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CBA_15

Description
Thin Film Binary MOS Capacitors
File Size78KB,3 Pages
ManufacturerVishay
Websitehttp://www.vishay.com
Download Datasheet View All

CBA_15 Overview

Thin Film Binary MOS Capacitors

CBA
www.vishay.com
Vishay Electro-Films
Thin Film Binary MOS Capacitors
FEATURES
• Wire bondable
• User value selection
• Four capacitors with common connection
• Capacitance range: 0.25 pF to 15 pF in binary
increments
Product may not be to scale
• Dielectric: Silicon dioxide
• Chip size: 0.019" x 0.030"
• Substrate: Silicon with gold backing
• Material categorization: For definitions of compliance
please see
www.vishay.com/doc?99912
The CBA MOS capacitor chips each contain four different
capacitors in binary increments allowing the user many
choices in value selection. Two versions of CBA capacitors
are available: one with a total capacitance of 3.75 pF and
one with a total capacitance of 15 pF.
These chips are manufactured using Vishay Electro-Films
(EFI) sophisticated Thin Film equipment and manufacturing
technology. The CBAs are 100 % electrically tested and
visually inspected to MIL-STD-883.
APPLICATIONS
Vishay EFI CBA binary MOS multi-value capacitor chips are
designed for hybrid packages in which microwave circuits
are to be trimmed. This is done on the CBA chips by
selecting the bonding pad for the required capacitance and
wire-bonding by conventional techniques.
WV (DC) VALUES AND TOLERANCES
CAPACITOR MODEL
Case Size
Total Capacitance
Capacitance Values
Tolerance
DC Working Voltage
CBA 3.75 pF
0203
3.75
0.25, 0.50, 1.0, 2.0
± 25
100
CBA 15 pF
0203
15
1.0, 2.0, 4.0, 8.0
± 10
30
pF
pF
%
V
UNIT
STANDARD ELECTRICAL SPECIFICATIONS
PARAMETER
Capacitance Range
Maximum Working Voltage
Peak Voltage at + 25 °C
Dissipation Factor, 1 kHz, 1 V
RMS
, + 25 °C
Q at 1 mHz, 50 mV
RMS
, + 25 °C
TCC, - 55 °C to + 150 °C
Insulation Resistance at Working Voltage, + 25 °C
Operating Temperature Range
Thermal Shock
Moisture Resistance, MIL-STD-202, Method 106
Short Time Overload, + 25 °C, 5 s; 1.5 x Working Voltage
High Temperature Exposure: 100 h at + 150 °C Ambient
Life, MIL-STD-202, Method 108,
Condition D, + 125 °C Ambient, 1000 h at Working Voltage
VALUE
0.25 to 15
100
1.5 x working voltage
0.1 max. MOS
1000 min.
+ 15 ± 25
10
9
min.
- 55 to + 150
± 0.25 + 0.25 pF max.
C/C
± 1.0 + 0.25 pF max.
C/C
± 0.25 + 0.25 pF max.
C/C
± 0.25 + 0.25 pF max.
± 2.0 + 0.25 pF max.
C/C
ppm/°C
°C
%
%
%
%
%
%
UNIT
pF
V
Revision: 02-May-13
Document Number: 61041
1
For technical questions, contact:
efi@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000

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