal characteristics
Parameter
thermal resistance from
junction to ambient
Conditions
vertical in still air
Min
-
-
Typ
60
-
Max
-
0.55
Unit
K/W
K/W
thermal resistance from
see
Figure 4
junction to mounting base
1
Z
th(j-mb)
(K/W)
03ni64
δ
= 0.5
10-1
0.2
0.1
0.05
0.02
10-2
P
δ
=
tp
T
single shot
tp
T
t
10-3
10-6
10-5
10-4
10-3
10-2
10-1
1
tp (s)
10
Fig 4.
Transient thermal impedance from junction to mounting base as a function of pulse duration
BUK7909-75AIE_2
© NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 02 — 17 February 2009
5 of 13
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