UNISONIC TECHNOLOGIES CO., LTD
2SC5765
NPN EPITAXIAL SILICON TRANSISTOR
MEDIUM POWER AMPLIFIER
STROBO FLASH
DESCRIPTION
medium power amplifier applications
strobo flash applications
FEATURES
* Low Saturation Voltage: V
CE(sat)
= 0.27 V (max.),
(Ic = 3A / I
B
=60 mA)
ORDERING INFORMATION
Ordering Number
Lead Free
2SC5765L-T9S-K
Note: Pin Assignment: E: Emitter
Halogen Free
2SC5765G-T9S-K
B: Base C: Collector
Package
TO-92SP
Pin Assignment
1
2
3
E
C
B
Packing
Bulk
www.unisonic.com.tw
Copyright © 2013 Unisonic Technologies Co., Ltd
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ABSOLUTE MAXIMUM RATING
( T
A
=25°C)
PARAMETER
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
NPN EPITAXIAL SILICON TRANSISTOR
RATINGS
UNIT
15
V
10
V
7
V
DC
5
A
Collector Current
I
C
PLUSED
9
A
Collector Power Dissipation (Note 2)
P
C
550
mW
Junction Temperature
T
J
150
°C
Storage Temperature
T
STG
-55 ~ +150
°C
Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2. When a device is mounted on a glass epoxy board (35 mm*30 mm*1mm)
SYMBOL
V
CBO
V
CEO
V
EBO
ELECTRICAL CHARACTERISTICS
(T
A
=25°C, unless otherwise specified)
PARAMETER
Collector-Emitter Breakdown Voltage
Collector Cut-Off Current
Emitter Cut-Off Current
DC Current Gain (Note)
Collector-Emitter Saturation Voltage (Note)
Collector Output Capacitance
Note: Pulse test
SYMBOL
BV
CEO
I
CBO
I
EBO
h
FE 1
h
FE2
h
FE3
V
CE(SAT)
C
ob
TEST CONDITIONS
I
C
=1mA, I
B
= 0
V
CB
=15V, I
E
= 0
V
EB
= 5V, Ic=0
V
CE
=1.5V, Ic=0.5A
V
CE
=1.5V, Ic=2A
V
CE
=1.5V, Ic=5A
Ic=3A, I
B
=60mA
V
CB
=10V, I
E
= 0, f=1MHz
MIN TYP MAX UNIT
10
V
0.1
μA
0.1
μA
450
700
320
170
0.27 V
25
pF
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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TYPICAL CHARACTERISTICS
NPN EPITAXIAL SILICON TRANSISTOR
DC Current Gain, h
FE
Collector Current, I
C
(A)
Collector Emitter Saturation
Voltage, V
CE(sat)
(V)
Collector Current, I
C
(A)
100
Collector Current, I
C
(A)
Safe Operating Area
when a device is mounted
on a Glass epoxy board
(35mm*30mm*1mm)
600
Collector Power Dissipation vs.
Ambient Temperature
10
1ms*
t=
10
s*
0m
Collector Power
Dissipation, Pc (mW)
Ic max(Pulsed)
Ic max
(Continous)
400
1
DC
Operation
200
0.1
*Single nonrepetitive pulse
T
A
= 25°C
Curves must be derated linearly
with increase in temperature
0.01
0.01
V
CEO
max
0
100
0.1
1
10
Collector Emitter Voltage, V
CE
(V)
0
150
100
Ambient Temperature, T
A
(°C)
50
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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TYPICAL CHARACTERISTICS
NPN EPITAXIAL SILICON TRANSISTOR
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
Transient thermal
impedance, r
th
(°C/W)
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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