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2SC4467G-O-T3P-T

Description
Power Bipolar Transistor
CategoryDiscrete semiconductor    The transistor   
File Size169KB,4 Pages
ManufacturerUNISONIC TECHNOLOGIES CO.,LTD
Websitehttp://www.unisonic.com.tw/
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2SC4467G-O-T3P-T Overview

Power Bipolar Transistor

2SC4467G-O-T3P-T Parametric

Parameter NameAttribute value
MakerUNISONIC TECHNOLOGIES CO.,LTD
package instructionFLANGE MOUNT, R-PSFM-T3
Reach Compliance Codeunknown
Maximum collector current (IC)8 A
Collector-emitter maximum voltage120 V
ConfigurationSINGLE
Minimum DC current gain (hFE)50
JESD-30 codeR-PSFM-T3
Number of components1
Number of terminals3
Maximum operating temperature150 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formFLANGE MOUNT
Polarity/channel typeNPN
surface mountNO
Terminal formTHROUGH-HOLE
Terminal locationSINGLE
transistor applicationsAMPLIFIER
Transistor component materialsSILICON
Nominal transition frequency (fT)20 MHz
Base Number Matches1
UNISONIC TECHNOLOGIES CO., LTD
2SC4467
SILICON NPN TRIPLE
DIFFUSED PLANAR
TRANSISTOR
DESCRIPTION
NPN EPITAXIAL SILICON TRANSISTOR
The UTC
2SC4467
is a silicon NPN triple diffused planar
transistor, it uses UTC’s advanced technology to provide the
customers with high DC current gain and high collector-base
breakdown voltage, etc.
The UTC
2SC4467
is suitable for audio and general purpose,
etc.
FEATURES
* High DC current gain
* High collector-base breakdown voltage
ORDERING INFORMATION
Pin Assignment
1
2
3
B
C
E
B
C
E
Packing
Tube
Tube
Ordering Number
Package
Lead Free
Halogen Free
2SC4467L-x-T3P-T
2SC4467G-x-T3P-T
TO-3P
2SC4467L-x-T3N-T
2SC4467G-x-T3N-T
TO-3PN
Note: Pin Assignment: B: Base C: Collector E: Emitter
www.unisonic.com.tw
Copyright © 2013 Unisonic Technologies Co., Ltd
1 of 4
QW-R214-018.B

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