UNISONIC TECHNOLOGIES CO., LTD
2SD313
NPN EPITAXIAL PLANAR
TRANSISTOR
DESCRIPTION
NPN SILICON TRANSISTOR
The UTC
2SD313
is designed for use in general purpose
amplifier and switching applications.
ORDERING INFORMATION
Ordering Number
Halogen Free
2SD313G-x-TA3-T
2SD313G-x-TF3-T
2SD313G-x-TQ2-T
2SD313G-x-TQ2-R
B: Base
C: Collector
Package
TO-220
TO-220F
TO-263
TO-263
Pin Assignment
1
2
3
B
C
E
B
C
E
B
C
E
B
C
E
Packing
Tube
Tube
Tube
Tape Reel
Lead Free
2SD313L-x-TA3-T
2SD313L-x-TF3-T
2SD313L-x-TQ2-T
2SD313L-x-TQ2-R
Note: Pin assignment: E: Emitter
MARKING
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QW-R203-001.F
2SD313
PARAMETER
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
SYMBOL
V
CBO
V
CEO
V
EBO
I
C
NPN SILICON TRANSISTOR
ABSOLUTE MAXIMUM RATINGS
(T
A
=25C, unless otherwise specified)
RATINGS
UNIT
60
V
60
V
5
V
3
A
TO-220
1.75
Collector Dissipation
TO-220F
P
C
1.6
W
TO-263
1.73
Junction Temperature
T
J
+150
C
Storage Temperature
T
STG
-55 ~ +150
C
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
ELECTRICAL CHARACTERISTICS
(T
A
=25C, unless otherwise specified)
SYMBOL
BV
CBO
BV
CEO
BV
EBO
I
CBO
I
EBO
h
FE
V
CE(SAT)
V
BE(ON)
f
T
TEST CONDITIONS
I
C
=1mA
I
C
=10mA
I
E
=100uA
V
CB
=20V, I
E
=0
V
EB
=4V, I
C
=0
I
C
=1A, V
CE
=2V
I
C
=0.1A,V
CE
=2V
I
C
=2A, I
B
=0.2A
V
CE
=2V, I
C
=1A
V
CE
= 5V, I
C
= 0.5A
MIN
60
60
5
TYP
MAX
UNIT
V
V
V
mA
mA
PARAMETER
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cut-Off Current
Emitter Cut-Off Current
DC Current Gain
Collector-Emitter Saturation Voltage
Base-Emitter On voltage
Gain Band width Product
40
40
0.1
1.0
320
1.0
1.5
8
V
V
MHz
CLASSIFICATION ON h
FE
RANK
RANGE
C
40-80
D
60-120
E
100-200
F
160-320
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www.unisonic.com.tw
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QW-R203-001.F
2SD313
TYPICAL CHARACTERISTICS
NPN SILICON TRANSISTOR
V
BE(SAT)
vs. I
C
10000
I
C
=10I
B
Collector Current (A)
10
Saturation Voltage, V
CE(SAT)
(mV)
h
FE
SOA
V
BE(SAT)
(mA)
20mS
1
dc
1000
100
10
100
1000
10000
Collector Current (mA)
0.1
1
10
Collector to Emitter Voltage (V)
100
V
BE(ON)
(mV)
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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QW-R203-001.F
2SD313
NPN SILICON TRANSISTOR
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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QW-R203-001.F
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