PRODUCT SUMMARY
SKY77824-11 SkyLiTE
™
Power Amplifier Module for FDD LTE
Bands 7 and 30, TDD LTE Bands 38/41 and 40, and
AXGP Band
Applications
•
Long-Term Evolution (LTE)
•
Evolved Universal Terrestrial
Radio Access Networks
(EUTRAN)
•
Handsets and Data Cards
Description
SkyLiTE
™
is Skyworks’ newest family of LTE devices which consists of highly integrated modules
incorporating the amplification, switching, WiFi filtering and coupler functions required to support
all major FDD/TDD bands. With the addition of external duplexers, this product family provides
OEMs with a scalable and reconfigurable front-end system suitable for markets worldwide.
SKY77824-11 SkyLiTE
™
Power Amplifier Module (PAM) is a fully matched, 28-pad surface mount
(SMT) module developed for LTE applications. The module includes broadband coverage of FDD
LTE Bands 7 and 30, TDD LTE Bands 38/40, and Band 41 in a compact 4.0 x 3.65 mm package
and is fully programmable through a Mobile Industry Processor Interface (MIPI
®
). Attaining high
efficiencies throughout the entire power range while meeting the stringent linearity requirements
of LTE, the SKY77824-11 delivers unsurpassed savings in current consumption for data-
intensive applications.
The Gallium Arsenide (GaAs) Microwave Monolithic Integrated Circuit (MMIC) contains all
amplifier active circuitry, including input, interstage, and output matching circuits. Output match
into a 50-ohm load is realized off-chip within the module package to optimize efficiency and
power performance. A Silicon-on-insulator (SOI) switch follows the wideband power amplifier to
direct the RF output signal to either a band 7 duplexer or one of three TDD filters supporting
bands 38, 40, and 41. Additional throws in the SOI switch allow the reuse of TDD filters in Rx
mode by providing paths to either the band 40 Rx port (T/R1) or a shared band 38/41/7 Rx port
(T/R2). Bias for the PA MMIC and switch is generated on a CMOS IC controlled through a MIPI
RFFE interface.
The SKY77824-11 SkyLiTE
™
is manufactured with Skyworks' InGaP GaAs Heterojunction Bipolar
Transistor (HBT) process which provides for all positive voltage DC supply operation and
maintains high efficiency and good linearity. Optimal performance is obtained with VCC1 and
VCC2 sourced from a DC-DC power supply based on target output power. No external supply side
switch is required as typical "off" leakage is a few microamperes.
Features
•
Optimized for Average Power
Tracking (APT)
•
High efficiency Broadband
2.3 GHz to 2.69 GHz
•
MIPI
®
RFFE interface
•
Integrated output switch
including TDD Tx/Rx function for
single SAW architecture
•
RF I/O internally matched to 50
ohms
•
Small, low profile package
- 4.0 x 3.65 x 0.8 mm Max.
- 28-pad configuration
Skyworks Solutions, Inc. • Phone [781] 376-3000 • Fax [781] 376-3100 • sales@skyworksinc.com • www.skyworksinc.com
203395C • Skyworks Proprietary Information. • Products and product information are subject to change without notice. • April 23, 2015
1
Ordering Information
Product Name
SKY77824-11 SkyLiTE
™
Power Amplifier Module
Order Number
SKY77824-11
Evaluation Board Part Number
TBD
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Customers are responsible for their products and applications using Skyworks products, which may deviate from published specifications as a result of design defects, errors, or operation of
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