UNISONIC TECHNOLOGIES CO., LTD
2SC4467
SILICON NPN TRIPLE
DIFFUSED PLANAR
TRANSISTOR
DESCRIPTION
NPN EPITAXIAL SILICON TRANSISTOR
The UTC
2SC4467
is a silicon NPN triple diffused planar
transistor, it uses UTC’s advanced technology to provide the
customers with high DC current gain and high collector-base
breakdown voltage, etc.
The UTC
2SC4467
is suitable for audio and general purpose,
etc.
FEATURES
* High DC current gain
* High collector-base breakdown voltage
ORDERING INFORMATION
Pin Assignment
1
2
3
B
C
E
B
C
E
Packing
Tube
Tube
Ordering Number
Package
Lead Free
Halogen Free
2SC4467L-x-T3P-T
2SC4467G-x-T3P-T
TO-3P
2SC4467L-x-T3N-T
2SC4467G-x-T3N-T
TO-3PN
Note: Pin Assignment: B: Base C: Collector E: Emitter
www.unisonic.com.tw
Copyright © 2013 Unisonic Technologies Co., Ltd
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2SC4467
NPN EPITAXIAL SILICON TRANSISTOR
ABSOLUTE MAXIMUM RATINGS
(T
A
=25°C)
PARAMETER
SYMBOL
RATINGS
UNIT
Collector-Base Voltage
V
CBO
160
V
Collector-Emitter Voltage
V
CEO
120
V
Emitter-Base Voltage
V
EBO
6
V
Collector Current
I
C
8
A
Base Current
I
B
3
A
Collector Power Dissipation (T
C
=25°C)
P
C
80
W
Junction Temperature
T
J
150
°C
Storage Temperature
T
STG
-55 ~150
°C
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
ELECTRICAL CHARACTERISTICS
(T
A
=25°C)
SYMBOL
I
CBO
I
EBO
BV
CEO
h
FE
V
CE(sat)
f
T
C
ob
t
ON
t
S
t
F
TEST CONDITIONS
V
CB
=160V
V
EB
=6V
I
C
=50mA
V
CE
=4V, I
C
=3A
I
C
=3A, I
B
=0.3A
V
CE
=12V, I
E
=-0.5A
V
CB
=10V, f=1MHz
V
CC
=40V, R
L
=10Ω, I
C
=4A,
I
B1
=0.4A I
B2
=0.4A
MIN TYP MAX UNIT
10
µA
10
µA
120
V
50
1.5
V
20
MHz
200
pF
0.13
µS
3.50
µS
0.32
µS
PARAMETER
Collector Cut-Off Current
Emitter Cut-Off Current
Collector-Emitter Breakdown Voltage
DC Current Gain
Collector-Emitter Saturation Voltage
Current Gain Bandwidth Product
Output Capacitance
Turn-on time
Switching time
Storage time
Fall time
CLASSIFICATION OF h
FE
RANK
RANGE
O
50~100
P
70~140
Y
90~180
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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QW-R214-018.B
2SC4467
TEST CIRCUIT
NPN EPITAXIAL SILICON TRANSISTOR
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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QW-R214-018.B
2SC4467
TYPICAL CHARACTERISTICS
NPN EPITAXIAL SILICON TRANSISTOR
Collector Current, I
C
(uA)
Collector Current, I
C
(mA)
60
50
40
30
20
10
0
0
Emitter Current vs.
Emitter-Base Voltage
6
Collector Current, I
C
(A)
5
4
3
2
1
Collector Current vs.
Collector-Emitter Voltage
I
B
=80mA
I
B
=60mA
I
B
=40mA
I
B
=200mA
I
B
=180mA
I
B
=20mA
I
B
=160mA
I
B
=140mA
I
B
=120mA
I
B
=100mA
Emitter Current, I
E
(uA)
12
16
4
8
Emitter-Base Voltage, V
EBO
(V)
20
0
0
1.5
2
2.5
3
1
0.5
Collector-Emitter Voltage, V
CE
(V)
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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QW-R214-018.B
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