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MJE13003G-R-X-T92-B

Description
NPN SILICON POWER TRANSISTOR
File Size369KB,8 Pages
ManufacturerUNISONIC TECHNOLOGIES CO.,LTD
Websitehttp://www.unisonic.com.tw/
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MJE13003G-R-X-T92-B Overview

NPN SILICON POWER TRANSISTOR

UNISONIC TECHNOLOGIES CO., LTD
MJE13003-R
NPN SILICON POWER
TRANSISTOR
DESCRIPTION
These devices are designed for high-voltage, high-speed
power switching inductive circuits where fall time is critical. They
are particularly suited for 115 and 220V applications in switch
mode.
NPN SILICON TRANSISTOR
FEATURES
* Reverse biased SOA with inductive load @ T
C
=100°C
* Inductive switching matrix 0.5 ~ 1.5 Amp, 25 and 100°C
Typical t
C
= 290ns @ 1A, 100°C.
* 700V blocking capability
APPLICATIONS
* Switching regulator’s, inverters
* Motor controls
* Solenoid/relay drivers
* Deflection circuits
ORDERING INFORMATION
Ordering Number
Halogen-Free
MJE13003G-R-x-T92-B
MJE13003G-R-x-T92-K
B: Base
C: Collector
Package
TO-92
TO-92
Pin Assignment
1
2
3
B
C
E
B
C
E
Packing
Tape Box
Bulk
Lead Free
MJE13003L-R-x-T92-B
MJE13003-L-R-x-T92-K
Note: Pin assignment: E: Emitter
MARKING
www.unisonic.com.tw
Copyright © 2014 Unisonic Technologies Co., Ltd
1 of 8
QW-R221-022.A

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