JMnic
Product Specification
Silicon NPN Power Transistors
2SC1875
DESCRIPTION
・With
TO-3 package
・High
voltage ,high speed
APPLICATIONS
・Designed
for use in large screen color
deflection circuits
PINNING(see Fig.2)
PIN
1
2
3
Base
Emitter
Collector
Fig.1 simplified outline (TO-3) and symbol
DESCRIPTION
Absolute maximum ratings(Ta=
℃)
SYMBOL
V
CBO
V
CEO
V
EBO
I
C
I
CM
I
B
P
C
T
j
T
stg
PARAMETER
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector current-peak
Base current
Collector power dissipation
Junction temperature
Storage temperature
T
C
=25℃
CONDITIONS
Open emitter
Open base
Open collector
VALUE
1500
500
6
3.5
10
1.0
50
150
-65~150
UNIT
V
V
V
A
A
A
W
℃
℃
THERMAL CHARACTERISTICS
SYMBOL
R
th j-C
PARAMETER
Thermal resistance junction case
MAX
2.5
UNIT
℃/W
JMnic
Product Specification
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN
2SC1875
TYP.
MAX
UNIT
V
CEO(SUS)
Collector-emitter sustaining voltage
I
C
=100mA ;I
B
=0
500
V
V
CEsat
V
BEsat
Collector-emitter saturation voltage
I
C
=2.5A; I
B
=0.6A
I
C
=2.5A; I
B
=0.6A
10
V
Base-emitter saturation voltage
1.2
V
I
CES
Collector cut-off current
V
CE
=1500V; V
BE
=0
1.0
mA
μA
μA
I
CBO
Collector cut-off current
V
CB
=1000V; I
E
=0
20
I
EBO
Emitter cut-off current
V
EB
=5V; I
C
=0
20
h
FE-1
DC current gain
I
C
=0.5A ; V
CE
=10V
10
35
h
FE-2
t
s
DC current gain
I
C
=2A ; V
CE
=10V
5
25
μs
μs
Storage time
I
C
=2.5A ; I
B1
=-I
B2
=0.6A
Pw=20μs
10
t
f
Fall time
1.0
2
JMnic
Product Specification
Silicon NPN Power Transistors
PACKAGE OUTLINE
2SC1875
Fig.2 outline dimensions (unindicated tolerance:±0.1mm)
3
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