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2SC2482_15

Description
NPN EPITAXIAL PLANAR TRANSISTOR
File Size115KB,3 Pages
ManufacturerUNISONIC TECHNOLOGIES CO.,LTD
Websitehttp://www.unisonic.com.tw/
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2SC2482_15 Overview

NPN EPITAXIAL PLANAR TRANSISTOR

UTC 2SC2482
NPN EPITAXIAL SILICON TRANSISTOR
NPN EPITAXIAL PLANAR
TRANSISTOR
APPLICATIONS
*HIGH VOLTAGE SWITCHING AND AMPLIFIER APPLICATIONS
*COLOR TV HORIZ. DRIVER APPLICATIONS
*COLOR TV CHROMA OUTPUT APPLICATIONS
1
FEATURES
*High Voltage :V(BR)CEO= 300V
*Small Collector Output Capacitance: Cob=3.0pF(Typ.)
TO-92NL
1:EMITTER
2:COLLECTOR
3:BASE
ABSOLUTE MAXIMUM RATINGS
( Ta=25°C )
PARAMETER
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Base Current
Collector Power Dissipation
Junction Temperature
Storage Temperature
SYMBOL
V
CBO
V
CEO
V
EBO
Ic
I
B
Pc
T
j
T
STG
LIMITS
300
300
7
100
50
900
150
-55 ~ +150
UNIT
V
V
V
mA
mA
mW
°C
°C
ELECTRICAL CHARACTERISTICS
(Ta=25°C, unless otherwise specified)
PARAMETER
Collector Cut-Off Current
Emitter Cut-Off Current
DC Current Gain
Collector-Emitter Saturation Voltage
Base- Emitter Saturation Voltage
Transition Frequency
Collector Output Capacitance
SYMBOL
I
CBO
I
EBO
h
FE(1)
h
FE(2)
V
CE
(sat)
V
BE
(sat)
f
T
Cob
TEST CONDITIONS
V
CB
=240V I
E
= 0
V
EB
= 7V Ic=0
V
CE
=10V,Ic=4mA
V
CE
=10V,Ic=20mA
Ic=10mA,I
B
=1mA
Ic=10mA,I
B
=1mA
V
CE
=10V, Ic=20mA
V
CB
=20V, I
E
= 0, f=1MHz
MIN
TYP
MAX
1.0
1.0
UNIT
μA
μA
20
30
150
1.0
1.0
3.0
50
V
V
MHz
pF
UTC
UNISONIC TECHNOLOGIES CO. LTD
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