Fairchild’s advanced low voltage PowerTrench process.
It has been optimized for battery power management
applications.
Features
•
–0.6 A, –20 V.
R
DS(ON)
= 0.40
Ω
@ V
GS
= –4.5 V
R
DS(ON)
= 0.55
Ω
@ V
GS
= –2.5 V
R
DS(ON)
= 0.80
Ω
@ V
GS
= –1.8 V
Applications
•
Battery management
•
Load switch
•
Low gate charge
•
High performance trench technology for extremely
low R
DS(ON)
•
Compact industry standard SC70-6 surface mount
package
S
G
D
D
G
Pin 1
S
1 or 4
6 or 3
D
5 or 2
G
4 or 1
S
G
2 or 5
S
D
3 or 6
SC70-6
The pinouts are symmetrical; pin 1 and pin 4 are interchangeable.
Absolute Maximum Ratings
Symbol
V
DSS
V
GSS
I
D
P
D
T
J
, T
STG
Drain-Source Voltage
Gate-Source Voltage
Drain Current
– Continuous
– Pulsed
T
A
=25
o
C unless otherwise noted
Parameter
Ratings
–20
±
8
(Note 1)
Units
V
V
A
W
°C
–0.6
–1.8
0.3
–55 to +150
Power Dissipation for Single Operation
(Note 1)
Operating and Storage Junction Temperature Range
Thermal Characteristics
R
θJA
Thermal Resistance, Junction-to-Ambient
(Note 1)
415
°C/W
Package Marking and Ordering Information
Device Marking
.08
Device
FDG6308P
Reel Size
7’’
Tape width
8mm
Quantity
3000 units
2000
Fairchild Semiconductor Corporation
FDG6308P Rev B(W)
FDG6308P
Electrical Characteristics
Symbol
BV
DSS
∆BV
DSS
===∆T
J
I
DSS
I
GSSF
I
GSSR
T
A
= 25°C unless otherwise noted
Parameter
Test Conditions
Min
–20
Typ
Max Units
V
Off Characteristics
Drain–Source Breakdown
I
D
= –250
µA
V
GS
= 0 V,
Voltage
Breakdown Voltage Temperature I
D
= –250
µA,
Referenced to 25°C
Coefficient
Zero Gate Voltage Drain Current V
DS
= –16 V, V
GS
= 0 V
Gate–Body Leakage, Forward
Gate–Body Leakage, Reverse
(Note 2)
–15
–1
–100
100
mV/°C
µA
nA
nA
V
GS
= –8 V,
V
GS
= 8 V,
V
DS
= 0 V
V
DS
= 0 V
I
D
= –250
µA
On Characteristics
V
GS(th)
∆V
GS(th)
===∆T
J
R
DS(on)
Gate Threshold Voltage
Gate Threshold Voltage
Temperature Coefficient
Static Drain–Source
On–Resistance
V
DS
= V
GS
,
–0.4
–0.9
2
0.27
0.36
0.55
0.35
–1.5
V
mV/°C
I
D
= –250
µA,
Referenced to 25°C
V
GS
= –4.5 V,
V
GS
= –2.5 V,
V
GS
= –1.8 V,
V
GS
= –4.5 V,
V
GS
= –4.5 V,
V
DS
= –5 V,
I
D
= –0.6 A
I
D
= –0.5 A
I
D
= –0.4 A
I
D
= –0.6 A, T
J
=125°C
V
DS
= –5 V
I
D
= –0.6 A
0.40
0.55
0.80
0.56
Ω
I
D(on)
g
FS
On–State Drain Current
Forward Transconductance
–2
2.1
A
S
Dynamic Characteristics
C
iss
C
oss
C
rss
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
(Note 2)
V
DS
= –10 V, V
GS
= 0 V,
f = 1.0 MHz
153
25
9
pF
pF
pF
Switching Characteristics
t
d(on)
t
r
t
d(off)
t
f
Q
g
Q
gs
Q
gd
I
S
V
SD
Turn–On Delay Time
Turn–On Rise Time
Turn–Off Delay Time
Turn–Off Fall Time
Total Gate Charge
Gate–Source Charge
Gate–Drain Charge
V
DD
= –10 V, I
D
= 1 A,
V
GS
= –4.5 V, R
GEN
= 6
Ω
5
15
7
1.6
10
27
14
3.2
2.5
ns
ns
ns
ns
nC
nC
nC
V
DS
= –10 V, I
D
= –0.6 A,
V
GS
= –4.5 V
1.8
0.3
0.4
Drain–Source Diode Characteristics and Maximum Ratings
Maximum Continuous Drain–Source Diode Forward Current
Drain–Source Diode Forward
Voltage
V
GS
= 0 V,
I
S
= –0.25 A
(Note 2)
–0.77
–0.25
–1.2
A
V
Notes:
1.
R
θJA
is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of
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